Nitrogen vacancy (NV) centers, optically active atomic defects in diamond, have been widely applied to emerging quantum sensing, imaging, and network efforts, showing unprecedented field sensitivity and nanoscale spatial resolution. Many of these advantages derive from their excellent quantum-coherence, controllable entanglement, and high fidelity of operations, enabling opportunities to outperform the classical counterpart. Exploiting this cutting-edge quantum metrology, we report noninvasive measurement of intrinsic spin fluctuations of magnetic insulator thin films with a spontaneous out-of-plane magnetization. The measured field dependence of NV relaxation rates is well correlated to the variation of magnon density and band structure of the magnetic samples, which are challenging to access by the conventional magnetometry methods. Our results highlight the significant opportunities offered by NV centers in diagnosing the noise environment of functional magnetic elements, providing valuable information to design next-generation, high-density, and scalable spintronic devices.
We have investigated crystalline magnetic anisotropy in the electric field (EF) for the Fe-Pt surface which have a large perpendicular anisotropy, by means of the first-principles approach. The anisotropy is reduced linearly with respect to the inward EF, associated with the induced spin density around the Fe layer. Although the magnetic anisotropy energy (MAE) density reveals the large variation around the atoms, the intrinsic contribution to the MAE is found to mainly come from the Fe layer.
We study theoretically the current-induced magnetic domain wall motion in a metallic nanowire with perpendicular magnetic anisotropy. The anisotropy can reduce the critical current density of the domain wall motion. We explain the reduction mechanism and identify the maximal reduction conditions. This result facilitates both fundamental studies and device applications of the current- induced domain wall motion.
X-ray spectroscopy measurements have been performed on a series of Pt/Co/AlOx trilayers to investigate the role of Co oxidation in the perpendicular magnetic anisotropy of the Co/AlOx interface. It is observed that high temperature annealing modifies the magnetic properties of the Co layer, inducing an enhancement of the perpendicular magnetic anisotropy. The microscopic structural properties are analyzed via X-ray Absorption Spectroscopy, X-ray Magnetic Circular Dichroism and X-ray Photoelectron Spectroscopy measurements. It is shown that annealing enhances the amount of interfacial oxide, wh…
We report on perpendicular magnetic anisotropy (PMA) in a Pt/Co2FeAl/MgO sandwiched structure with a thick Co2FeAl layer of 2-2.5 nm. The PMA is thermally stable that the anisotropy energy density Ku is 1.3{\times}106 erg/cm3 for the structure with 2 nm Co2FeAl after annealing at 350 oC. The thicknesses of Co2FeAl and MgO layers greatly affect the PMA. Our results provide an effective way to realize relative thick perpendicularly magnetized Heusler alloy films.
We study thermally assisted domain wall generation in perpendicular magnetic anisotropy CoFeB trilayer nanowires by the effect of Joule heating. The anomalous Hall effect is utilized to detect magnetization reversal in order to study the domain wall generation. We observe a statistical distribution in the switching process which is consistent with the thermal activation process. Our results show that the proposed method provides an efficient way for generating domain walls in perpendicular magnetic nanowires at predefined locations.
To address thermal stability issues for spintronic devices with a reduced size, we investigate spin-orbit torque in Co/Pt multilayers with strong perpendicular magnetic anisotropy. Note that the spin-orbit torque arises from the global imbalance of the spin currents from the top and bottom interfaces for each Co layer. By inserting Ta or Cu layers to strengthen the top-down asymmetry, the spin-orbit torque efficiency can be greatly modified without compromised perpendicular magnetic anisotropy. Above all, the efficiency builds up as the number of layers increases, realizing robust thermal stab…
Thickness modulation at the edges of nanostructured magnetic thin films is shown to have important effects on their perpendicular magnetic anisotropy. Thin film wires with tapered edges were made from [Co/Pd]20 multilayers or L10-FePt films using liftoff with a double layer resist. The effect of edge taper on the reversal process was studied using magnetic force microscopy and micromagnetic modeling. In [Co/Pd]20 the anisotropy was lower in the tapered edge regions which switched at a lower reverse field compared to the center of the wire. The L10-FePt wires showed opposite behavior with the t…
We report the magnetic properties of yttrium iron garnet (YIG) thin films grown by pulsed laser deposition technique. The films were deposited on Si (100) substrates in the range of 15-50 nm thickness. Magnetic characterizations were investigated by ferromagnetic resonance spectra. Perpendicular magnetic easy axis was achieved up to 50 nm thickness. We observed that the perpendicular anisotropy values decreased by increasing the film thickness. The origin of the perpendicular magnetic anisotropy (PMA) was attributed to the texture and the lattice distortion in the YIG thin films. We anticipate…
A prototype Hamiltonian for the generic patterned magnetic structures, of dipolar interaction with perpendicular anisotropy, is investigated within the finite-size framework by Landau-Lifshift-Gilbert classical spin dynamics. Modifications on the ground state phase diagram are discussed with an emphasis on the disappearance of continuous degeneracy in the ground state of in-plane phase due to the finite lattice size effect. The symmetry-governed ground state evolution upon the lattice size increase provides a critical insight into the systematic transition to the infinite extreme.
