arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 2007.12253cond-mat.mtrl-sci
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自组织离子束图形化Si:I的纳米尺度动力学。Ar $^+$轰击

Nanoscale dynamics during self-organized ion beam patterning of Si: I. Ar$^+$ Bombardment

Peco Myint, Karl F. Ludwig, Lutz Wiegart, Yugang Zhang, Andrei Fluerasu, Xiaozhi Zhang, Randall L. Headrick

摘要:

采用小角X射线相干掠入射散射技术研究了65 $^{\circ}$极角的Ar-$^{\circ}$轰击硅自组织纳米图案化过程中的平均动力学和涨落动力学。在早期,表面行为可以在线性理论的框架内理解。通过强度关联函数在动力学中观察到远离线性理论行为的转变。它迅速演变为在短长度尺度上表现出拉伸指数衰减,在对应于主导结构长度尺度-波纹波长的长度尺度上表现出压缩指数衰减。相关时间也在波纹长度尺度处强烈地达到峰值。这种行为与de Gennes窄化现象有显著的相似性,但也有显著的差异。总体而言,这种动力学行为被发现是一致的非线性增长模型的模拟。

英文摘要:

Coherent grazing-incidence small-angle X-ray scattering is used to investigate the average kinetics and the fluctuation dynamics during self-organized nanopatterning of silicon by Ar$^+$ bombardment at 65$^{\circ}$ polar angle. At early times, the surface behavior can be understood within the framework of linear theory. The transition away from the linear theory behavior is observed in the dynamics through the intensity correlation function. It quickly evolves to exhibit stretched exponential decay on short length scales and compressed exponential decay on length scales corresponding the dominant structural length scale - the ripple wavelength. The correlation times also peak strongly at the ripple length scale. This behavior has notable similarities but also significant differences with the phenomenon of de Gennes narrowing. Overall, this dynamics behavior is found to be consistent with simulations of a nonlinear growth model.

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