AI 中文总结
研究双层ReIrGe2Se6中的多态铁电性，通过第一性原理计算预测其有多种FE极化配置及相关电子结构演化。该材料能实现不同谷霍尔效应切换，磁化反转可切换谷和自旋通道，为可编程贝里曲率相关输运提供多态铁电平台。
AI 中文摘要
二维多铁性材料结合了磁性和铁电（FE）有序以及强磁电耦合，是高密度信息存储和低功耗多态电子学的理想平台。然而，传统铁电性的固有双稳态对在单一材料中实现多个非易失态和可编程贝里曲率驱动的输运响应构成了重大挑战。在此，通过第一性原理计算，我们预测了AA0堆叠双层ReIrGe2Se6中的多态铁电性。该系统具有四种能量稳定的FE极化配置，其中三种通过可逆切换路径相连，而第四种表现出单向切换路径。不同的FE配置进一步导致电子结构中出现循环的半导体-金属-半导体演化。值得注意的是，FE极化切换与层自由度和贝里曲率密切相关。与不同FE配置相关的层依赖静电势控制着带边态的层特性，从而将贝里曲率锁定到特定的层通道。结果，双层ReIrGe2Se6能够在反常谷霍尔效应和层锁定反常谷霍尔效应之间切换，提供对层、谷和自旋分辨输运响应的非易失控制。此外，磁化反转会切换谷和自旋通道，同时保留层分辨特性。这些结果将双层ReIrGe2Se6确立为用于可编程贝里曲率相关输运的多态铁电平台，为基于拓扑的多功能电子和谷电子器件提供了微观见解。
英文摘要
Two-dimensional multiferroic materials, which combine magnetic and ferroelectric (FE) orders with strong magnetoelectric coupling, represent ideal platforms for high-density information storage and low-power multistate electronics. However, the intrinsic bistability of conventional ferroelectricity poses a substantial challenge to realizing multiple nonvolatile states and programmable Berry-curvature driven transport responses within a single material. Here, using first-principles calculations, we predict multistate ferroelectricity in AA0-stacked bilayer ReIrGe2Se6. The system hosts four energetically stable FE polarization configurations, among which three are connected through reversible switching pathways, while the fourth exhibits a unidirectional switching pathway. The distinct FE configurations further give rise to a cyclic semiconductor-metal-semiconductor evolution in the electronic structure. Notably, FE polarization switching is intimately coupled to layer degrees of freedom and Berry curvature. The layer-dependent electrostatic potential associated with different FE configurations controls the layer character of the band-edge states, thereby locking the Berry curvature to specific layer channels. As a result, bilayer ReIrGe2Se6 enables switching between an anomalous valley Hall effect and a layer-locked anomalous valley Hall effect, providing nonvolatile control of layer, valley, and spin-resolved transport responses. In addition, magnetization reversal switches the valley and spin channels while preserving the layer-resolved character. These results establish bilayer ReIrGe2Se6 as a multistate ferroelectric platform for programmable Berry-curvature related transport, offering microscopic insight into topology based multifunctional electronic and valleytronic devices.
CommentsThe authors have withdrawn this manuscript because the current analysis is incomplete and the conclusions require substantial revision. The authors do not plan to resubmit a revised version at this time
