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arXiv 2603.28482cond-mat.mes-hall
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滑动铁电隧道结中的共振增强隧道电电阻

Resonant-enhanced tunneling electroresistance in sliding ferroelectric tunnel junctions

University of Electronic Science and Technology of China(电子科技大学);Fudan University(复旦大学);East China Normal University(华东师范大学)

Ruixue Wang, Jiangang Chen, Er Pan, Wunan Wang, Zefen Li, Fan Yang, Hongmiao Zhou, Zhaoren Xie, Qing Liu, Xiao Luo, Junhao Chu, Wenwu Li, Fucai Liu

AI总结:

本文通过引入动量守恒的共振隧穿,实现了滑动铁电隧道结的高电电阻比,展示了其在内存技术中平衡性能与微型化的潜力。

摘要:

随着对内存缩放的需求增加,需要在原子厚度上保持可靠性的同时实现低能耗的开关机制。滑动铁电性为这一挑战提供了有前途的平台:在超润滑、原子薄的范德华界面中自发出现的界面极化具有优异的疲劳抗性、超快切换和超低矫顽场。然而,滑动铁电体固有的极化弱限制了可用信号窗口,需要新的物理机制将细微的极化变化转化为显著的电阻对比。本文通过引入动量守恒的共振隧穿,实现了共振滑动铁电隧道结,其隧穿电电阻(TER)比高达225.65%,显著超过传统滑动铁电隧道结。此外,该设备实现了可调TER比、多态可编程性、高电流密度、鲁棒耐久性(系数变异<0.69%)、快切换(20 ns)、低切换能量(310 fJ)和低读电压(<0.2 V)。这些结果确立了滑动铁电性在内存技术性能与微型化之间的桥梁作用,并为下一代非易失性内存技术开辟了新途径。

英文摘要:

The escalating demand for memory scaling requires switching mechanisms that remain reliable at atomic thickness while operating with minimal energy consumption. Sliding ferroelectricity provides a promising platform for this challenge: the spontaneous interfacial polarization emerging at superlubric, atomically thin van der Waals interfaces endows exceptional fatigue resistance, ultrafast switching and ultralow coercive fields. Nevertheless, the intrinsically weak polarization of sliding ferroelectrics limits the available signal window, necessitating new physical mechanisms that can transduce subtle polarization variations into pronounced resistance contrasts. Here, we address this challenge by introducing momentum-conserving resonant tunneling between lattice-aligned graphene electrodes. The resulting resonant sliding ferroelectric tunnel junction achieves a tunneling electroresistance (TER) ratio of up to 225.65%, substantially exceeding that of conventional sliding ferroelectric tunnel junctions. In addition, the device delivers a tunable TER ratio, multistate programmability, high current density, robust endurance with a small coefficient of variation (<0.69%), fast switching (20 ns), low switching energy (310 fJ), and low read voltage (<0.2 V). Collectively, these results establish a unique role for sliding ferroelectricity in bridging the gap of memory technology between performance and miniaturization, and open a new pathway toward next-generation nonvolatile memory technologies.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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