Inorganic perovskite oxide ferroelectrics have recently generated substantial interest for photovoltaic applications; however, existing materials suffer from excessive electronic band gaps and insufficient electric polarization. The recent resurgence of hybrid perovskite ferroelectrics addresses the aforementioned deficiencies, but they are highly unstable against environmental effects and an inorganic resolution may still be optimal. Here we use first-principles calculations to design a low band gap, planar ferroelectric by leveraging the complexity of layered double perovskite oxides AA$^\prime $BB$^\prime$O$_6$. We exploit A$\ne$A$^\prime$ size mismatch, a nominally empty $d$-shell on the B-site, and A cations bearing lone-pair electrons to achieve a large ferroelectric polarization. Additionally, B$^\prime\ne$B is chosen to achieve full charge transfer and a Mott susceptible filling on the B$^\prime$-site, yielding a low band gap. These principles are illustrated in BaBiCuVO$_6$, BaBiNiVO$_6$, BaLaCuVO$_6$, and PbLaCuVO$_6$, which could be realized in layer-by-layer growth. This new class of materials could lead to stable, high-efficiency photovoltaic.
The electric field control of functional properties is a crucial goal in oxide-based electronics. Non-volatile switching between different resistivity or magnetic states in an oxide channel can be achieved through charge accumulation or depletion from an adjacent ferroelectric. However, the way in which charge distributes near the interface between the ferroelectric and the oxide remains poorly known, which limits our understanding of such switching effects. Here we use a first-of-a-kind combination of scanning transmission electron microscopy with electron energy loss spectroscopy, near-total…
Motivated from recent experiments in kappa-(BEDT-TTF)_2Cu_2(CN)_3, dielectric and magnetic properties in a dimer-Mott insulator are studied. We derive the effective Hamiltonian where the number of electron per dimer is taken to be one. Charge and magnetic structures in finite temperature are obtained by using the mean-field and Monte-Carlo methods. Magnetic and ferroelectric phases are exclusive with each other. Dielectric fluctuation is remarkable near a phase boundary between dimer-Mott phase and ferroelectric phase. Implications of the present results for kappa-(BEDT-TTF)_2Cu_2(CN)_3 are di…
Optimal materials to induce bulk photovoltaic effects should lack inversion symmetry and have an optical gap matching the energies of visible radiation. Ferroelectric perovskite oxides such as BaTiO$_3$ and PbTiO$_3$ exhibit substantial polarization and stability, but have the disadvantage of excessively large band gaps. We use both density functional theory and dynamical mean field theory calculations to design a new class of Mott multiferroics--double perovskite oxides $A_2$VFeO$_6$ ($A$=Ba, Pb, etc). While neither perovskite $A$VO$_3$ nor $A$FeO$_3$ is ferroelectric, in the double perovskit…
Standing on successful first principles predictions for new functional ferroelectric materials, a number of new ferroelectrics have been experimentally discovered. Utilizing trilinear coupling of two types of octahedron rotations, hybrid improper ferroelectricity has been theoretically predicted in ordered perovskites and the Ruddlesden-Popper compounds (Ca$_{3}$Ti$_{2}$O$_{7}$, Ca$_{3}$Mn$_{2}$O$_{7}$, and (Ca/Sr/Ba)$_{3}$(Sn/Zr/Ge)$_{2}$O$_{7}$). However, the ferroelectricity of these compounds has never been experimentally confirmed and even their polar nature has been under debate. Here we…
Understanding and controlling the motion, stability, and equilibrium configuration of ferroelectric domain walls is key for their integration into potential nanoelectronics applications, such as ferroelectric racetrack memories. Using piezoresponse force microscopy we analyse the growth and roughness of ferroelectric domains in epitaxial thin film Pb(Zr$_{0.2}$Ti$_{0.8}$)O$_3$, driven by the electric fields at straight edges of planar electrodes at two different temperatures. This device relevant geometry allows us to confirm that the domain walls are well described as 1-dimensional monoaffine…
The bulk photovoltaic effect (BPE) leads to the generation of a photocurrent from an asymmetric material. Despite drawing much attention due to its ability to generate photovoltages above the band gap ($E_g$), it is considered a weak effect due to the low generated photocurrents. Here, we show that a remarkably high photoresponse can be achieved by exploiting the BPE in simple planar BaTiO$_3$ (BTO) films, solely by tuning their fundamental ferroelectric properties via strain and growth orientation induced by epitaxial growth on different substrates. We find a non-monotonic dependence of the r…
We study the electro-optic properties of subwavelength-pitch deformed-helix ferroelectric liquid crystals (DHFLC) illuminated with unpolarized light. In the experimental setup based on the Mach-Zehnder interferometer, it was observed that the reference and the sample beams being both unpolarized produce the interference pattern which is insensitive to rotation of in-plane optical axes of the DHFLC cell. We find that the field-induced shift of the interference fringes can be described in terms of the electrically dependent Pancharatnam relative phase determined by the averaged phase shift, wher…
