了解Pr0 RRAM中电阻变化的位置
Understanding the Location of Resistance Change in the Pr0.7Ca0.3MnO3 RRAM
摘要：
基于Pr 1-xCaxMnO 3（PCMO）的电阻随机存取存储器（RRAM）在大规模存储器和神经形态应用中是有吸引力的，因为它是非永久性的、面积可扩展的并且具有多个电阻状态以及优异的耐久性和保持性。当与反应电极接触时，PCMO RRAM表现出面积可缩放的电阻切换。在电学上观察到基于界面氧化还原反应的电阻开关。然而，电阻变化是否通过部分（接近界面）或整个本体发生在很大程度上是有争议的。本质上，双端器件无法提供PCMO RRAM中电阻变化位置的直接证据。在本文中，我们提出并实验证明了一种新的三端RRAM器件，其中一个薄的第三端（~ 20 nm）横向插入在一个典型的垂直2端RRAM器件的PCMO厚度为~ 80 nm。使用3 T-RRAM方法，我们表明，电阻变化主要发生在上体（靠近反应电极界面）-这是高度不对称的。然而，其产生具有对称IV特性的基于SCLC的电阻变化。这是第一次，基于界面氧化还原和体SCLC的电阻变化已经在实验上被示出为通过RRAM的第三端子相关且一致地实现。这样的研究使得能够批判性地理解该设备，从而能够设计和开发用于存储器和神经形态计算应用的PCMO RRAM。
英文摘要：
Pr1-xCaxMnO3 (PCMO) based resistance random access memory (RRAM) is attractive in large scale memory and neuromorphic applications as it is non-filamentary, area scalable and has multiple resistance states along with excellent endurance and retention. The PCMO RRAM exhibit area scalable resistive switching when in contact with the reactive electrode. The interface redox reaction based resistance switching is observed electrically. Yet, whether resistance change occurs through partial (close to interface) or entire bulk is largely debated. Essentially, a two-terminal device is unable to provide direct evidence of the resistance change location in the PCMO RRAM. In this paper, we propose and experimentally demonstrate a novel three-terminal RRAM device in which a thin third terminal (~20nm) is inserted laterally in a typical vertical 2 terminal RRAM device of PCMO thickness of ~80nm. Using the 3T-RRAM method, we show that resistance change occurs largely at the upper bulk (near reactive electrode interface) - which is highly asymmetric. Yet it produces SCLC based resistance change with symmetric IV characteristics. It is the first time that an interface redox and bulk SCLC based resistance change has been experimentally shown as correlated and consistent - enabled by the 3rd terminal of the RRAM. Such a study enables a critical understanding of the device which enables the design and development of PCMO RRAM for memory and neuromorphic computing applications.
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