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arXiv 1801.09025cond-mat.mtrl-sci
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半导体螺型位错中普遍存在的理想自旋轨道耦合

Ubiquitous Ideal Spin-Orbit Coupling in a Screw Dislocation in Semiconductors

Lin Hu, Huaqing Huang, Zhengfei Wang, W. Jiang, Xiaojuan Ni, Yinong Zhou, V. Zielasek, M. G. Lagally, Bing Huang, Feng Liu

摘要:

我们从理论上证明了螺位错(SD),一种广泛存在于半导体中的一维拓扑缺陷,普遍表现出一种新形式的自旋轨道耦合(SOC)效应。与通常存在于表面/界面处的众所周知的常规2D Rashba-Dresselhaus(RD)SOC效应不同,半导体中SD-SOC状态的深能级性质容易使其成为理想的SOC。值得注意的是,与SD的固有对称性有关的1D SD-SOC的自旋织构比2D RD-SOC表现出显著更高程度的自旋相干性。此外,如Si/Ge、GaAs和SiC中SD的比较第一性原理计算所证明的,可以通过化合物半导体中的离子性来调节1D SD-SOC,以理想地抑制自旋弛豫。因此,我们的研究结果打开了一扇新的大门,操纵自旋输运的半导体利用,否则有害的拓扑缺陷。

英文摘要:

We theoretically demonstrate that screw dislocation (SD), a 1D topological defect widely present in semiconductors, exhibits ubiquitously a new form of spin-orbit coupling (SOC) effect. Differing from the widely known conventional 2D Rashba-Dresselhaus (RD) SOC effect that typically exists at surfaces/interfaces, the deep-level nature of SD-SOC states in semiconductors readily makes it an ideal SOC. Remarkably, the spin texture of 1D SD-SOC, pertaining to the inherent symmetry of SD, exhibits a significantly higher degree of spin coherency than the 2D RD-SOC. Moreover, the 1D SD-SOC can be tuned by ionicity in compound semiconductors to ideally suppress spin relaxation, as demonstrated by comparative first-principles calculations of SDs in Si/Ge, GaAs, and SiC. Our findings therefore open a new door to manipulating spin transport in semiconductors by taking advantage of an otherwise detrimental topological defect.

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