Fabrication process and failure analysis for robust quantum dots in silicon
J. P. Dodson, Nathan Holman, Brandur Thorgrimsson, Samuel F. Neyens, E. R. MacQuarrie, Thomas McJunkin, Ryan H. Foote, L. F. Edge, S. N. Coppersmith, M. A. Eriksson
We present an improved fabrication process for overlapping aluminum gate quantum dot devices on Si/SiGe heterostructures that incorporates low-temperature inter-gate oxidation, thermal annealing of gate oxide, on-chip electrostatic discharge (ESD) protection, and an optimized interconnect process for thermal budget considerations. This process reduces gate-to-gate leakage, damage from ESD, dewetting of aluminum, and formation of undesired alloys in device interconnects. Additionally, cross-sectional scanning transmission electron microscopy (STEM) images elucidate gate electrode morphology in the active region as device geometry is varied. We show that overlapping aluminum gate layers homogeneously conform to the topology beneath them, independent of gate geometry, and identify critical dimensions in the gate geometry where pattern transfer becomes non-ideal, causing device failure.
Nanofabrication techniques for superconducting qubits rely on resist-based masks patterned by electron-beam or optical lithography. We have developed an alternative nanofabrication technique based on free-standing silicon shadow masks fabricated from silicon-on-insulator wafers. These silicon shadow masks not only eliminate organic residues associated with resist-based lithography, but also provide a pathway to better understand and control surface-dielectric losses in superconducting qubits by decoupling mask fabrication from substrate preparation. We have successfully fabricated aluminum 3D …
Perturbations to the effective refractive index from nanometer-scale fabrication variations in waveguide geometry plague high index-contrast photonic platforms including the ubiquitous sub-micron silicon-on-insulator (SOI) process. Such variations are particularly troublesome for phase-sensitive devices such as interferometers and resonators, which exhibit drastic changes in performance as a result of these fabrication-induced phase errors. In this Letter, we propose and experimentally demonstrate a design methodology for dramatically reducing device sensitivity to silicon width variations. We…
We report fabrication of optical waveguides embedded in oxidised porous silicon in a mask-less process. Patterned pore-filling was attained by means of inkjet printing, enabling lateral modification of the waveguide's index of refraction and other optical properties thus providing full two-dimensional refractive index control of the optical waveguide. The waveguides were created by applying a KDP salt solution over a porous silicon film by means of a material printer. Light guiding was demonstrated at wavelengths 1.064 and 1.550 microns. Measured values of the intensity attenuation at these wa…
Solid-state quantum computers require classical electronics to control and readout individual qubits and to enable fast classical data processing [1-3]. Integrating both subsystems at deep cryogenic temperatures [4], where solid-state quantum processors operate best, may solve some major scaling challenges, such as system size and input/output (I/O) data management [5]. Spin qubits in silicon quantum dots (QDs) could be monolithically integrated with complementary metal-oxide-semiconductor (CMOS) electronics using very-large-scale integration (VLSI) and thus leveraging over wide manufacturing …
Silicon ring resonator-based devices, such as modulators, detectors, filters, and switches, play important roles in integrated photonic circuits for optical communication, high-performance computing, and sensing applications. However, the high sensitivity to fabrication variations has limited their volume manufacturability and commercial adoption. Here, we report a low-cost post-fabrication trimming method to tune the resonance wavelength of a silicon ring resonator and correct for fabrication variations at wafer-scale. We use a Ge implant to create an index trimmable section in the ring reson…
Nano-fabrication in silicon, arguably the most important material for modern technology, has been limited exclusively to its surface. Existing lithographic methods cannot penetrate the wafer surface without altering it, whereas emerging laser-based subsurface or in-chip fabrication remains at > 1 micrometer resolution. In addition, available methods do not allow positioning or modulation with sub-micron precision deep inside the wafer. The fundamental difficulty of breaking these dimensional barriers are two-fold, i.e., complex nonlinear effects inside the wafer and the inherent diffraction li…
