Using scanning tunneling spectroscopy we have studied the effects of nitrogen gas exposure on the bismuth selenide density of states. We observe a shift in the Dirac point which is qualitatively consistent with theoretical modeling of nitrogen binding to selenium vacancies. In carefully controlled measurements, Bi$_2$Se$_3$ crystals were initially cleaved in a helium gas environment and then exposed to a 22 SCFH flow of ultra-high purity N$_2$ gas. We observe a resulting change in the spectral curves, with the exposure effect saturating after approximately 50 minutes, ultimately bringing the Dirac point about 50 meV closer to the Fermi level. These results are compared to density functional theoretical calculations, which support a picture of $N_2$ molecules physisorbing near Se vacancies and dissociating into individual N atoms which then bind strongly to Se vacancies. In this interpretation, the binding of the N atom to a Se vacancy site removes the surface defect state created by the vacancy and changes the position of the Fermi energy with respect to the Dirac point.
In this paper, we have analysed the electronic and mechanical properties of Nitrogen(N) doped (6,1) SWCNTs based on first-principles and Molecular dynamic (MD) simulation. A schematic N-doping on SWCNT was performed along zigzag(zz) and armchair(ac) direction. Armchair doping is considered parallel to the tube axis while the zigzag is along the cross-section perpendicular to the tube axis. In doping pattern (both zz and ac) we have observed the variation in electronic properties for even number of N-doping and odd number of N-doping. To study the mechanical properties we have adopted ab-initio…
Nitrogen doped single wall carbon nanotubes have many functional benefits. Doping opens the possibility to control the electronic energy levels, surface energy, surface reactivity and charge carrier density. The additional electron in the outer shell changes the electronic properties of the nanotubes when introduced into the carbon lattice. Here we present the latest findings in the in-situ doping during synthesis of single wall carbon nanotubes using caffeine as a precursor of both carbon and nitrogen. A special furnace with two heating elements allowed us to sublimate and decompose the solid…
Sulfur and nitrogen dual doped graphene have been extensively investigated in the field of oxygen reduction reaction, supercapacitors and batteries, but their magnetic and absorption performance have not been explored. Besides, the effects of doping sequence of sulfur and nitrogen atoms on the morphology, structural property and the corresponding microwave absorption performance of the dual doped graphene remain unexplored. In this work, nitrogen and sulfur dual doped graphene with different doping sequence were successfully prepared using a controllable two steps facile thermal treatment meth…
Nitrogen doping induced metal-insulator transition with iso-symmetric character in rutile VO2
Harbin Institute of Technology, Shenzhen（哈尔滨工业大学（深圳））；Minjiang University（闽江大学）；Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area（粤港澳大湾区量子科学中心）；University of Science and Technology Beijing（北京科技大学）；Helmholtz-Zentrum Dresden – Rossendorf（德累斯顿罗森多夫亥姆霍兹中心）；University of Science and Technology of China（中国科学技术大学）；Soochow University（苏州大学）；National Yang Ming Chiao Tung University（国立阳明交通大学）；Indian Institute of Science（印度科学学院）；The School of Integrated Circuit, Harbin Institute of Technology, Shenzhen（哈尔滨工业大学（深圳）集成电路学院）；Max-Planck Institute for Chemical Physics of Solids（马克斯·普朗克固体化学物理研究所）；National Synchrotron Radiation Research Center（国家同步辐射研究中心）；Nanyang Technological University（南洋理工大学）
Deuterium diffusion is investigated in nitrogen-doped homoepitaxial ZnO layers. The samples were grown under slightly Zn-rich growth conditions by plasma-assisted molecular beam epitaxy on m-plane ZnO substrates and have a nitrogen content [N] varied up to 5x1018 at.cm-3 as measured by secondary ion mass spectrometry (SIMS). All were exposed to a radio-frequency deuterium plasma during 1h at room temperature. Deuterium diffusion is observed in all epilayers while its penetration depth decreases as the nitrogen concentration increases. This is a strong evidence of a diffusion mechanism limited …
