Quantum technologies involving qubit measurements based on electronic interferometers rely critically on accurate single-particle emission. However, achieving precisely timed operations requires exquisite control of the single-particle sources in the time domain. Here, we demonstrate accurate control of the emission time statistics of a dynamic single-electron transistor by measuring the waiting times between emitted electrons. By ramping up the modulation frequency, we controllably drive the system through a crossover from adiabatic to nonadiabatic dynamics, which we visualize by measuring the temporal fluctuations at the single-electron level and explain using detailed theory. Our work paves the way for future technologies based on the ability to control, transmit, and detect single quanta of charge or heat in the form of electrons, photons, or phonons.
A proposal of electrically controlled spin transistor in helical magnetic field is presented. In the proposed device, the transistor action is driven by the Landau-Zener transitions that lead to a backscattering of spin polarized electrons and switching the transistor into the high-resistance state (off state). The on/off state of the transistor can be controlled by the all-electric means using Rashba spin-orbit coupling that can be tuned by the voltages applied to the side electrodes.
We report room-temperature Coulomb blockade in a single layer graphene three-terminal single-electron transistor (SET) fabricated using feedback-controlled electroburning. The small separation between the side gate electrode and the graphene quantum dot results in a gate coupling up to 3 times larger compared to the value found for the back gate electrode. This allows for an effective tuning between the conductive and Coulomb blocked state using a small side gate voltage of about 1V. The technique can potentially be used in the future to fabricate all-graphene based room temperature single-ele…
We developed the theory of spin dependent transport through a spin-modulator device (so-called Datta-and-Das spin transistor) in the presence of a high-frequency electromagnetic field (dressing field). Solving the Schrödinger problem for dressed electrons, we demonstrated that the field drastically modifies the spin transport. In particular, the dressing field leads to renormalization of spin-orbit coupling constants that varies conductivity of the spin transistor. The present effect paves the way for controlling the spin-polarized electron transport with light in prospective spin-optronic dev…
Quantum-interference-controlled three-terminal molecular transistors based on a single ring-shaped-molecule connected to graphene nanoribbon electrodes
Feedback control of quantum mechanical systems is rapidly attracting attention not only due to fundamental questions about quantum measurements but also because of its novel applications in many fields in physics. Quantum control has been studied intensively in quantum optics but recently progress has been made in the control of solid-state qubits as well. In quantum transport only a few active and passive feedback experiments have been realized on the level of single-electrons, though theoretical proposals exist. Here we demonstrate the suppression of shot noise in a single-electron transisto…
We report on an unconventional $macroscopic$ field effect transistor composed of electrons floating above the surface of superfluid helium. With this device unique transport regimes are realized in which the charge density of the electron layer can be controlled in a manner not possible in other material systems. In particular, we are able to manipulate the collective behavior of the electrons to produce a highly non-uniform, but precisely controlled, charge density to reveal a negative source-drain current. This behavior can be understood by considering the propagation of damped charge oscill…
We Have developed the concept of a new kind of single-electron transistor in which the transport of the electron through a quantum wire is controlled by charged quantum rings. Using a 2D harmonic potential as the transverse constraint, we numerically investigated the transport of the electron through the wire. We have shown that in the low energy limit, for a suitable configuration of the rings, called the quadrupole configuration, we are able to adjust the conductance of the wire and therefore control the switching process.
The continuous down-scaling of transistors has been the key to the successful development of current information technology. However, with Moore's law reaching its limits, the development of alternative transistor architectures is urgently needed. Transistors require a switching voltage of at least 60 mV for each tenfold increase in current, that is, a subthreshold swing (SS) of 60 mV per decade (dec). Alternative tunnel field-effect transistors (TFETs) are widely studied to achieve a sub-thermionic SS and high I60 (the current where SS becomes 60 mV/dec). Heterojunction (HJ) TFETs show promis…
Graphene nanoribbons (GNRs) have attracted a strong interest from researchers worldwide, as they constitute an emerging class of quantum-designed materials. The major challenges towards their exploitation in electronic applications include reliable contacting, complicated by their small size ($<$50 nm), as well as the preservation of their physical properties upon device integration. In this combined experimental and theoretical study, we report on the quantum dot (QD) behavior of atomically precise GNRs integrated in a device geometry. The devices consist of a film of aligned 5-atoms wide GNR…
We propose an approach for probing Majorana bound states (MBSs) in a nanowire via counting statistics of a nearby charge detector in the form of a single-electron transistor (SET). We consider the impacts on the counting statistics by both the local coupling between the detector and an adjacent MBS at one end of a nanowire and the nonlocal coupling to the MBS at the other end. We show that the Fano factor and the skewness of the SET current are minimized for a symmetric SET configuration in the absence of the MBSs or when coupled to a fermionic state. However, the minimum points of operation a…