Ta/CoFeB/MgO trilayers with perpendicular magnetic anisotropy are expected to play a key role in the next generation of current and electric field switched memory and logic devices. In this study we use Kerr microscopy alongside electrical transport measurement to gain insight into the underlying switching mechanisms of such devices. We find switching to be a stochastic, domain wall driven process, the speed of which is strongly dependent on the switching current. Kerr imaging shows domain nucleation at the edge of the device which modelling reveals is likely assisted by the perpendicular comp…
We report the fabrication of perpendicular ferromagnetic electrodes for tunneling devices consist of van der Waals heterostructure. We found MgO/Co/Pt films on Hexagonal BN shows perpendicular magnetic anisotropy (PMA) with the easy axis perpendicular to the substrate. Vacuum annealing enhances the perpendicular anisotropy. The easy axis along the perpendicular direction persists up to room temperature with the Pt layer thickness ranges from 1.5 to 5 nm. We employed the PMA electrodes to construct tunneling devices on graphene and monolayer WSe2, where spin injection characteristics and field …
Multifunctional materials composed of ultrathin magnetic films with perpendicular magnetic anisotropy combined with ferroelectric substrates represent a new approach toward low power, fast, high density spintronics. Here we demonstrate Co/Ni multilayered films with tunable saturation magnetization and perpendicular anisotropy grown directly on ferroelectric PZT [Pb(Zr_xTi_1-x)O_3] substrate plates. Electric fields up to +/- 2 MV/m expand the PZT by 0.1% and generate at least 0.02% in-plane compression in the Co/Ni multilayered film. Modifying the strain with a voltage can reduce the coercive f…
We use broadband ferromagnetic resonance spectroscopy and x-ray diffraction to investigate the fundamental origin of perpendicular anisotropy in Co90Fe10/Ni multilayers. By careful evaluation of the spectroscopic g-factor, we determine the orbital moment along the out-of-plane and in-plane directions. For the multilayers, we find a direct relationship between the orbital moment asymmetry and the perpendicular anisotropy, consistent with the theory of Bruno [P.Bruno, Phys. Rev. B, 39, 865 (1989)]. A systematic x-ray diffraction study revealed the presence of a trigonal strain as high as 0.7 % i…
We present a method to map the saturation magnetization of soft ultrathin films with perpendicular anisotropy, and we illustrate it to assess the compositional dependence of the magnetization of CoFeB(1 nm)/MgO films. The method relies on the measurement of the dipolar repulsion of parallel domain walls that define a linear domain. The film magnetization is linked to the field compressibility of the domain. The method also yields the minimal distance between two walls before their merging, which sets a practical limit to the storage density in spintronic devices using domain walls as storage e…
We have investigated Surface Acoustic Wave (SAW) induced ferromagnetic resonance (FMR) assisted Spin Transfer Torque (STT) switching of perpendicular MTJ (p-MTJ) with inhomogeneities using micromagnetic simulations that include the effect of thermal noise. With suitable frequency excitation, the SAW can induce ferromagnetic resonance in magnetostrictive materials, and the magnetization can precesses in a cone with high deflection from the perpendicular direction. With incorporation of inhomogeneity via lateral anisotropy variation as well as room temperature thermal noise, the magnetization pr…
The perpendicular magnetic anisotropy K$_e$$_f$$_f$, magnetization reversal, and field-driven domain wall velocity in the creep regime are modified in Pt/Co(0.85-1.0 nm)/Pt thin films by strain applied via piezoelectric transducers. K$_e$$_f$$_f$, measured by the extraordinary Hall effect, is reduced by 10 kJ/m$^3$ by tensile strain out-of-plane ε$_z$ = 9 x 10-4, independently of the film thickness, indicating a dominant volume contribution to the magnetostriction. The same strain reduces the coercive field by 2-4 Oe, and increases the domain wall velocity measured by wide-field Kerr microscop…
Using first-principles calculations, we elucidate microscopic mechanisms of perpendicular magnetic anisotropy (PMA)in Fe/MgO magnetic tunnel junctions through evaluation of orbital and layer resolved contributions into the total anisotropy value. It is demonstrated that the origin of the large PMA values is far beyond simply considering the hybridization between Fe-3d$ and O-2p orbitals at the interface between the metal and the insulator. On-site projected analysis show that the anisotropy energy is not localized at the interface but it rather propagates into the bulk showing an attenuating o…