It has been reported that conversion yield and coherence time of ion-implanted NV centers improve if the Fermi level is raised or lowered during the annealing step following implantation. Here we investigate whether surface transfer doping and surface charging, by UV light, can be harnessed to induce this effect. We analyze the coherence times and the yield of NV centers created by ion implantation and annealing, applying various conditions during annealing. Specifically, we study coating the diamond with nickel, palladium or aluminum oxide, to induce positive surface transfer doping, as well …
This study reports on the properties of nitrogen doped titanium dioxide $TiO_2$ thin films considering the application as transparent conducting oxide (TCO). Sets of thin films were prepared by sputtering a titanium target under oxygen atmosphere on a quartz substrate at 400 or 500°C. Films were then doped at the same temperature by 150 eV nitrogen ions. The films were prepared in Anatase phase which was maintained after doping. Up to 30at% nitrogen concentration was obtained at the surface, as determined by in situ x-ray photoelectron spectroscopy (XPS). Such high nitrogen concentration at th…
Using Density functional theory (DFT) in conjunction with a solvation model we have investigated the phenomenon of eletrode-electrolyte interaction at the electrode surface and its consequences on the electrochemical properties like the charge storage and total capacitance of doped and substituted oxygen functionalised Ti$_{3}$C$_{2}$ supercapcitor electrode. We have studied nitrogen doped, nitrogen substituted and molybdenum substituted Mxenes in acidic electrolyte H$_{2}$SO$_{4}$ solution. By considering nitrogen doping at different sites, we found that the greatest capacitance is obtained f…
Polyyne, a sp1-hybridized linear allotrope of carbon, has a tunable quasiparticle energy gap, which depends on the terminated chemical ending groups as well as the chain length. Previously, nitrogen doping was utilized to tailor the properties of different kinds of allotrope of carbon. However, how the nitrogen doping tailors the properties of the polyyne remains unexplored. Here, we applied the GW method to study the quasiparticle energy gaps of the N-doped polyynes with different lengths. When a C atom is substituted by a N atom in a polyyne, the quasiparticle energy gap varies with the subs…
Niobium superconducting radiofrequency cavities enable applications in modern accelerators and quantum computers. However, the surface resistance significantly deteriorates the cavities performance. Nitrogen doping surface treatment can consistently increase cavity performance by reducing surface resistance, but the improvement mechanism is not fully understood. Herein, we employed transmission electron microscopy and spectroscopy to uncover the structural and chemical differences of the Nb-air interface between the non-doped and nitrogen-doped cavities. The results indicate that nitrogen dopi…
Fullerene-based materials including C60 and doped C60 have previously been proposed as anodes for lithium ion batteries. It was also shown earlier that n- and p-doping of small molecules can substantially increase voltages and specific capacities. Here, we study ab initio the attachment of multiple lithium atoms to C60, nitrogen-doped C60 (n-type), and boron doped C60 (p-type). We relate the observed attachment energies (which determine the voltage) to changes in the electronic structure induced by Li attachment and by doping. We compare results with a GGA functional and a hybrid functional an…
Epitaxial strain has been shown to drive structural phase transitions along with novel functionalities in perovskite-based thin-films. Aliovalent doping at the A-site can drive an insulator-to-metal and magnetic transitions in perovskites along with a variety of interesting structural and electronic phenomena. Using first-principles calculations, we demonstrate here, how coupling epitaxial strain with A-site hole doping in a multiferroic double perovskite, Bi2FeCrO6, could lead to mitigation of issues related to anti-site defects and lowered magnetisation in thin-films of the material. We also…
We study magnetotransport in a rare earth doped topological insulator, Sm0.1Sb1.9Te3 single crystals, under magnetic fields up to 14 T. It is found that that the crystals exhibit Shubnikov de Haas oscillations in their magneto-transport behaviour at low temperatures and high magnetic fields. The SdH oscillations result from the mixed contributions of bulk and surface states. We also investigate the SdH oscillations in different orientations of the magnetic field, which reveals a three dimensional Fermi surface topology. By fitting the oscillatory resistance with the Lifshitz Kosevich theory, w…
