We employ density-functional-theory calculations to analyze the interactions between oxygen interstitial atoms and <a>-type screw dislocations (<a> = a<11-20>/3 ) in alpha-titanium, based on investigations of generalized stacking fault (GSF) energies, dislocation core structures and the strain field of an oxygen interstitial. Compared with the substitutional atoms such as Al, there is a large repulsive interaction between oxygen interstitials at the octahedral site and an <a>-type screw dislocation core, since the volume for the interstitial atom between Ti lattice sites is largely reduced in the core. Differential displacement maps and distributions of interstitial volume surrounding the dislocation core show that the interaction with an oxygen interstitial is very short ranged (~ 5 Angstrom) and directional, mainly located on the prismatic plane where the majority of lattice displacements in the <a> screw dislocation core occurs. At long distances the interactions mediated by the strain from the interstitial oxygen and the dislocation vanish. We show that the large repulsive interaction at short range can push an oxygen atom from its original interstitial site to a new interstitial site on the basal plane in the dislocation core. The strong repulsive interaction and the mechanical shuffle of oxygen interstitials can be expected to have a large impact on dislocation dynamics, and can be used to explain the strong strengthening effects of oxygen impurities in alpha-titanium observed experimentally.
Basal slip of a screw dislocations in hexagonal closed-packed titanium is investigated with ab initio calculations. We show that a basal dissociation is highly unstable and reconfigures to other structures dissociated in a first order pyramidal plane. The obtained mechanism for basal slip corresponds to the migration of the partial dislocations and of the associated stacking fault ribbon in a direction perpendicular to the dissocia-tion plane. Presented results indicate that both basal and pyramidal slip will operate through the Peierls mechanism of double-kink nucleation and will be equally a…
Basal slip acts as a secondary deformation mode in hexagonal close-packed titanium and becomes one of the primary mechanisms in titanium alloyed with simple metals. As these solute elements also lead to a pronounced reduction of the energy of the basal stacking fault, one can hypothesize that they promote basal dissociation of dislocations which can then easily glide in the basal planes. Here, we verify the validity of this hypothesis using ab initio calculations to model the interaction of a screw dislocation with indium (In) and tin (Sn). These calculations confirm that these simple metals a…
The interaction between screw dislocations and oxygen interstitial atoms is studied with ab initio calculations in hexagonal close-packed titanium. Our calculations evidence a strong repulsion when the solute atoms are located in the dislocation glide plane, leading to spontaneous cross-slip, which allows the dislocation to bypass the atomic obstacle. This avoidance process explains several experimental observations in titanium in presence of oxygen: (1) a larger lattice friction against screw dislocation motion, (2) a reduction of the dislocation glide distance in prismatic planes and (3) an …
The high solubility of oxygen in Ti, Zr and Hf makes it difficult to stabilize the protective oxide scales on their surfaces as the subsurface regions can serve as boundless sinks that continuously dissolve oxygen. Alloying elements are crucial to reduce the oxygen solubility and diffusivity within early transition metals. Past studies have shown that substitutional alloying additions to titanium repel interstitial oxygen. Here we use first-principles calculations to show that this repulsion is short ranged and identify a variety of factors that are likely responsible for the repulsive interac…
Plasticity in zirconium alloys is mainly controlled by the interaction of 1/3 1210 screw dislocations with oxygen atoms in interstitial octahedral sites of the hexagonal close-packed lattice. This process is studied here using ab initio calculations based on the density functional theory. The atomic simulations show that a strong repulsion exists only when the O atoms lie in the dislocation core and belong to the prismatic dislocation habit plane. This is a consequence of the destruction of the octahedral sites by the stacking fault arising from the dislocation dissociation. Because of the rep…