We investigate magnetic anisotropy and magnetization reversal mechanism in chromium telluride thin films grown by molecular beam epitaxy. We report existence of strong perpendicular anisotropy in these thin films, along with a relatively strong second order anisotropy contribution. The angular variation of the switching field observed from the magnetoresistance measurement is explained quantitatively using a one-dimensional defect model. The model reveals the relative roles of nucleation and pinning in the magnetization reversal, depending on the applied field orientation. Micromagnetic simula…
Perpendicular magnetic anisotropy (PMA) and dynamic magnetization reversal process in [CoFeB $t$ nm/Pd 1.0 nm]$_n$ ($t$ = 0.4, 0.6, 0.8, 1.0, and 1.2 nm; $n$ = 2 - 20) multilayer films have been studied by means of magnetic hysteresis and Kerr effect measurements. Strong and controllable PMA with an effective uniaxial anisotropy up to 7.7$\times$ 10$^6$ J.m$^{-3}$ and a saturation magnetization as low as 200 emu/cc are achieved. Surface/interfacial anisotropy of CoFeB/Pd interfaces, the main contribution to the PMA, is separated from the effective uniaxial anisotropy of the films, and appears …
We report strongly enhanced perpendicular magnetic anisotropy (PMA) of Co films by graphene coating from both first-principles and experiments. Our calculations show that graphene can dramatically boost the surface anisotropy of Co films up to twice the value of its pristine counterpart and can extend the out-of-plane effective anisotropy up to unprecedented thickness of 25~Å. These findings are supported by our experiments on graphene coating on Co films grown on Ir substrate. Furthermore, we report layer-resolved and orbital-hybridization-resolved anisotropy analysis which help understanding…
The perpendicular magnetic anisotropy (PMA) arising at the interface between ferromagnetic transition metals and metallic oxides are investigated via first-principles calculations. In this work very large values of PMA up to 3 erg/cm$^2$ at Fe$|$MgO interfaces are reported in agreement with recent experiments. The origin of PMA is attributed to overlap between O-$p_z$ and transition metal $d_{z^2}$ orbitals hybridized with $d_{xz(yz)}$ orbitals with stronger spin-orbit coupling induced splitting around the Fermi level for perpendicular magnetization orientation. Furthemore, it is shown that th…
We study the spectral characteristics of spin current nano-oscillators based on the Pt/[Co/Ni] magnetic multilayer with perpendicular magnetic anisotropy. By varying the applied magnetic field and current, both localized and propagating spin wave modes of the oscillation are achieved. At small fields, we observe an abrupt onset of the modulation sidebands. We use micromagnetic simulations to identify this state as a dynamical magnetic skyrmion stabilized in the active device region by spin current injection, whose current-induced dynamics is accompanied by the gyrotropic motion of the core due…
Spin orbit torque (SOT) provides an efficient way of generating spin current that promises to significantly reduce the current required for switching nanomagnets. However, an in-plane current generated SOT cannot deterministically switch a perpendicularly polarized magnet due to symmetry reasons. On the other hand, perpendicularly polarized magnets are preferred over in-plane magnets for high-density data storage applications due to their significantly larger thermal stability in ultra-scaled dimensions. Here we show that it is possible switch a perpendicularly polarized magnet by SOT without …
Spin-orbit torques are studied in Ta/TbFeCo patterned structures with a bulk perpendicular magnetic anisotropy (bulk-PMA) for the first time. The current-induced magnetization switching is investigated in the presence of a perpendicular, longitudinal, or transverse field. In order to rule out Joule heating effect, switching of the magnetization is also demonstrated using current pulses. It is found that the anti-damping torque correlated with spin Hall effect is very strong, and a spin Hall angle of about 0.12 is obtained. The field-like torque related with Rashba effect is negligible in this …