Ordinary doping by electrons (holes) generally means that the Fermi level shifts towards the conduction band (valence band) and that the conductivity of free carriers increases. Recently, however, some peculiar doping characteristics were sporadically recorded in different materials without noting the mechanism: electron doping was observed to cause a portion of the lowest unoccupied band to merge into the valance band, leading to a decrease in conductivity. This behavior we dub as 'anti-doping' was seen in rare-earth nickel oxides SmNiO3, cobalt oxides SrCoO2.5, Li-ion battery materials and e…
Although vanadium dioxide (VO2) exhibits the most abrupt metal to insulator transition (MIT) properties near room-temperature, the present regulation of their MIT functionalities is insufficient owing to the high complexity and susception associated with V4+. Herein, we demonstrate a spark plasma assisted reactive sintering (SPARS) approach to simultaneously achieve in situ doping and sintering of VO2 within largely short period (~10 minutes). This enables high convenience and flexibility in regulating the electronic structure of VO2 via dopant elements covering Ti, W, Nb, Mo, Cr and Fe, leadi…
The Mott transistor is a paradigm for a new class of electronic devices---often referred to by the term Mottronics---, which are based on charge correlations between the electrons. Since correlation-induced insulating phases of most oxide compounds are usually very robust, new methods have to be developed to push such materials right to the boundary to the metallic phase in order to enable the metal-insulator transition to be switched by electric gating. Here we demonstrate that thin films of the prototypical Mott insulator LaTiO$_3$ grown by pulsed laser deposition under oxygen atmosphere are…
Titanium-based oxides are abundant, chemically stable, non-toxic, and highly versatile materials, with applications ranging from photovoltaics to catalysis. For rutile and anatase phases of Titanium dioxide (TiO2), the bandgap ranges from 3.0-3.2 eV, which are too large to absorb in the visible range (400 nm - 700 nm), resulting in poor photo-catalytic efficiency. Nitrogen doping into TiO2 has been able to narrow its bandgap, forming an absorption tail in the visible-light region. However, TiO2 has limits to which it can be doped, suggesting investigations of the oxygen-deficient Ti203. Using …
MnBi2Te4 and MnBi4Te7 are intrinsic antiferromagnetic topological insulators, offering a promising materials platform for realizing exotic topological quantum states. However, high densities of intrinsic defects in these materials not only cause bulk metallic conductivity, preventing the measurement of quantum transport in surface states, but may also affect magnetism and topological properties. In this paper, we show by density functional theory calculations that the strain induced by the internal heterostructure promotes the formation of large-size-mismatched antisite defect BiMn in MnBi2Te4…
Quantum anomalous Hall effect (QAHE) has been experimentally observed in magnetically doped topological insulators. However, ultra-low temperature (usually below 300 mK), which is mainly attributed to inhomogeneous magnetic doping, becomes a daunting challenge for potential applications. Here, a \textit{nonmagnetic}-doping strategy is proposed to produce ferromagnetism and realize QAHE in topological insulators. We numerically demonstrated that magnetic moments can be induced by nitrogen or carbon substitution in Bi$_2$Se$_3$, Bi$_2$Te$_3$, and Sb$_2$Te$_3$, but only nitrogen-doped Sb$_2$Te$_3…
CO2 capture is a pressing global environmental issue that drives scientists to develop creative strategies for tackling this challenge. The concept in this contribution is to produce site specific nitrogen doping in microporous carbon fibers. It creates a carbon/carbon heterojunction by using poly(ionic liquid) (PIL) as soft activation agent that deposits nitrogen species exclusively on the skin of commercial microporous carbon fibers. Such carbon-based biphasic heterojunction amplifies the interaction between carbon fiber and CO2 molecule for unusually high CO2 uptake and resistive sensing.