Understanding orbital ordered (OO) Mott insulating states lies at the heart of a consistent resolution of the colossal magneto-resistance (CMR) observed in manganites, where its melting induces a low-$T$ insulator-metal transition for $0.25 \le x\le 0.45$. Motivated thereby, we study the OO states in a planar model for bilayer manganites using DMFT and finite-size diagonalisation methods. We derive the correct OO ground states observed in manganites for $x=0,{1/2},{2/3},{3/4}$ in exact agreement with observations, including the charge-orbital-magnetic ordered stripe phases for $x>{1/2}$. These…
We study both experimentally and theoretically modulation of light in a planar aligned deformed-helix ferroelectric liquid crystal (DHFLC) cell with subwavelength helix pitch, which is also known as a short-pitch DHFLC. In our experiments, azimuthal angle of the in-plane optical axis and electrically controlled parts of the principal in-plane refractive indices were measured as a function of voltage applied across the cell. Theoretical results giving the effective optical tensor of a short-pitch DHFLC expressed in terms of the smectic tilt angle and the refractive indices of FLC are used to fi…
We present the computation of structural and polarization for a ferroelectric polymer, specifically, the beta-phase of poly(vinylidene fluoride) or (-CH$_2$-CF$_2$-)$_n$. Two structures have been described in the literature: one containing an undistorted carbon backbone (planar-zigzag) and the other containing alternatively deflected -CF$_2$- groups. Previous studies have indicated that these deflections have no significant effect on calculated elastic properties. We employ density functional theory within the generalized gradient approximation to find relaxed atomic positions for the planar-z…
Ab initio calculations of the electric polarization of correlation-driven insulating materials, namely Mott insulators, have not been possible so far. Using a combination of density functional theory and dynamical-mean-field theory we study the electric polarization of the Mott insulator Sr$_{0.5}$Ba$_{0.5}$MnO$_{3}$. We predict a ferroelectric polarization of $\simeq 16.5 μC/cm^2$ in the high temperature paramagnetic phase and recover the measured value of $\simeq 13.3 μC/cm^2$ in the low temperature antiferromagnetic phase. Our calculations reveal that the driving force for the ferroelectric…
We examine the electronic properties of newly discovered "ferroelectric" metal LiOsO$_3$ combining density-functional and dynamical mean-field theories. We show that the material is close to a Mott transition and that electronic correlations can be tuned to engineer a Mott multiferroic state in 1/1 superlattice of LiOsO$_3$ and LiNbO$_3$. We use electronic structure calculations to predict that the (LiOsO$_3$)$_1$/(LiNbO$_3$)$_1$ superlattice is a type-I multiferroic material with a ferrolectric polarization of 41.2~$μ$C cm$^{-2}$, Curie temperature of 927\,K, and Néel temperature of 671\,K. O…
We fabricated ferroelectric Bi4Ti3O12 (BiT) single crystalline thin films site-specifically substituted with LaTMO3 (TM = Al, Ti, V, Cr, Mn, Co, and Ni) on SrTiO3 substrates by pulsed laser epitaxy. When transition metals are incorporated into a certain site of the BiT, some of BiT-LaTMO3 showed a substantially decreased band gap, coming from the additional optical transition between oxygen 2p and TM 3d states. Specifically, all alloys with Mott insulators revealed a possibility of band gap reduction. Among them, BiT-LaCoO3 showed the largest band gap reduction by ~1 eV, positioning itself as …
Oxygen plays a critical role in strongly correlated transition metal oxides as crystal field effect is one of the key factors that determine the degree of localization of the valence d/f states. Based on the localization, a set of conventional mechanisms such as Mott-Hubbard, Charge-transfer and Slater were formulated to explain the antiferromagnetic and insulating (AFI) phenomena in many of these correlated systems. From the case study on LiFePO4, through density-functional calculations, we demonstrate that none of these mechanisms are strictly applicable to explain the AFI behavior when the …
Ferroelectric materials contain a switchable spontaneous polarization that persists even in the absence of an external electric field. The coexistence of ferroelectricity and metallicity in a material appears to be illusive, since polarization is ill-defined in metals, where the itinerant electrons are expected to screen the long-range dipole interactions necessary for dipole ordering. The surprising discovery of the polar metal, LiOsO3 has generated interest in searching for new polar metals motivated by the prospects of exotic quantum phenomena such as unconventional pairing mechanisms givin…
Heterointerfaces in complex oxide systems open new arenas in which to test models of strongly correlated material, explore the role of dimensionality in metal-insulator-transitions (MITs) and small polaron formation. Close to the quantum critical point Mott MITs depend on band filling controlled by random disordered substitutional doping. Delta-doped Mott insulators are potentially free of random disorder and introduce a new arena in which to explore the effect of electron correlations and dimensionality. Epitaxial films of the prototypical Mott insulator GdTiO3 are delta-doped by substituting…