We report on a strong perpendicular magnetic anisotropy in [CoFe 0.4nm/Pd t]6 (t = 1.0-2.0 nm) multilayers fabricated by DC sputtering in a ultrahigh vacuum chamber. Saturation magnetization, $M_s$, and uniaxial anisotropy, $K_u$, of the multilayers decrease with increasing the spacing thickness, with a $M_s$ of 155 emu/cc and a $K_u$ of 1.14$\times 10^5$ J/m$^3$ at a spacing thickness of t = 2 nm. X-ray absorption spectroscopy and X-ray magnetic circular dichroism measurements reveal that spin and orbital magnetic moments of Co and Fe in CoFe film decrease as function of Pd thickness, indicat…
A characteristic dependence of voltage control of perpendicular magnetic anisotropy (VCMA) on oxygen migration at Fe/MgO interfaces was revealed by performing systematic {\it ab initio} study of the energetics of the oxygen path around the interface. We find that the surface anisotropy energy exhibits a Boltzmann sigmoidal behavior as a function of the migrated O-atoms concentration. The obtained variation of the VCMA efficiency factor $β$ reveals a saturation limit beyond a critical concentration of migrated O, about $54\%$, at which the anisotropy switches from perpendicular to in plane. Fur…
We report that thin films of a prototype topological insulator, Bi$_{2}$Se$_{3}$, can be epitaxially grown onto the (0001) surface of BaFe$_{12}$O$_{19}$(BaM), a magnetic insulator with high Curie temperature and large perpendicular anisotropy. In the Bi$_2$Se$_3$ thin films grown on non-magnetic substrates, classic weak antilocalization (WAL) is manifested as cusp-shaped positive magnetoresistance (MR) in perpendicular magnetic fields and parabola-shaped positive MR in parallel fields, whereas in Bi$_{2}$Se$_{3}$/BaM heterostructures the low field MR is parabola-shaped, which is positive in p…
Using first-principles calculations, we investigated the impact of chromium (Cr) and vanadium (V) impurities on the magnetic anisotropy and spin polarization in Fe/MgO magnetic tunnel junctions. It is demonstrated using layer resolved anisotropy calculation technique, that while the impurity near the interface has a drastic effect in decreasing the perpendicular magnetic anisotropy (PMA), its position within the bulk allows maintaining high surface PMA. Moreover, the effective magnetic anisotropy has a strong tendency to go from in-plane to out-of-plane character as a function of Cr and V conc…
We report that strong perpendicular magnetic anisotropy of the ferromagnetic layer in a W/CoFeB/MgO multilayer structure can be established by inserting a Hf layer as thin as 0.25 nm between the W and CoFeB layers. The Hf spacer also allows transmission of spin currents generated by an in-plane charge current in the W layer to apply strong spin torque on the CoFeB, thereby enabling current-driven magnetic switching. The antidamping-like and field-like components of the spin torque exerted on a 1 nm CoFeB layer are of comparable magnitudes in this geometry. Both components originate from the sp…
We propose an all-electric implementation of a precessionally switched perpendicular magnetic anisotropy magneto-tunneling-junction (p-MTJ) based toggle memory cell where data is written with voltage-controlled-magnetic-anisotropy (VCMA) without requiring an in-plane magnetic field. The soft layer of the MTJ is a two-phase (magnetostrictive/piezoelectric) multiferroic which is electrically stressed to produce an effective in-plane magnetic field around which the magnetization precesses to complete a flip when the VCMA voltage pulse duration and the stress duration are independently adjusted to…
Novel 2D ferromagnets with high Curie temperature and large perpendicular magnetic anisotropy are especially attractive owing to the future promising application in modern spintronics, but meanwhile the 2D ferromagnetic materials with high Curie temperature and large perpendicular magnetic anisotropy are rarely reported. Based on density functional theory (DFT) calculations, we predict a new kind of 2D ferromagnetic materials - GdB2N2, which possesses large magnetic moment, high Curie temperature (335 K) and large perpendicular magnetic anisotropy (10.38 meV/f.u.). Biaxial strain ranging from …
Transition metal ferromagnetic films with perpendicular magnetic anisotropy (PMA) have ferromagnetic resonance (FMR) linewidths that are one order of magnitude larger than soft magnetic materials, such as pure iron (Fe) and permalloy (NiFe) thin films. A broadband FMR setup has been used to investigate the origin of the enhanced linewidth in Ni$|$Co multilayer films with PMA. The FMR linewidth depends linearly on frequency for perpendicular applied fields and increases significantly when the magnetization is rotated into the film plane. Irradiation of the film with Helium ions decreases the PM…