A merged-element transmon (MET) device, based on silicon (Si) fins, is proposed and the first steps to form such a "FinMET" are demonstrated. This new application of fin technology capitalizes on the anisotropic etch of Si(111) relative to Si(110) to define atomically flat, high aspect ratio Si tunnel barriers with epitaxial superconductor contacts on the parallel side-wall surfaces. This process circumvents the challenges associated with the growth of low-loss insulating barriers on lattice matched superconductors. By implementing low-loss, intrinsic float-zone Si as the barrier material rath…
Increasing circuit complexity within quantum systems based on superconducting qubits necessitates high connectivity while retaining qubit coherence. Classical micro-electronic systems have addressed interconnect density challenges by using 3D integration with interposers containing through-silicon vias (TSVs), but extending these integration techniques to superconducting quantum systems is challenging. Here, we discuss our approach for realizing high-aspect-ratio superconducting TSVs\textemdash 10 $μ$m wide by 20 $μ$m long by 200 $μ$m deep\textemdash with densities of 100 electrically isolated…
Silicon-vacancy (SiV) color centers in diamond have great potential for optical sensing and bio-imaging applications. However, the fabrication of large-scale high-density SiV centers in diamond remains difficult. Here, we report a promising method for the fabrication of high-density SiV- centers in a low-cost polycrystalline diamond film grown on an inches-scale Si wafer. Our method utilizes the nucleation surface of the diamond film which initially interfaces with the Si wafer. Benefited from the diamond seeding substrate of silicon, the nucleation surface has originally been incorporated wit…
In this paper, the implementation of optical elements in the form of Pancharatnam-Berry optics is considered. With respect to 3D bulk and diffractive optics, acting on the dynamic phase of light, Pancharatnam-Berry optical elements transfer a phase which is geometric in nature by locally manipulating the polarization state of the incident beam. They can be realized as space-variant sub-wavelengths gratings that behave like inhomogeneous form-birefringent materials. We present a comprehensive work of simulation, realization, and optical characterization at the telecom wavelength of 1310 nm of t…
This work proposes new chemical and mechanical materials and techniques for III-V semiconductor NW/silicone membrane formation and optoelectronic device fabrication. Molecular beam epitaxy (MBE)-synthesized n-, p- and i-GaP NWs were encapsulated by introduced G-coating method into synthesized polydimethylsiloxane-graft-polystyrene and released from the Si growth substrate. The fabricated membranes were contacted with different materials including single-walled carbon nanotubes or ferrocenyl-containing polymethylhydrosiloxane with and without multi-walled carbon nanotubes doping. The electrical…
We present an elegant and effective technology of extending the photoresponse of Si towards the IR range. Our approach is based on the use of Ag2S quantum dots planted on the surface of Si to create impurity states in Si band gap. Given the variety of available QDs and the ease of extending the photoresponse of Si towards the IR range, our findings open a path towards the future study and development of Si detectors for technological applications. The current research at the interface of physics and chemistry is also of fundamental importance to the development of Si optoelectronics of the IR …
Metal-halide perovskites are promising lasing materials for realization of monolithically integrated laser sources, the key components of silicon photonic integrated circuits (PICs). Perovskites can be deposited from solution and require only low temperature processing leading to significant cost reduction and enabling new PIC architectures compared to state-of-the-art lasers realized through costly and inefficient hybrid integration of III-V semiconductors. Until now however, due to the chemical sensitivity of perovskites, no microfabrication process based on optical lithography and therefore…
A new method of introducing nanopores with spongy morphology during fabrication of size and pitch controlled flexible silicon microwires (SiMWs) in wafer scale is presented using nanosphere lithography technique in addition to metal catalyzed electroless etching technique by varying concentration of oxidant and introducing surfactant or co-solvents to the etching solution. For achieving self-assembled monolayer closed-pack pattern of SiO2 microparticles in wafer-scale simple spin coating process was used. The effect of variation of the etchant, oxidant and surfactant on the morphology and opti…
