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arXiv 2004.06876cond-mat.mtrl-sci
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螺旋位错使p型GaN转变为n型:p-n二极管中Mg凝聚和漏电流的微观研究

Screw dislocation that converts p-type GaN to n-type: Microscopic study on the Mg condensation and the leakage current in p-n diodes

Takashi Nakano, Yosuke Harashima, Kenta Chokawa, Kenji Shiraishi, Atsushi Oshiyama, Yoshihiro Kangawa, Shigeyoshi Usami, Norihito Mayama, Kazuya Toda, Atsushi T… 展开作者

Takashi Nakano, Yosuke Harashima, Kenta Chokawa, Kenji Shiraishi, Atsushi Oshiyama, Yoshihiro Kangawa, Shigeyoshi Usami, Norihito Mayama, Kazuya Toda, Atsushi Tanaka, Yoshio Honda, Hiroshi Amano

摘要:

最近的实验表明,Mg冷凝在线程位错诱导电流泄漏,导致GaN基功率器件的退化。为了研究这个问题,我们进行第一性原理总能量电子结构计算各种镁和位错复合物。我们发现,螺纹螺位错(TSD)确实吸引Mg杂质,和电子水平的能隙中诱导的位错被提升到导带作为Mg杂质接近位错线,表明Mg-TSD复合物是一个施主。的Mg-TSD复合物的形成是明确地证明了我们的原子探针断层扫描,其中Mg的凝聚和扩散通过[0001]螺旋位错中观察到的p-n二极管。这些发现提供了一个新的图片,镁作为一个p型杂质在GAN扩散到TSD,然后局部形成一个n型区域。该区域沿TSD的出现导致反向漏电流。

英文摘要:

Recent experiments suggest that Mg condensation at threading dislocations induce current leakage, leading to degradation of GaN-based power devices. To study this issue, we perform first-principles total-energy electronic-structure calculations for various Mg and dislocation complexes. We find that threading screw dislocations (TSDs) indeed attract Mg impurities, and that the electronic levels in the energy gap induced by the dislocations are elevated towards the conduction band as the Mg impurity approaches the dislocation line, indicating that the Mg-TSD complex is a donor. The formation of the Mg-TSD complex is unequivocally evidenced by our atom probe tomography in which Mg condensation and diffusion through [0001] screw dislocations is observed in p-n diodes. These findings provide a novel picture that the Mg being a p-type impurity in GaN diffuses toward the TSD and then locally forms an n-type region. The appearance of this region along the TSD results the reverse leakage current.

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