AI 中文总结
本研究提出Ta₂O₅/TaOX阻变存储单元，通过非晶氧化钽的成分相分离，突破阻变存储器保持性能与开关均匀性的权衡，实现非丝型开关及190℃下超22小时的长保持性能。
AI 中文摘要
阻变随机存取存储器（ReRAM）是一种极具潜力的未来非易失性存储器技术。大多数ReRAM存在一个固有权衡：丝型ReRAM具备长数据保持能力，但存在均匀性差、开关电流高的问题；而非丝型ReRAM的开关电流更低、开关特性依赖于器件面积，不过通常保持性能较差。目前尚无两端口器件能突破这一权衡。本研究提出一种两端口Ta₂O₅/TaOX阻变存储单元，同时实现非丝型开关与长数据保持。电学测试与成分深度剖析显示，开关过程并非局限于单一丝状结构，而是在整个开关区域均匀发生。尽管采用非丝型开关，该器件在190℃下的信息保持时间超过22小时，与性能最优的丝型器件相当。我们认为这种长保持性能源于非晶氧化钽中的成分相分离。本研究表明，信息保持与开关均匀性之间的固有权衡可被突破，为制备更均匀、更可靠的氧化物存储器件提供了途径。
英文摘要
Resistive random-access memory (ReRAM) is a promising future nonvolatile memory technology. Most ReRAM exhibit a fundamental tradeoff: filament-type ReRAM provides long data retention but suffers from poor uniformity and high switching current, whereas nonfilamentary ReRAM shows lower-current, area-dependent switching but generally poor retention. No two-terminal device has been able to overcome this tradeoff. In this work, we present a two-terminal Ta2O5/ TaOX resistive memory cell that achieves both nonfilamentary switching and long retention. Electrical measurements and composition depth profile show that the switching is not confined to a single filament but is instead uniform across the entire switching region. Despite the nonfilamentary switching, this device can retain information for over 22 hours at 190 °C, which is comparable to the best filamentary devices. We propose that this long retention arises from composition phase separation in amorphous tantalum oxide. Our work shows that the fundamental tradeoff between information retention and switching uniformity can be overcome, and thereby provides a pathway toward more uniform and reliable oxide memory devices.
Comments22 pages, 4 figures