Spin transistors (whose on-off operation is achieved by electric-field-controlled spin orientation 1), if realized, can revolutionize modern electronics through the implementation of a faster and a more energy-efficient performance as well as non-volatile data storage 2, 3. The original proposal by Datta and Das 1 that relies on electric-field-controlled spin precession in a semiconductor channel faces significant challenges including inefficient spin injection, spin relaxation and spread of the spin precession angle 4, 5. Recent demonstration of electric-field switching of magnetic order 6-8 …
Magnon transistors that can effectively regulate magnon transport by an electric field are desired for magnonics which aims to provide a Joule-heating free alternative to the conventional electronics owing to the electric neutrality of magnons (the key carriers of spin-angular momenta in the magnonics). However, also due to their electric neutrality, magnons have no access to directly interact with an electric field and it is thus difficult to manipulate magnon transport by voltages straightforwardly. Here, we demonstrated a gate voltage ($V_{\rm g}$) applied on a nonmagnetic metal/magnetic in…
Atomically-thin 2D semiconducting materials integrated into van der Waals heterostructures have enabled architectures that hold great promise for next generation nanoelectronics. However, challenges still remain to enable their full acceptance as compliant materials for integration in logic devices. Two key-components to master are the barriers at metal/semiconductor interfaces and the mobility of the semiconducting channel, which endow the building-blocks of ${pn}$ diode and field effect transistor. Here, we have devised a reverted stacking technique to intercalate a wrinkle-free h-BN tunnel …
We develop a conceptually simple scheme based on a master-equation approach to evaluate the full-counting statistics (FCS) of elastic and inelastic off-resonant tunneling (cotunneling) in quantum dots (QDs) and molecules. We demonstrate the method by showing that it reproduces known results for the FCS and shot noise in the cotunneling regime. For a QD with an excited state, we obtain an analytic expression for the cumulant generating function (CGF) taking into account elastic and inelastic cotunneling. From the CGF we find that the shot noise above the inelastic threshold in the cotunneling r…
Giant thermovoltage in single InAs-nanowire field-effect transistors
毫伏范围的热电压证明在单一的InAs纳米线的场效应晶体管。由于埋入式加热方案，我们驱动大的热偏压DT> 10 K和纳米结构上的电导的强场效应调制。这使得精确映射的Seebeck系数S的演变作为室温和100 K $之间的门控电导率的函数。基于这些实验数据的电子迁移率的一个新的估计。这个值进行了比较，与标准的场效应为基础的迁移率估计的结果和讨论有关的设备中的电荷陷阱的效果。
Monolayer molybdenum disulfide (MoS$_2$) nanosheets, obtained via chemical vapor deposition onto SiO$_2$/Si substrates, are exploited to fabricate field-effect transistors with n-type conduction, high on/off ratio, steep subthreshold slope and good mobility. The transistor channel conductance increases with the reducing air pressure due to oxygen and water desorption. Local field emission measurements from the edges of the MoS$_2$ nanosheets are performed in high vacuum using a tip-shaped anode. It is demonstrated that the voltage applied to the Si substrate back-gate modulates the field emiss…
In a family of experiments carried on all-metallic supercurrent nano-transistors a surprising gating effect has been recently shown. These include the full suppression of the critical supercurrent, the increase of quasiparticle population, the manipulation of the superconducting phase, and the broadening of the switching current distributions. Aside from the high potential for future applications, these findings raised fundamental questions on the origin of these phenomena. To date, two complementary hypotheses are under debate: an electrostatically-triggered orbital polarization at the superc…
We study a three-terminal setup consisting of a single-level quantum dot capacitively coupled to a quantum point contact. The point contact connects to a source and drain reservoirs while the quantum dot is coupled to a single base reservoir. This setup has been used to implement a noninvasive, nanoscale thermometer for the bath reservoir by detecting the current in the quantum point contact. Here, we demonstrate that the device can also be operated as a thermal transistor where the average (charge and heat) current through the quantum point contact is controlled via the temperature of the bas…
We report the first observation of gate-controlled field emission current from a tungsten diselenide (WSe2) monolayer, synthesized by chemical-vapour deposition on SiO2/Si substrate. Ni contacted WSe2 monolayer back-gated transistors, under high vacuum, exhibit n-type conduction and drain-bias dependent transfer characteristics, which are attributed to oxygen/water desorption and drain induced Schottky barrier lowering, respectively. The gate-tuned n-type conduction enables field emission, i.e. the extraction of electrons by quantum tunnelling, even from the flat part of the WSe2 monolayers. E…
Bottom-up assembled nanomaterials and nanostructures allow for the studies of rich and unprecedented quantum-related and mesoscopic transport phenomena. However, it can be difficult to quantify the correlations between the geometrical or structural parameters obtained from advanced microscopy and measured electrical characteristics when they are made into macroscopic devices. Here, we propose a strategy to connect the nanomaterial morphologies and the device performance through a Monte Carlo device model and apply it to understand the scaling trends of bottom-up synthesized armchair graphene n…
We describe a method to fabricate clean suspended single-wall carbon nanotube (SWCNT) transistors hosting a single quantum dot ranging in length from a few 10s of nm down to $\approx$ 3 nm. We first align narrow gold bow-tie junctions on top of individual SWCNTs and suspend the devices. We then use a feedback-controlled electromigration to break the gold junctions and expose nm-sized sections of SWCNTs. We measure electron transport in these devices at low temperature and show that they form clean and tunable single-electron transistors. These ultra-short suspended transistors offer the prospe…
