人工原子在ZnO界面上相互作用驱动的独特电子态
Interaction-Driven Distinctive Electronic States of Artificial Atoms at the ZnO Interface
摘要：
研究了在外加磁场中，ZnO界面上含有少量相互作用电子的平面量子点的电子态。在这些系统中，电子-电子相互作用效应预计将比传统的半导体量子系统（如GaAs或InAs量子点）强得多。为了突出ZnO量子点中更强的库仑效应，我们将该系统中的能谱和磁化强度与InAs量子点进行了比较。我们已经发现，在ZnO量子点，更强的库仑相互作用的签名表现在一个独特的基态，具有非常不同的属性比相应的InAs点。我们对磁化强度的研究结果也表现出了以前从未在量子点中观察到的行为：我们发现了更强的温度依赖性和其他意想不到的特征，例如量子点氦在高温下的顺磁性行为。
英文摘要：
We have investigated the electronic states of planar quantum dots at the ZnO interface containing a few interacting electrons in an externally applied magnetic field. In these systems, the electron-electron interaction effects are expected to be much stronger than in traditional semiconductor quantum systems, such as in GaAs or InAs quantum dots. In order to highlight that stronger Coulomb effects in the ZnO quantum dots, we have compared the energy spectra and the magnetization in this system to those of the InAs quantum dots. We have found that in the ZnO quantum dots, the signatures of stronger Coulomb interaction manifests in an unique ground state that has very different properties than the corresponding ones in the InAs dot. Our results for the magnetization also exhibits behaviors never before observed in a quantum dot: We have found a stronger temperature dependence and other unexpected features, such as paramagnetic-like behavior at high temperatures for a quantum-dot helium.
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