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arXiv 2008.06067cond-mat.mes-hallquant-ph
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高掺杂p型锗中超导相的观察

Observation of Distinct Superconducting Phases in Hyperdoped p-type Germanium

Kasra Sardashti, Tri D. Nguyen, Wendy L. Sarney, Asher C. Leff, Mehdi Hatefipour, Matthieu C. Dartiailh, Joseph Yuan, William Mayer, Javad Shabani

摘要:

在第IV族半导体中实现超导性可能会对量子技术未来的发展方向产生重大影响。因此,必须了解硅和锗等材料中超导相的性质。在这里,我们报告了系统的合成和表征的超掺杂锗镓离子注入超过其溶解度极限制备的超导相。通过改变注入能量和激活退火温度来调整所得到的结构和物理特性。令人惊讶的是,除了弱耦合超导Ga簇的多晶相,我们发现一个纳米晶相,准2D特性组成的一个薄的Ga膜限制在顶部表面附近。新相显示出强无序的特征,如异常的B ${\rm c}$温度依赖性和磁电阻等温线的交叉。除了使用超掺杂锗作为一个潜在的试验台,用于研究签名的量子相变(如量子格里菲斯奇点),我们的研究结果表明,超掺杂锗纳米晶相集成到超导电路由于其二维性质的可能性。

英文摘要:

Realization of superconductivity in Group IV semiconductors could have a strong impact in the direction quantum technologies will take in the future. Therefore, it is imperative to understand the nature of the superconducting phases in materials such as Silicon and Germanium. Here, we report systematic synthesis and characterization of superconducting phases in hyperdoped Germanium prepared by Gallium ion implantation beyond its solubility limits. The resulting structural and physical characteristics have been tailored by changing the implantation energy and activation annealing temperature. Surprisingly, in addition to the poly-crystalline phase with weakly-coupled superconducting Ga clusters we find a nano-crystalline phase with quasi-2D characteristics consisting of a thin Ga film constrained near top surfaces. The new phase shows signatures of strong disorder such as anomalous B${\rm c}$ temperature dependence and crossings in magentoresistance isotherms. Apart from using hyperdoped Ge as a potential test-bed for studying signatures of quantum phase transitions (e.g. quantum Griffith singularity), our results suggest the possibility of integration of hyperdoped Ge nano-crystalline phase into superconducting circuits due to its 2D nature.

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