基于PrMnO3的无选择器RRAM中挥发电流上升的温度依赖性
Temperature Dependence of Volatile Current shoot-up in PrMnO3 based Selector-less RRAM
摘要：
基于PrMnO 3（PMO）的电阻随机存取存储器（RRAM）最近被考虑用于无选择器RRAM和神经形态计算应用，通过利用其电流上升。PMO器件中的这种电流上升归因于器件中的热失控。因此，环境温度对PMO器件的电流上升的依赖性的理解对于利用负微分电阻（NDR）的各种应用是至关重要的。在本文中，我们描述了环境的热依赖性的直流IV，伴随着分析建模的发展。首先，实验示出了PMO器件的温度依赖性电流-电压特性和阈值电压的偏移。其次，焦耳加热为基础的热反馈模型耦合电流传输的空间电荷限制电流（SCLC）的发展来解释实验观察到的NDR区。最后，该模型成功地预测了实验环境温度范围内的器件行为。作为TCAD的替代方案，这种紧凑而准确的直流模型建立了一个平台，可以理解，设计和存储器和神经形态应用的设备和系统级仿真。
英文摘要：
PrMnO3 (PMO) based Resistance Random Access Memory (RRAM) has recently been considered for selector-less RRAM and neuromorphic computing applications by utilizing its current shoot-up. This current shoot-up in the PMO device is attributed to the thermal runaway in the device. Hence, the understanding of the ambient temperature dependence on the current shoot-up of the PMO device is essential for the various applications that utilize the negative differential resistance (NDR). In this paper, we characterize the ambient thermal dependence of dc IV, accompanied by the development of analytical modeling. First, the temperature-dependent current-voltage characteristic and shift in the threshold voltage of the PMO device are shown experimentally. Second, a Joule heating based thermal feedback model coupled with current transport by space charge limited current (SCLC) is developed to explain the experimentally observed NDR region. Finally, the model successfully predicts device behavior over a range of experimental ambient temperatures. As an alternative to TCAD, such a compact and accurate dc model sets up a platform to enable understanding, design with device and systems-level simulations of memory and neuromorphic applications.
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