Many biological materials exhibit a multiscale porosity with small, mostly nanoscale pores as well as large, macroscopic capillaries to simultaneously achieve optimized mass transport capabilities and lightweight structures with large inner surfaces. Realizing such a hierarchical porosity in artificial materials necessitates often sophisticated and expensive top-down processing that limits scalability. Here we present an approach that combines self-organized porosity based on metal-assisted chemical etching (MACE) with photolithographically induced macroporosity for the synthesis of single-cry…
Low-loss photonic integrated circuits (PIC) and microresonators have enabled novel applications ranging from narrow-linewidth lasers, microwave photonics, to chip-scale optical frequency combs and quantum frequency conversion. To translate these results into a widespread technology, attaining ultralow optical losses with established foundry manufacturing is critical. Recent advances in fabrication of integrated Si3N4 photonics have shown that ultralow-loss, dispersion-engineered microresonators can be attained at die-level throughput. For emerging nonlinear applications such as integrated trav…
The present work critically investigates the influence of low melting glasses on the fabrication of metal contacts, with the goal of advancing applications of bismuth based oxide glass and screen printed silver contacts for use in integrated circuits (ICs), solar cells, and sensors. In this study, novel electrode contacts were fabricated by screen printing composite pastes composed of mainly silver powder, Bi2O3 glass powder, and acyclic binder, and then firing the pastes in a belt furnace. The microstructures of the composite films after firing at 830 to 890 °C were observed under different c…
CMUT technology was invented and has been widely researched on silicon substrates. In recent years, fabrication of CMUT on glass substrates has raised significant interests because a number of advantages it can offer. First, parasitic capacitance could be easily reduced since glass is an insulating material. Second, insulation steps required in the silicon-based CMUT fabrication process could be avoided, leading to a reduced fabrication complexity. Third, anodic bonding can be used when the substrate is borosilicate glass, which is a low-temperature bonding technique and has a high tolerance t…
A micro-pressure sensor with an isosceles trapezoidal beam-membrane (ITBM) is proposed in this paper, consisting of a square silicon membrane, four isosceles trapezoidal beams and four piezoresistors.To investigate how the elastic silicon membrane affects pressure sensitive characteristics, a simulation models based on ANSYS 15.0 software were used to analyze the effect of structural dimension on characteristics of pressure sensor. According to that, the chips of micro-pressure sensors were fabricated by micro-electro-mechanical system (MEMS) technology on a silicon wafer with <100> orientatio…
We present design, fabrication and characterization of a MEMS VCSEL which utilizes a silicon-on-insulator wafer for the microelectromechanical system and encapsulates the MEMS by direct InP wafer bonding, which improves the protection and control of the tuning element. This procedure enables a more robust fabrication, a larger free spectral range and facilitates bidirectional tuning of the MEMS element. The MEMS VCSEL device uses a high contrast grating mirror on a MEMS stage as the bottom mirror, a wafer bonded InP with quantum wells for amplification and a deposited dielectric DBR as the top…
Metal microstructured optical elements for grating-based X-ray phase-contrast interferometry were fabricated by using an innovative approach of microcasting: hot embossing technology with low melting temperature (280°C) metal alloy foils and silicon etched templates. A gold-tin alloy (80w%Au / 20w%Sn) was used to cast micro-gratings with pitch sizes in the range of 2 to 20 micrometers and depth of the structures up to 80 micrometers. The metal filling of the silicon template strongly depends on the wetting properties of the liquid metal on the groove surface. A thin metal wetting layer (20 nm …
Light trapping photonic crystal (PhC) patterns on the surface of Si solar cells provides a novel opportunity to approach the theoretical efficiency limit of 32.3%, for light-to-electrical power conversion with a single junction cell. This is beyond the efficiency limit implied by the Lambertian limit of ray trapping 29%. The interference and slow light effects are harnessed for collecting light even at the long wavelengths near the Si band-gap. We compare two different methods for surface patterning, that can be extended to large area surface patterning: 1) laser direct write and 2) step-&-rep…
