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arXiv 2606.22015cond-mat.mtrl-scicond-mat.mes-hall
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双层1T'-WTe2中滑移铁电可调的传统和反常自旋霍尔效应

Sliding ferroelectricity tunable conventional and anomalous spin Hall effects in bilayer 1T'-WTe2

Xi’an Jiaotong University(西安交通大学);Shaanxi Yanyi Titanium Industry Company Limited(陕西言一钛业有限公司)

Chao Wu, Pengqiang Dong, Kai Wei, Hanbo Sun, Ping Li

AI总结:

提出利用滑移铁电性调控双层1T'-WTe2中的传统和反常自旋霍尔效应,实现无外磁场垂直磁化翻转,并发现显著增强的自旋霍尔电导率。

摘要:

自旋霍尔效应以其高速、低功耗和高可控性被公认为下一代存储和逻辑器件的关键使能技术。然而,主要挑战在于在自旋轨道矩器件中实现无需外磁场的180°磁化翻转。在此,我们提出了一种通过本征滑移铁电性调控传统和反常自旋霍尔效应的方法。重要的是,反常自旋霍尔效应能够实现垂直磁化的无场翻转。我们发现单层1T'-WTe2中具有显著的反常自旋霍尔电导率σ_{xy}^{y} = 45.62 (ℏ/e)S/cm和σ_{yx}^{y} = 56.84 (ℏ/e)S/cm。在双层1T'-WTe2中,这些值显著增强至σ_{xy}^{y} = -96.77 (ℏ/e)S/cm和σ_{yx}^{y} = 104.03 (ℏ/e)S/cm。更有趣的是,滑移铁电性使得传统和反常自旋霍尔电导率的符号和大小均可逆切换。这源于滑移铁电显著改变了Γ-X路径附近价带和导带的自旋贝里曲率贡献。我们的发现不仅揭示了滑移铁电性与自旋输运之间的强耦合,而且提出了一种非易失性电控自旋电子器件的策略。

英文摘要:

The spin Hall effect, recognized for its high-speed, low-power, and highly controllable characteristics, is a key enabler for next-generation memory and logic devices. However, a primary challenge lies in achieving 180$^{\circ}$ magnetization switching without an external magnetic field in spin-orbit torque devices. Here, we propose a method to tune the conventional and anomalous spin Hall effects by the intrinsic sliding ferroelectricity. Importantly, the anomalous spin Hall effect can enable the field-free switching of perpendicular magnetization. We find a substantial anomalous spin Hall conductivity of $σ_{xy}^{y}$ = 45.62 ($\hbar$/e)S/cm and $σ_{yx}^{y}$ = 56.84 ($\hbar$/e)S/cm in monolayer 1T'-WTe$_2$. These values are significantly enhanced to $σ_{xy}^{y}$ = -96.77 ($\hbar$/e)S/cm and $σ_{yx}^{y}$ = 104.03 ($\hbar$/e)S/cm in the bilayer 1T'-WTe$_2$. More interestingly, the sliding ferroelectricity enables reversible switching of the signs and magnitudes for both the conventional and anomalous spin Hall conductivities. This originates from the fact that the sliding ferroelectric markedly shifts the relative spin Berry curvature contributions from the valence and conduction bands around the $Γ$-X path. Our findings not only reveal a strong coupling between sliding ferroelectricity and spin transport, but also propose a strategy for the nonvolatile electrical control of spintronic devices.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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