Time resolution and power consumption of a monolithic silicon pixel prototype in SiGe BiCMOS technology

A Novel Low Power UWB Cascode SiGe BiCMOS LNA with Current Reuse and Zero-Pole Cancellation

A low power cascode SiGe BiCMOS low noise amplifier (LNA) with current reuse and zero-pole cancellation is presented for ultra-wideband (UWB) application. The LNA is composed of cascode input stage and common emitter (CE) output stage with dual loop feedbacks. The novel cascode-CE current reuse topology replaces the traditional two stages topology so as to obtain low power consumption. The emitter degenerative inductor in input stage is adopted to achieve good input impedance matching and noise performance. The two poles are introduced by the emitter inductor, which will degrade the gain perfo…

使用飞秒激光研究无内部增益层SiGe BiCMOS单片硅像素探测器的时间分辨率

Time Resolution of a SiGe BiCMOS Monolithic Silicon Pixel Detector without Internal Gain Layer with a Femtosecond Laser

本研究利用飞秒激光评估MONOLITH项目单片硅像素探测器的时间分辨率，在2.7 W/cm2功率下对1200和11k电子信号分别测得45 ps和3 ps，并与束流测试对比分析电荷收集抖动。

面向海洋世界探索的仅使用PMOS和HBT的SiGe BiCMOS电路设计方法

SiGe BiCMOS Circuit Design using only PMOS and HBTs Approach for the Ocean Worlds Exploration

本文提出一种仅使用PMOS和HBT器件的SiGe BiCMOS电路设计方法，用于解决海洋世界探索中电子系统在极低温和强辐射极端环境下的可靠运行问题。

无内部增益层的辐照后SiGe BiCMOS单片硅像素探测器的试验束测试结果

Testbeam results of irradiated SiGe BiCMOS monolithic silicon pixel detector without internal gain layer

本研究对MONOLITH项目的SiGe BiCMOS单片硅像素ASIC原型开展辐照试验与束流测试，测量了不同偏压下探测效率、时间分辨率随质子注量的变化，验证了提升偏压可改善辐照后器件性能。

无内部增益层SiGe BiCMOS单片硅像素探测器的辐射容限

Radiation Tolerance of SiGe BiCMOS Monolithic Silicon Pixel Detectors without Internal Gain Layer

研究MONOLITH项目无内部增益层SiGe BiCMOS单片硅像素探测器在质子辐照下的性能，证实其在1e16 n_eq/cm^2通量下仍保持良好信噪比与低时间抖动。

Test beam measurement of the first prototype of the fast silicon pixel monolithic detector for the TT-PET project

The TT-PET collaboration is developing a PET scanner for small animals with 30 ps time-of-flight resolution and sub-millimetre 3D detection granularity. The sensitive element of the scanner is a monolithic silicon pixel detector based on state-of-the-art SiGe BiCMOS technology. The first ASIC prototype for the TT-PET was produced and tested in the laboratory and with minimum ionizing particles. The electronics exhibit an equivalent noise charge below 600 e- RMS and a pulse rise time of less than 2 ns, in accordance with the simulations. The pixels with a capacitance of 0.8 pF were measured to …

Characterization of the demonstrator of the fast silicon monolithic ASIC for the TT-PET project

The TT-PET collaboration is developing a small animal TOF-PET scanner based on monolithic silicon pixel sensors in SiGe BiCMOS technology. The demonstrator chip, a small-scale version of the final detector ASIC, consists of a 3 x 10 pixel matrix integrated with the front-end, a 50 ps binning TDC and read out logic. The chip, thinned down to 100 μm and backside metallized, was operated at a voltage of 180 V. The tests on a beam line of minimum ionizing particles show a detection efficiency greater than 99.9 % and a time resolution down to 110 ps.

A monolithic ASIC demonstrator for the Thin Time-of-Flight PET scanner

Time-of-flight measurement is an important advancement in PET scanners to improve image reconstruction with a lower delivered radiation dose. This article describes the monolithic ASIC for the TT-PET project, a novel idea for a high-precision PET scanner for small animals. The chip uses a SiGe Bi-CMOS process for timing measurements, integrating a fully-depleted pixel matrix with a low-power BJT-based front-end per channel, integrated on the same 100 $μ m$ thick die. The target timing resolution is 30 ps RMS for electrons from the conversion of 511 keV photons. A novel synchronization scheme u…

LHC FASER 实验中用于探测 TeV 能量电磁簇射的生产型单片硅像素探测器 ASIC 的初步性能评估与校准技术

Initial performance assessment and calibration techniques of the production monolithic silicon pixel detector ASIC for the detection of electromagnetic showers of TeV energy in the FASER experiment at the LHC

FASER 实验开发了 W-Si 预簇射探测器以区分 TeV 量级紧密光子对，对基于 130 nm SiGe BiCMOS 技术的生产型单片硅像素 ASIC 的测试表明其核心组件运行正常，并提出了两种利用 ADC 值重建电荷的校准方法。

无内部增益层的全高效单片硅像素探测器实现20 ps时间分辨率

20 ps Time Resolution with a Fully-Efficient Monolithic Silicon Pixel Detector without Internal Gain Layer

本文提出MONOLITH项目第二款无内部增益层的单片硅像素探测器原型，通过优化传感器与SiGe HBT前端电子学的时间性能，在130 V偏置平台下实现99.8%效率和20 ps时间分辨率。

Testbeam Results of the Picosecond Avalanche Detector Proof-Of-Concept Prototype

The proof-of-concept prototype of the Picosecond Avalanche Detector, a multi-PN junction monolithic silicon detector with continuous gain layer deep in the sensor depleted region, was tested with a beam of 180 GeV pions at the CERN SPS. The prototype features low noise and fast SiGe BiCMOS frontend electronics and hexagonal pixels with 100 μm pitch. At a sensor bias voltage of 125 V, the detector provides full efficiency and average time resolution of 30, 25 and 17 ps in the overall pixel area for a power consumption of 0.4, 0.9 and 2.7 W/cm^2, respectively. In this first prototype the time re…

Picosecond Avalanche Detector -- working principle and gain measurement with a proof-of-concept prototype

The Picosecond Avalanche Detector is a multi-junction silicon pixel detector based on a $\mathrm{(NP)_{drift}(NP)_{gain}}$ structure, devised to enable charged-particle tracking with high spatial resolution and picosecond time-stamp capability. It uses a continuous junction deep inside the sensor volume to amplify the primary charge produced by ionizing radiation in a thin absorption layer. The signal is then induced by the secondary charges moving inside a thicker drift region. A proof-of-concept monolithic prototype, consisting of a matrix of hexagonal pixels with 100 $μ$m pitch, has been pr…

Multi-Gigabit Wireless data transfer at 60 GHz

In this paper we describe the status of the first prototype of the 60 GHz wireless Multi-gigabit data transfer topology currently under development at University of Heidelberg using IBM 130 nm SiGe HBT BiCMOS technology. The 60 GHz band is very suitable for high data rate and short distance applications as for example needed in the HEP experments. The wireless transceiver consist of a transmitter and a receiver. The transmitter includes an On-Off Keying (OOK) modulator, an Local Oscillator (LO), a Power Amplifier (PA) and a BandPass Filter (BPF). The receiver part is composed of a BandPass- Fi…