Engineering magnetic anisotropy in a ferro- or ferrimagnetic (FM) thin film is crucial in spintronic device. One way to modify the magnetic anisotropy is through the surface of the FM thin film. Here, we report the emergence of a perpendicular magnetic anisotropy (PMA) induced by interfacial interactions in a heterostructure comprised of a garnet ferrimagnet, Y3Fe5O12 (YIG), and the low-symmetry, high spin orbit coupling (SOC) transition metal dichalcogenide, WTe2. At the same time, we also observed an enhancement in Gilbert damping in the WTe2 covered YIG area. Both the magnitude of interface…
We report that by measuring current-induced hysteresis loop shift versus in-plane bias magnetic field, the spin Hall effect (SHE) contribution of the current-induced effective field per current density, $χ_{SHE}$, can be estimated for Pt and Ta-based magnetic heterostructures with perpendicular magnetic anisotropy (PMA). We apply this technique to a Pt-based sample with its ferromagnetic (FM) layer being wedged-deposited and discover an extra effective field contribution, $χ_{Wedged}$, due to the asymmetric nature of the deposited FM layer. We confirm the correlation between $χ_{Wedged}$ and t…
Cr2Ge2Te6 (CGT), a layered ferromagnetic insulator, has attracted a great deal of interest recently owing to its potential for integration with Dirac materials to realize the quantum anomalous Hall effect (QAHE) and to develop novel spintronics devices. Here, we study the uniaxial magnetic anisotropy energy of single-crystalline CGT and determine that the magnetic easy axis is directed along the c-axis in its ferromagnetic phase. In addition, CGT is an insulator below the Curie temperature. These properties make CGT a potentially promising candidate substrate for integration with topological i…
We experimentally study spin-Hall nano-oscillators based on [Co/Ni] multilayers with perpendicular magnetic anisotropy. We show that these devices are capable of single-frequency auto-oscillations at current densities comparable to those in the in-plane magnetized oscillators. The demonstrated oscillators exhibit large magnetization precession amplitudes, and their oscillation frequency is highly tunable by the electric current. These features make them promising for applications in high-speed integrated microwave circuits.
We compute the magnetocrystalline anisotropy energy within two-dimensional Rashba models. For a ferromagnetic free-electron Rashba model, the magnetic anisotropy is exactly zero regardless of the strength of the Rashba coupling, unless only the lowest band is occupied. For this latter case, the model predicts in-plane anisotropy. For a more realistic Rashba model with finite band width, the magnetic anisotropy evolves from in-plane to perpendicular and back to in-plane as bands are progressively filled. This evolution agrees with first-principles calculations on the interfacial anisotropy, sug…
We present a theoretical study on interfacial magnetocrystalline anisotropy for Fe/MgAl$_2$O$_4$. This system has a very small lattice mismatch at the interface and therefore is suitable for realizing a fully coherent ferromagnet/oxide interface for magnetic tunnel junctions. On the basis of density functional theory, we calculate the interfacial anisotropy constant $K_{\rm i}$ and show that this system has interfacial perpendicular magnetic anisotropy (PMA) with $K_{\rm i} \approx 1.2\,{\rm mJ/m^2}$, which is a little bit smaller than that of Fe/MgO ($K_{\rm i} \approx$ 1.5--1.7$\,{\rm mJ/m^2…
Layered ferromagnets with high coercivity have special applications in nanoscale memory elements in electronic circuits, such as data storage. Therefore, searching for new hard ferromagnets and effectively tuning or enhancing the coercivity are the hottest topics in layered magnets today. Here, we report a strain tunability of perpendicular magnetic anisotropy in van der Waals (vdW) ferromagnets VI3 using magnetic circular dichroism measurements. For an unstrained flake, the M-H curve shows a rectangular-shaped hysteresis loop with perpendicular magnetic anisotropy and a large coercivity (up t…
