由耐磁场超导铂铱锗硅化物近邻化的掩埋锗量子阱
Buried germanium quantum well proximitised by magnetic field-resilient superconducting platinum iridium germanosilicide
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中文总结 AI 辅助
该研究制备出耐磁场的超导PtIrSiGe，通过光刻与高迁移率平面锗集成，经500°C退火仍保持量子阱和二维空穴气性能，并在栅控约瑟夫森结/SQUID中实现掩埋锗量子阱的近邻化，为可扩展量子技术提供新平台。
中文摘要 AI 辅助
超导体-半导体混合系统为量子技术提供了一个多功能平台，应用范围从超导自旋界面到拓扑量子器件。要实现可扩展的方案，需要在可达到的温度下具有高临界场（>1T）、且能与低无序度半导体异质结集成的超导体。本文中，我们展示了一种超导铂铱锗硅化物（PtIrSiGe），其面外临界磁场高达B⊥=1.9T，临界温度Tc约为1.85K，通过自上而下的光刻工艺与迁移率μ=1.3×10^6 cm²/Vs的平面锗集成。研究表明，尽管经过500°C（与应变锗外延所用温度相当）的退火处理，锗量子阱的完整性以及二维空穴气的迁移率和密度均得以保留。我们进一步在Ge/SiGe异质结上的栅极定义约瑟夫森结/超导量子干涉器件（SQUID）中，实现了掩埋锗量子阱的近邻效应。
英文摘要
Hybrid superconductor-semiconductor systems provide a versatile platform for quantum technologies, ranging from superconducting-spin interfaces to topological quantum devices. Progress toward scalable implementations requires superconductors that exhibit high critical fields ($>1$T) at accessible temperatures integrated with low-disorder semiconductor heterostructures. Here we demonstrate a superconducting platinum iridium germanosilicide (PtIrSiGe), with critical out-of-plane magnetic field up to $B_{\perp} = 1.9$T and critical temperature of $T_c\sim 1.85$K, integrated with planar germanium with mobility $μ= 1.3\times 10^6$cm$^{2}$/Vs via top-down lithography fabrication. We show that the integrity of the germanium quantum well and mobility and density of the 2D hole gas are preserved despite annealing at $500°$C, a temperature comparable to that used for strained germanium epitaxy. We further demonstrate proximitisation of a buried germanium quantum well in a gate-defined Josephson junction/SQUID on a Ge/SiGe heterostructure.
