Si：II自组织离子束图形化过程中的纳米尺度动力学。Kr $^+$轰击
Nanoscale dynamics during self-organized ion beam patterning of Si: II. Kr$^+$ Bombardment
摘要：
尽管广泛的研究，基本的理解，自组织图案的宽束离子轰击仍然是不完整的和有争议的。理解元素半导体，特别是硅的纳米图案化，既是更广泛领域的基础，也是固有的科学和技术兴趣本身。这是一个两部分的动力学和波动动力学的自组织纳米级波纹发展硅在1千电子伏Ar $^+$（第一部分）和氪$^+$轰击的调查的第二部分。这里，发现对于Kr $^+$诱导的图案化，离子增强的粘性流弛豫基本上等于先前对于Ar $^+$图案化发现的。Kr $^+$在早期动力学中的表面曲率相关粗糙化率的大小大于Ar $^+$，定性上与侵蚀和质量再分配对初始表面不稳定性的贡献的预期一致。与Ar $^+$的情况一样，在后期阶段的波动动力学在对应于表面上的主要结构特征--波纹的长度尺度上显示出相关时间的峰值。类比是由德热内缩小液体的现象，但也指出了显着的差异。最后，它表明，散斑运动过程中的表面演变可以分析，以确定空间不均匀性的侵蚀率和表面上的波纹速度。这允许实时测量波纹运动的方向和速度，这是在FIB/SEM系统的专用环境之外测量这些基本参数的独特能力。
英文摘要：
Despite extensive study, fundamental understanding of self-organized patterning by broad-beam ion bombardment is still incomplete and controversial. Understanding the nanopatterning of elemental semiconductors, particularly silicon, is both foundational for the broader field and of intrinsic scientific and technological interest itself. This is the second component of a two-part investigation of the kinetics and fluctuation dynamics of self-organized nanoscale ripple development on silicon during 1 keV Ar$^+$ (Part I) and Kr$^+$ bombardment. Here, it's found that the ion-enhanced viscous flow relaxation is essentially equal for Kr$^+$-induced patterning as previously found for Ar$^+$ patterning. The magnitude of the surface curvature dependent roughening rate in the early stage kinetics is larger for Kr$^+$ than for Ar$^+$, qualitatively consistent with expectations for erosive and mass redistributive contributions to the initial surface instability. As with the Ar$^+$ case, fluctuation dynamics in the late stage show a peak in correlation time at the length scale corresponding to the dominant structural feature on the surface -- the ripples. Analogy is made to the phenomenon of de Gennes narrowing in liquids, but significant differences are also pointed out. Finally, it's shown that speckle motion during the surface evolution can be analyzed to determine spatial inhomogeneities in erosion rate and ripple velocity on the surface. This allows the direction and speed of ripple motion to be measured in real time, a unique capability for measuring these fundamental parameters outside the specialized environment of FIB/SEM systems.
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