AI 中文总结
研究利用倒装芯片集成平台对SiMOS量子点器件进行色散读出，通过铟凸点互连实现微波耦合，展示了该工艺与低温操作的兼容性，基于谐振器检测电荷跃迁，信噪比与积分时间呈$\sqrt{t}$依赖关系，为相关技术应用奠定基础。
AI 中文摘要
异构集成提供了一种将半导体量子点器件与超导微波电路相结合的有前景的途径，同时允许每个组件使用优化的工艺流程制造。在此，我们展示了一个用于硅金属氧化物半导体（SiMOS）量子点器件色散读出的倒装芯片集成平台。一个SiMOS双量子点芯片通过铟凸点互连与一个超导铝谐振器芯片键合，以实现与量子点栅极的微波耦合。我们表明，所开发的倒装芯片工艺与SiMOS器件和超导谐振器的低温操作兼容，并展示了基于谐振器的量子点系统中电荷跃迁检测。读出信噪比与积分时间呈$\sqrt{t}$依赖关系，在积分时间约为0.3ms时达到SNR = 1。这些结果确立了倒装芯片键合作为在直流和微波频率下工作的SiMOS量子点器件的可行集成方法，对基于谐振器的技术如自旋 - 光子耦合有潜在应用。
英文摘要
Heterogeneous integration provides a promising route to combine semiconductor quantum dot devices and superconducting microwave circuits, while allowing each component to be fabricated using an optimized process flow. Here, we demonstrate a flip-chip integrated platform for dispersive readout of silicon metal-oxide semiconductor (SiMOS) quantum dot devices. A SiMOS double quantum dot chip is bonded to a superconducting aluminum resonator chip using indium bump interconnects to enable microwave coupling to the quantum dot gate. We show that the developed flip-chip process is compatible with cryogenic operation of both the SiMOS device and the superconducting resonator, and demonstrate resonator-based detection of charge transitions in the quantum dot system. The readout signal-to-noise ratio follows a dependence of $\sqrt{t}$ with the integration time, reaching SNR = 1 at an integration time of approximately 0.3 ms. These results establish flip-chip bonding as a viable integration approach for SiMOS quantum dot devices operating at both dc and microwave frequencies, with potential applications for resonator-based techniques such as spin-photon coupling.
Comments6 pages, 3 figures
