Moiré induced electronic structure modifications in monolayer V$_{2}$S$_{3}$ on Au(111)
Umut Kamber, Sahar Pakdel, Raluca-Maria Stan, Anand Kamlapure, Brian Kiraly, Fabian Arnold, Andreas Eich, Arlette S. Ngankeu, Marco Bianchi, Jill A. Miwa, Charl… 展开作者
Umut Kamber, Sahar Pakdel, Raluca-Maria Stan, Anand Kamlapure, Brian Kiraly, Fabian Arnold, Andreas Eich, Arlette S. Ngankeu, Marco Bianchi, Jill A. Miwa, Charlotte E. Sanders, Nicola Lanatà, Philip Hofmann, Alexander A. Khajetoorians
There is immense interest in how the local environment influences the electronic structure of materials at the single layer limit. We characterize moiré induced spatial variations in the electronic structure of in-situ grown monolayer V2S3 on Au(111) by means of low temperature scanning tunneling microscopy and spectroscopy. We observe a long-range modulation of the integrated local density of states (LDOS), and quantify this modulation with respect to the moiré superstructure for multiple orientations of the monolayer with respect to the substrate. Scanning tunneling spectroscopy reveals a prominent peak in the LDOS, which is shifted in energy at different points of the moiré superstructure. Comparing ab initio calculations with angle-resolved photoemission, we are able to attribute this peak to bands that exhibit a large out-of-plane d-orbital character. This suggests that the moiré driven variations in the measured density of states is driven by a periodic modulation of the monolayer-substrate hybridization.
Remote Moiré Modulation of Decoupled Dirac Subsystems in Twisted Trilayer Graphene
Daegu Gyeongbuk Institute of Science and Technology (DGIST)（大邱庆北科学技术院）；National Institute for Materials Science（国立材料研究所）；Korea Advanced Institute of Science and Technology（韩国科学技术院）；Institute for Basic Science（基础科学研究院）
Modulation of charge density waves in a twisted vortex moire superlattice
Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences（中国科学院物理研究所，北京凝聚态物理国家研究中心）；School of Physical Sciences, University of Chinese Academy of Sciences（中国科学院大学物理科学学院）；Key Laboratory of advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology（北京理工大学物理学院，先进光电子量子架构与测量教育部重点实验室）；International Center for Quantum Materials, Beijing Institute of Technology（北京理工大学量子材料国际中心）
Electronic procrystalline state in moire structures
Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences（中国科学院物理研究所北京凝聚态物理国家研究中心）；School of Physical Sciences, University of Chinese Academy of Sciences（中国科学院大学物理科学学院）；Hefei National Laboratory（合肥国家实验室）；State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing（北京科技大学先进金属材料国家重点实验室）；New Cornerstone Science Laboratory, Department of Physics, The University of Hong Kong（香港大学物理系新基石科学实验室）；Department of Physics, Boston College（波士顿学院物理系）
Laboratoire de Physique des Solides, Université Paris-Saclay, CNRS（巴黎萨克雷大学固体物理实验室，法国国家科学研究中心）；O. Ya. Usikov Institute for Radiophysics and Electronics, National Academy of Sciences of Ukraine（乌克兰国家科学院O.Ya.尤西科夫无线电物理与电子研究所）；Research Center for Electronic and Optical Materials, National Institute for Materials Science（国立材料研究所电子与光学材料研究中心）；International Center for Materials Nanoarchitectonics, National Institute for Materials Science（国立材料研究所国际材料纳米架构中心）；Centre de nanosciences et de nanotechnologies, Université Paris-Saclay, CNRS（巴黎萨克雷大学纳米科学与纳米技术中心，法国国家科学研究中心）
A Catalogue of Topological Moiré Bands in Twisted Semiconductors
Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences（中国科学院物理研究所与凝聚态物理北京国家实验室）；University of Chinese Academy of Sciences（中国科学院大学）；Condensed Matter Physics Data Center of Chinese Academy of Sciences（中国科学院凝聚态物理数据中心）
Electronic Reconstruction at the Quasicrystal-Moiré Crossover in Twisted Bilayer Graphene
National Cheng Kung University（国立成功大学）；Center for Quantum Frontiers of Research & Technology (QFort), National Cheng Kung University（国立成功大学量子前沿研究与技术中心）；National Taiwan University（国立台湾大学）；Center for Condensed Matter Sciences, National Taiwan University（国立台湾大学凝聚态科学中心）；Center of Atomic Initiative for New Materials, National Taiwan University（国立台湾大学原子级新材料创新中心）
Machine learning assisted high throughput prediction of moiré materials
Rutgers University（罗格斯大学）；Center for Materials Theory, Rutgers University（罗格斯大学材料理论中心）；KTH Royal Institute of Technology（瑞典皇家理工学院）；Stockholm University（斯德哥尔摩大学）；University of Connecticut（康涅狄格大学）；Flatiron Institute（平顿研究所）
Moiré-induced symmetry breaking of charge order in van der Waals heterostructures
Donostia International Physics Center (DIPC)（圣塞巴斯蒂安国际物理中心）；Institute of Theoretical Physics, University of Hamburg（汉堡大学理论物理研究所）；Department of Physics, Indian Institute of Science Education and Research Bhopal（博帕尔印度科学教育研究系物理系）；The Hamburg Centre for Ultrafast Imaging（汉堡超快成像中心）；Centro de Física de Materiales (CSIC-UPV/EHU)（材料物理中心（西班牙国家科研委员会-巴斯克国立大学/巴斯克国立理工大学））；Max Planck Institute for the Structure and Dynamics of Matter（马克斯·普朗克物质结构与动力学研究所）；Yusuf Hamied Department of Chemistry, University of Cambridge（剑桥大学尤瑟夫·哈米德化学系）；Dept. Polymers and Advanced Materials, University of the Basque Country (UPV/EHU)（巴斯克国立大学（UPV/EHU）聚合物与先进材料系）；Ikerbasque, Basque Foundation for Science（伊克拉巴斯科，巴斯克科学基金会）
