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arXiv 2010.02461cond-mat.mes-hallcond-mat.othercond-mat.str-el
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ZnO-based电子系统中自旋轨道耦合与库仑相互作用的相互作用

Interplay of spin-orbit coupling and Coulomb interaction in ZnO-based electron system

D. Maryenko, M. Kawamura, A. Ernst, V. K. Dugaev, E. Ya. Sherman, M. Kriener, M. S. Bahramy, Y. Kozuka, M. Kawasaki

摘要:

自旋轨道耦合(SOC)是固体中各种基本自旋相关现象及其技术应用的关键。在半导体中,这些现象迄今为止一直在相对较弱的电子-电子相互作用机制中进行研究,其中单电子图像成立。然而,SOC可以深刻地对抗库仑相互作用,这可能导致非常规电子相的出现。由于SOC取决于晶体中的电场,包括巡回电子的贡献,电子-电子相互作用可以修改这种耦合。在这里,我们证明了SOC效应的出现在一个简单的能带结构MgZnO/ZnO半导体的高迁移率的二维电子系统。该电子系统还具有强的电子-电子相互作用效应。通过改变载流子密度与镁含量,我们调整SOC的强度,并实现其与电子-电子相互作用的相互作用。这些系统为在强电子关联区出现自旋电子现象和形成电子自旋与密度强耦合的新型准粒子铺平了道路。

英文摘要:

Spin-orbit coupling (SOC) is pivotal for various fundamental spin-dependent phenomena in solids and their technological applications. In semiconductors, these phenomena have been so far studied in relatively weak electron-electron interaction regimes, where the single electron picture holds. However, SOC can profoundly compete against Coulomb interaction, which could lead to the emergence of unconventional electronic phases. Since SOC depends on the electric field in the crystal including contributions of itinerant electrons, electron-electron interactions can modify this coupling. Here we demonstrate the emergence of SOC effect in a high-mobility two-dimensional electron system in a simple band structure MgZnO/ZnO semiconductor. This electron system features also strong electron-electron interaction effects. By changing the carrier density with Mg-content, we tune the SOC strength and achieve its interplay with electron-electron interaction. These systems pave a way to emergent spintronic phenomena in strong electron correlation regime and to the formation of novel quasiparticles with the electron spin strongly coupled to the density.

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