arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 2008.12754cond-mat.mtrl-scicond-mat.str-el
收藏

YTiO3的电子结构和空穴极化子

Electronic Structure and Small Hole Polarons in YTiO3

Jin Yue, Nicholas F. Quackenbush, Iflah Laraib, Henry Carfagno, Sajna Hameed, Abhinav Prakash, Laxman R. Thoutam, James M. Ablett, Tien-Lin Lee, Martin Greven, … 展开作者

Jin Yue, Nicholas F. Quackenbush, Iflah Laraib, Henry Carfagno, Sajna Hameed, Abhinav Prakash, Laxman R. Thoutam, James M. Ablett, Tien-Lin Lee, Martin Greven, Matthew F. Doty, Anderson Janotti, Bharat Jalan

摘要:

YTiO 3(YTO)是典型的铁磁有序莫特绝缘体,在强电子关联效应和轨道有序研究中具有重要意义。在这里,我们报告的第一个分子束外延(MBE)生长的YTO薄膜,结合理论和实验表征的电子结构和电荷输运性质。讨论了YTO分子束外延生长的障碍,并提出了克服这些障碍的可能途径。薄膜和大块单晶的DC传输和Seebeck测量确定p型Arrhenius传输行为,薄膜中的活化能为~ 0.17 eV,与混合密度泛函理论(DFT)计算的小孔极化子迁移的能垒一致。硬X射线光电子能谱学测量(HAXPES)显示在费米能级以下1.1 eV处的较低哈伯德带(LHB),而从光致发光(PL)测量确定约1.5 eV的Mott-Hubbard带隙。这些发现提供了关键的洞察力的电子能带结构的YTO和相关材料。

英文摘要:

As a prototypical Mott insulator with ferromagnetic ordering, YTiO3 (YTO) is of great interest in the study of strong electron correlation effects and orbital ordering. Here we report the first molecular beam epitaxy (MBE) growth of YTO films, combined with theoretical and experimental characterization of the electronic structure and charge transport properties. The obstacles of YTO MBE growth are discussed and potential routes to overcome them are proposed. DC transport and Seebeck measurements on thin films and bulk single crystals identify p-type Arrhenius transport behavior, with an activation energy of ~ 0.17 eV in thin films, consistent with the energy barrier for small hole polaron migration from hybrid density functional theory (DFT) calculations. Hard X-ray photoelectron spectroscopy measurements (HAXPES) show the lower Hubbard band (LHB) at 1.1 eV below the Fermi level, whereas a Mott-Hubbard band gap of ~1.5 eV is determined from photoluminescence (PL) measurements. These findings provide critical insight into the electronic band structure of YTO and related materials.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