Magnetic tunnel junctions with perpendicular anisotropy form the basis of the spin-transfer torque magnetic random-access memory (STT-MRAM), which is non-volatile, fast, dense, and has quasi-infinite write endurance and low power consumption. Based on density functional theory (DFT) calculations, we propose an alternative design of magnetic tunnel junctions comprising Fe(n)Co(m)Fe(n)/MgO storage layers with greatly enhanced perpendicular magnetic anisotropy (PMA) up to several mJ/m2, leveraging the interfacial perpendicular anisotropy of Fe/MgO along with a stress-induced bulk PMA discovered w…
Reflection high energy electron diffraction (RHEED), scanning tunneling microscopy (STM), vibrating sample magnetometry and other physical property measurements are used to investigate the structure, morphology, magnetic and magneto-transport properties of (001)-oriented Cr$_2$Te$_3$ thin films grown on Al$_2$O$_3$(0001) and Si(111)-(7$\times$7) surfaces by molecular beam epitaxy (MBE). Streaky RHEED patterns indicate flat smooth film growth on both substrates. STM studies show the hexagonal arrangements of surface atoms. Determination of the lattice parameter from atomically resolved STM imag…
Centro Atómico Bariloche（巴里洛切原子中心）；Instituto Balseiro, Universidad Nacional de Cuyo–CNEA（巴尔塞罗研究所，门多萨国立大学-国家原子能委员会）；Instituto de Nanociencia y Materiales de Aragón (INMA-CSIC)（阿拉贡纳米与材料研究所）；Universidad de Zaragoza（萨拉戈萨大学）
We theoretically study domain wall oscillations upon the injection of a dc current through a geometrically constrained wire with perpendicular magnetic anisotropy. The oscillation frequency spectrum can be tuned by the injected current density, but additionally by the application of an external magnetic field independent of the power. The results of analytical calculations are supported by micromagnetic simulations based on the Landau-Lifshitz-Gilbert equation. The simple concept of our localized steady-state oscillator might prove useful as a nanoscale microwave generator with possible applic…
Nanodots with magnetic vortices have many potential applications, such as magnetic memories (VRAMs) and spin transfer nano-oscillators (STNOs). Adding a perpendicular anisotropy term to the magnetic energy of the nanodot it becomes possible to tune the vortex core properties. This can be obtained, e.g., in Co nanodots by varying the thickness of the Co layer in a Co/Pt stack. Here we discuss the spin configuration of circular and elliptical nanodots for different perpendicular anisotropies; we show for nanodisks that micromagnetic simulations and analytical results agree. Increasing the perpen…
Magnonic crystals are structures with periodically varied magnetic properties that are used to control collective spin-wave excitations. With micromagnetic simulations, we study spin-wave spectra in a 2D antidot lattice based on a multilayered thin film with perpendicular magnetic anisotropy (PMA). We show that the modification of the PMA near the antidot edges introduces interesting modifications to the spin-wave spectra, even in a fully saturated state. In particular, the spectra split in two types of excitations, bulk modes with amplitude concentrated in a homogeneous part of antidot lattic…
We present the complete zero temperature phase diagram of a model for ultrathin films with perpendicular anisotropy. The whole parameter space of relevant coupling constants is studied in first order anisotropy approximation. Because the ground state is known to be formed by perpendicular stripes separated by Bloch walls, a standard variational approach is used, complemented with specially designed Monte Carlo simulations. We can distinguish four regimes according to the different nature of striped domains: a high anisotropy Ising regime with sharp domain walls, a saturated stripe regime with …
We present a ferromagnetic resonance (FMR) study of the effect of Helium ion irradiation on the magnetic anisotropy, the linewidth and the Gilbert damping of a Co/Ni multilayer coupled to Co/Pd bilayers. The perpendicular magnetic anisotropy decreases linearly with He ion fluence, leading to a transition to in-plane magnetization at a critical fluence of 5x10^{14} ions/cm^2. We find that the damping is nearly independent of fluence but the FMR linewidth at fixed frequency has a maximum near the critical fluence, indicating that the inhomogeneous broadening of the FMR line is a non-monotonic fu…
