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arXiv 1403.7617cond-mat.mes-hallcond-mat.str-el
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铁电性与单电子隧穿的相互作用

Interplay of ferroelectricity and single electron tunneling

S. A. Fedorov, A. E. Korolkov, N. M. Chtchelkatchev, O. G. Udalov, I. S. Beloborodov

摘要:

我们研究了纳米尺度下库仑阻塞体系中铁电性和量子电子输运的相互作用。在这种情况下,铁电极化不再是外部参数,但应自洽计算电子跳跃概率导致新的物理输运现象,在本文中研究。这些现象的出现主要是由于铁电环境对晶粒电场的有效屏蔽,而不是由于极化相关的隧穿概率。在小的偏置电压下,可以通过晶粒中的单个过剩电子来切换极化。在这种情况下,SET的输运性质表现出不稳定性(记忆效应)。

英文摘要:

We investigate the interplay of ferroelectricity and quantum electron transport at the nanoscale in the regime of Coulomb blockade. Ferroelectric polarization in this case is no longer the external parameter but should be self-consistently calculated along with electron hopping probabilities leading to new physical transport phenomena studying in this paper. These phenomena appear mostly due to effective screening of a grain electric field by ferroelectric environment rather than due to polarization dependent tunneling probabilities. At small bias voltages polarization can be switched by a single excess electron in the grain. In this case transport properties of SET exhibit the instability (memory effect).

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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