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arXiv 2003.05518cond-mat.mes-hall
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Skyrmion-缺陷相互作用剖面的亚纳米级原子-原子工艺

Sub-nanoscale atom-by-atom crafting of skyrmion-defect interaction profiles

I Gede Arjana, Imara Lima Fernandes, Jonathan Chico, Samir Lounis

摘要:

磁skyrmions是由于其拓扑性质和纳米尺寸的自旋电子器件的信息载体的主要候选人。然而,任何材料固有的不可避免的不均匀性导致skyrmion的钉扎或排斥,类似于生物学概念,定义了skyrmion-缺陷相互作用的表型,在它们的运动中产生复杂性,并挑战它们作为未来信息位的应用。在这里,我们表明,原子的原子制造的多原子缺陷,反铁磁性或铁磁性,允许他们的能量分布,我们建立一个示意性的庞氏正方形的繁殖。根据第一性原理,在Ir(111)表面上的PdFe双层中产生skyrmions,由此产生的相互作用表型是丰富的。它可以是相反的原始一个,并最终是双重钉扎排斥性质产生的能源景观托管多域。这是由堆叠网站,几何形状,尺寸和化学性质的吸附缺陷,控制所涉及的磁相互作用。这项工作提供了新的见解,对破坏性的设备架构的发展,将缺陷纳入其设计,旨在控制和引导skyrmions。

英文摘要:

Magnetic skyrmions are prime candidates as information carriers for spintronic devices due to their topological nature and nanometric size. However, unavoidable inhomogeneities inherent to any material leads to pinning or repulsion of skyrmions that, in analogy to biology concepts, define the phenotype of the skyrmion-defect interaction, generating complexity in their motion and challenging their application as future bits of information. Here, we demonstrate that atom-by-atom manufacturing of multi-atomic defects, being antiferromagnetic or ferromagnetic, permits the breeding of their energy profiles, for which we build schematically a Punnet-square. As established from first-principles for skyrmions generated in PdFe bilayer on Ir(111) surface, the resulting interaction phenotype is rich. It can be opposite to the original one and eventually be of dual pinning-repulsive nature yielding energy landscapes hosting multi-domains. This is dictated by the stacking site, geometry, size and chemical nature of the adsorbed defects, which control the involved magnetic interactions. This work provides new insights towards the development of disruptive device architectures incorporating defects into their design aiming to control and guide skyrmions.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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