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arXiv 2004.00334cond-mat.mes-hall

Large dispersive interaction between a CMOS double quantum dot and microwave photons

David J. Ibberson, Theodor Lundberg, James A. Haigh, Louis Hutin, Benoit Bertrand, Sylvain Barraud, Chang-Min Lee, Nadia A. Stelmashenko, Giovanni A. Oakes, Lau… 展开作者

David J. Ibberson, Theodor Lundberg, James A. Haigh, Louis Hutin, Benoit Bertrand, Sylvain Barraud, Chang-Min Lee, Nadia A. Stelmashenko, Giovanni A. Oakes, Laurence Cochrane, Jason W. A. Robinson, Maud Vinet, M. Fernando Gonzalez-Zalba, Lisa A. Ibberson

英文摘要:

We report fast charge state readout of a double quantum dot in a CMOS split-gate silicon nanowire transistor via the large dispersive interaction with microwave photons in a lumped-element resonator formed by hybrid integration with a superconducting inductor. We achieve a coupling rate $g_0/(2π) = 204 \pm 2$ MHz by exploiting the large interdot gate lever arm of an asymmetric split-gate device, $α=0.72$, and by inductively coupling to the resonator to increase its impedance, $Z_\text{r}=560~Ω$. In the dispersive regime, the large coupling strength at the double quantum dot hybridisation point produces a frequency shift comparable to the resonator linewidth, the optimal setting for maximum state visibility. We exploit this regime to demonstrate rapid dispersive readout of the charge degree of freedom, with a SNR of 3.3 in 50 ns. In the resonant regime, the fast charge decoherence rate precludes reaching the strong coupling regime, but we show a clear route to spin-photon circuit quantum electrodynamics using hybrid CMOS systems.

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