arXivDaily arXiv每日学术速递 周一至周五更新
arXiv周末暂无论文更新,休息一下吧,周末愉快~~
arXiv 2007.12403cond-mat.mes-hall
收藏

用于高频热发射的半导体量子等离子体激元

Semiconductor quantum plasmons for high frequency thermal emission

Angela Vasanelli, Yanko Todorov, Baptiste Dailly, Sébastien Cosme, Djamal Gacemi, Andrew Haky, Isabelle Sagnes, Carlo Sirtori

摘要:

重杂质半导体层中的等离子体激元是光学活性激发,其在5-15 μ m波长区域中具有由掺杂水平和有效质量设定的尖锐共振。在这里,我们表明,体积等离子体激元可以形成在掺杂层的宽度为数百纳米,而不需要的电子限制的势垒。它们与光的强相互作用使它们成为完美的吸收体,因此适合白炽灯发射。此外,通过在掺杂层中注入微波电流,我们可以调制电子气的温度。我们已经制作了高频热发射器件,并测量了高达50 MHz的白炽发射,受到我们的检测器的截止的限制。我们的理论模型很好地再现了与频率相关的热发射,该模型使我们设想了几十GHz的截止频率。

英文摘要:

Plasmons in heavily doped semiconductor layers are optically active excitations with sharp resonances in the 5-15 um wavelength region set by the doping level and the effective mass. Here we demonstrate that volume plasmons can form in doped layers of widths of hundreds of nanometers, without the need of potential barrier for electronic confinement. Their strong interaction with light makes them perfect absorber and therefore suitable for incandescent emission. Moreover, by injecting microwave current in the doped layer, we can modulate the temperature of the electron gas. We have fabricated devices for high frequency thermal emission and measured incandescent emission up to 50MHz, limited by the cutoff of our detector. The frequency dependent thermal emission is very well reproduced by our theoretical model that let us envision a frequency cutoff in the tens of GHz.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