We study interfacial magnetocrystalline anisotropies in various Fe/semiconductor heterostructures by means of first-principles calculations. We find that many of those systems show perpendicular magnetic anisotropy (PMA) with a positive value of the interfacial anisotropy constant $K_{\rm i}$. In particular, the Fe/CuInSe$_2$ interface has a large $K_{\rm i}$ of $\sim 2.3\,{\rm mJ/m^2}$, which is about 1.6 times larger than that of Fe/MgO known as a typical system with relatively large PMA. We also find that the values of $K_{\rm i}$ in almost all the systems studied in this work follow the we…
The transverse anisotropy constant and the related Döring mass density are key parameters of the one-dimensional model to describe the motion of magnetic domain walls. So far, no general framework is available to determine these quantities from static characterizations such as magnetometry measurements. Here, we derive a universal analytical expression to calculate the transverse anisotropy constant for the important class of perpendicular magnetic multilayers. All the required input parameters of the model, such as the number of repeats, the thickness of a single magnetic layer, and the layer…
As an alternative to conventional magnetic field, the effective spin-orbit field in transition metals, derived from the Rashba field experienced by itinerant electrons confined in a spatial inversion asymmetric plane through the s-d exchange interaction, is proposed for the manipulation of magnetization. Magnetization switching in ferromagnetic thin films with perpendicular magnetocrystalline anisotropy can be achieved by current induced spin-orbit field, with small in-plane applied magnetic field. Spin-orbit field induced by current pulses as short as 10 ps can initiate ultrafast magnetizatio…
The influence of the in-plane anisotropy on the magnetization of a nanogranular film with perpendicular anisotropy has been studied. It is shown that if a magnetic field is tilted with respect to the film normal, a critical transition from the inhomogeneous magnetic state of granules with noncollinear directions of their moments to the homogeneous one with parallel orientation of granular magnetic moments takes place. The in-plane anisotropy is found to affect the angular dependence of the critical field. The ensemble of oriented biaxial particles is theoretically described in the double-well …
We study skyrmions in magnetic thin films with structural inversion asymmetry perpendicular to the film plane. We determine the magnetization texture of a single skyrmion and its dependence on the strength of the Dzyaloshinskii-Moriya interaction relative to the magnetostatic energy. Furthermore, we construct a phenomenological model that describes the interaction between the motion of skyrmions and electric currents to lowest order in spin-orbit coupling. We estimate the experimental verifiable velocities for current-driven motion of skyrmion textures based on available results obtained from …
We report on the controlled switching of domain wall (DW) magnetization in aligned stripe domain structures, stabilized in [Co (0.44 nm)/Pt (0.7 nm)]$_X$ ($X = 48$, 100, 150) multilayers with perpendicular magnetic anisotropy. The switching process, induced by an external magnetic field, is monitored by measuring the evolution of the in-plane magnetization. % We show that the remanent in-plane magnetization originates from the polarization of the Bloch-type DWs. With micromagnetic simulations, we reveal that the reversal of the DW polarization is the result of the emergence and collapse of hor…
The magnetic vortex structure, that is present in several nanoscopic systems, is stable and can be manipulated through the application of a magnetic field or a spin polarized current. The size and shape of the core are strongly affected by the anisotropy, however its role on the core behavior has not yet been clarified. In the present work we investigate the influence of a perpendicular anisotropy on the annihilation and shape of magnetic vortex cores in permalloy disks. We have used both micromagnetic simulations with the OOMMF code, and an analytical model that assumes that the shape of the …
Electric control of multiple domain walls (DWs) motion is demonstrated by Pt/Co/Pt nanotracks with perpendicular magnetic anisotropy. Due to the weak microstructural disorders with small DW propagation field, the purely current-driven DW motion is achieved in the creep regime at current densities less than 10^7 A/cm^2 at room temperature. It is confirmed that by use of a scanning magneto-optical Kerr effect microscope, several DWs are simultaneously and identically displaced by the same distance in the same direction. Utilizing such DWs motion, we succeed to realize random bits writing and tra…