Rewritable nanoelectronics offers new perspectives and potential to both fundamental research and technological applications. Such interest has driven the research focus into conducting domain walls: pseudo 2D conducting channels that can be created, positioned, and deleted in situ. However, the study of conductive domain walls is largely limited to wide-gap ferroelectrics, where the conductivity typically arises from changes in charge carrier density, due to screening charge accumulation at polar discontinuities. This work shows that, in narrow-gap correlated insulators with strong charge lat…
Fabricating complex transition metal oxides with a tuneable band gap without compromising their intriguing physical properties is a longstanding challenge. Here we examine the layered ferroelectric bismuth titanate and demonstrate that, by site-specific substitution with the Mott insulator lanthanum cobaltite, its band gap can be narrowed as much as one electron volt, while remaining strongly ferroelectric. We find that when a specific site in the host material is preferentially substituted, a split-off state responsible for the band gap reduction is created just below the conduction band of b…
Recently, electrically conducting heterointerfaces between dissimilar band-insulators (such as lanthanum aluminate and strontium titanate) have attracted considerable research interest. Charge transport has been thoroughly explored and fundamental aspects of conduction firmly established. Perhaps surprisingly, similar insights into conceptually much simpler conducting homointerfaces, such as the domain walls that separate regions of different orientations of electrical polarisation within the same ferroelectric band-insulator, are not nearly so well-developed. Addressing this disparity, we her…
Resistive-switching -- the current-/voltage-induced electrical resistance change -- is at the core of memristive devices, which play an essential role in the emerging field of neuromorphic computing. This study is about resistive switching in a Mott-insulator, which undergoes a thermally driven metal-to-insulator transition. Two distinct switching mechanisms were reported for such a system: electric-field-driven resistive switching and electrothermal resistive switching. The latter results from an instability caused by Joule heating. Here, we present the visualization of the reversible resisti…
Double perovskite Bi$_2$FeCrO$_6$, related with BiFeO$_3$, is very interesting because strong ferroelectricity and high magnetic Curie temperature beyond room temperature are observed in it. However, existing density-functional-theory (DFT) studies, using pseudo-potentials, produce metallic ground state under the local density approximation (LDA) and need LDA+U method to yield needed nonmetallic ground state, resulting in low magnetic Curie temperature (below 130 K). Here, we optimize its crystal structure and then investigate its electronic structure and magnetic and optical properties by com…
Photoinduced phase switching at a Mott insulator-to-metal transition
Max Planck Institute for Solid State Research（马克斯·普朗克固体研究所）；Institute for Beam Physics and Technology, Karlsruhe Institute of Technology（卡尔斯鲁厄理工学院束流物理与技术研究所）
Perovskite oxides form an eclectic class of materials owing to their structural flexibility in accommodating cations of different sizes and valences. They host well known point and planar defects, but so far no line defect has been identified other than dislocations. Using analytical scanning transmission electron microscopy (STEM) and ab initio calculations we have detected and characterized the atomic and electronic structures of a novel line defect in NdTiO3 perovskite. It appears in STEM images as a perovskite cell rotated by 45 degrees. It consists of self-organized Ti-O vacancy lines rep…
With the motive of unraveling the origin of native vacancy induced magnetization in ferroelectric perovskite oxide systems, here we explore the consequences of electronic structure modification in magnetic ordering of oxygen deficient epitaxial BaTiO$_{3-δ}$ thin films. Our adapted methodology employs state-of-the-art experimental approaches viz. photo-emission, photo-absorption spectroscopies, magnetometric measurements duly combined with first principles based theoretical methods within the frame work of density functional theory (DFT and DFT+\textit{U}) calculations. Oxygen vacancy (O$ _{V}…
The performance of organometallic perovskite solar cells has rapidly surpassed that of both conventional dye-sensitised and organic photovoltaics. High power conversion efficiency can be realised in both mesoporous and thin-film device architectures. We address the origin of this success in the context of the materials chemistry and physics of the bulk perovskite as described by electronic structure calculations. In addition to the basic optoelectronic properties essential for an efficient photovoltaic device (spectrally suitable band gap, high optical absorption, low carrier effective masses)…
