arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 2007.05903cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-elphysics.app-ph
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通过电荷转移到铁电绝缘体的人工二维极性金属

Artificial two-dimensional polar metal by charge transfer to a ferroelectric insulator

W. X. Zhou, H. J. Wu, J. Zhou, S. W. Zeng, C. J. Li, M. S. Li, R. Guo, J. X. Xiao, Z. Huang, W. M. Lv, K. Han, P. Yang, C. G. Li, Z. S. Lim, H. Wang, Y. Zhang, … 展开作者

W. X. Zhou, H. J. Wu, J. Zhou, S. W. Zeng, C. J. Li, M. S. Li, R. Guo, J. X. Xiao, Z. Huang, W. M. Lv, K. Han, P. Yang, C. G. Li, Z. S. Lim, H. Wang, Y. Zhang, S. J. Chua, K. Y. Zeng, T. Venkatesan, J. S. Chen, Y. P. Feng, S. J. Pennycook, A. Ariando

摘要:

在单一系统中集成多种特性对于电子设备的持续发展至关重要。然而,某些物理性质在本质上是相互排斥的。在这里,我们报告的两个看似相互排斥的属性-极性和二维导电性-在铁电Ba $_{0.2}$ Sr $_{0.8}$ TiO $_3$薄膜在LaAlO $_3$ /Ba $_{0.2}$ Sr $_{0.8}$ TiO $_3$界面在室温下共存。一个约3.2 nm的Ba $_{0.2}$ Sr $_{0.8}$ TiO $_3$薄膜的极性保持与二维移动载流子密度约0.05电子每晶胞。我们表明,电子重建之间的竞争导致的内置电场的LaAlO $_3$和Ba $_{0.2}$ Sr $_{0.8}$ TiO $_3$的极化是负责这种不寻常的二维导电极性相。通过电子重构在氧化物界面处利用互斥性质的一般概念可能适用于其他强相关的氧化物界面,从而为新型纳米电子学中的新功能纳米材料的应用打开窗口。

英文摘要:

Integrating multiple properties in a single system is crucial for the continuous developments in electronic devices. However, some physical properties are mutually exclusive in nature. Here, we report the coexistence of two seemingly mutually exclusive properties-polarity and two-dimensional conductivity-in ferroelectric Ba$_{0.2}$Sr$_{0.8}$TiO$_3$ thin films at the LaAlO$_3$/Ba$_{0.2}$Sr$_{0.8}$TiO$_3$ interface at room temperature. The polarity of a ~3.2 nm Ba$_{0.2}$Sr$_{0.8}$TiO$_3$ thin film is preserved with a two-dimensional mobile carrier density of ~0.05 electron per unit cell. We show that the electronic reconstruction resulting from the competition between the built-in electric field of LaAlO$_3$ and the polarization of Ba$_{0.2}$Sr$_{0.8}$TiO$_3$ is responsible for this unusual two-dimensional conducting polar phase. The general concept of exploiting mutually exclusive properties at oxide interfaces via electronic reconstruction may be applicable to other strongly-correlated oxide interfaces, thus opening windows to new functional nanoscale materials for applications in novel nanoelectronics.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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