The effect of Sr doping in BaTiO3 (BTO) with nominal compositions Ba0.80Sr0.20TiO3 (BSTO) have been explored in its structural, lattice vibration, dielectric, ferroelectric and electrocaloric properties. The temperature dependent dielectric results elucidate the enhancement in dielectric constant and exhibit three frequency independent transitions around 335, 250 and 185 K which are related to different structural transitions. All these transitions occur at lower temperature as compared with pristine BTO, however; remnant electric polarization (P) of BSTO is much higher than in BTO. The value of P is around 5 microC/cm2 at room temperature and the maximum P around 8 microC/cm2 is observed at tetragonal to orthorhombic and orthorhombic to rhombohedral transitions. The electro-caloric effect shows the maximum adiabatic change in temperature deltaT approx 0.24 K at cubic to tetragonal transition. The temperature dependent synchrotron X-ray diffraction and Raman results shows correlations between P, crystal structure and lattice vibrations. Our results demonstrate the enhancement in ferroelectric properties of BTO with Sr doping. The origin of the enhancement in ferroelectric property is also discussed which is related to the appearance of superlattice peak around room temperature due to TiO6 octahedral distortion. These enhanced properties would be useful to design lead free high quality ferroelectric and piezoelectric materials.
We propose a model of magneto-electric effect in doped magnetic ferroelectrics. This magneto-electric effect does not involve the spin-orbit coupling and is based purely on the Coulomb interaction. We calculate magnetic phase diagram of doped magnetic ferroelectrics. We show that magneto-electric coupling is pronounced only for ferroelectrics with low dielectric constant. We find that magneto-electric coupling leads to modification of magnetization temperature dependence in the vicinity of ferroelectric phase transition. A peak of magnetization appears. We find that magnetization of doped magn…
Relaxor ferroelectrics are complex materials with distinct properties different from classic ferroelectrics. Probing frequency depended dielectric susceptibility is its trait. Other empirical laws build on classic ferroelectrics are still applicable to relaxor ferroelectrics. Here we report an abnormal improved dielectric in La doped relaxor ferroelectric 0.4PNN-0.6PHT, which deviated from the consistent variation relationship with piezoelectric coefficient. A mesoscale mechanism is proposed to reveal the origin of the improved dielectric response in 0.4PNN-0.6PHT, where the polar nanoregions …
Single-phase perovskite 5 at.% Mn-doped and undoped polycrystalline BaTiO3 thin films have been grown under different oxygen partial pressures by pulsed laser deposition on platinum-coated sapphire substrates. Ferroelectricity is only observed for the Mn-doped and undoped BaTiO3 thin films grown under relatively high oxygen partial pressure. Compared to undoped BaTiO3, Mn-doped BaTiO3 reveals a low leakage current, increased dielectric loss, and a decreased dielectric constant. Ferromagnetism is seen on Mn-doped BaTiO3 thin films prepared under low oxygen partial pressure and is attributed to …
Using a joint approach of density functional theory and model calculations, we demonstrate that a prototypical charge ordered half-doped manganite, La$_{1/2}$Ca$_{1/2}$MnO$_3$ is multiferroic. The combination of a peculiar charge-orbital ordering and a tendency to form spin dimers breaks inversion symmetry, leads to a ferroelectric ground-state with a polarization up to several $μC/cm^2$. The presence of improper ferroelectricity does not depend on hotly debated structural details of this material: in the Zener-polaron structure we find a similar dramatic ferroelectric response with a large po…
The realization of multiferroicity in 2D nanomaterials is crucially important for designing advanced nanoelectronic devices such as non-volatile multistate data storage. In this work, the coexistence of ferromagnetism and ferroelectricity is reported in monolayer SnTe system by transition metal (TM) doping. Based on first-principles calculations, the spontaneous spin polarization could be realized by TM doping in ferroelectric SnTe monolayer. In addition to in-plane ferroelectric polarization, the out-of-plane ferroelectric polarization emerges in Mn (Fe)-doped SnTe monolayer due to the intern…
Ferroelectric polar displacements have recently been observed in conducting electron-doped BaTiO3. The co-existence of a ferroelectric phase and conductivity opens the door to new functionalities which may provide a unique route for novel device applications. Using first-principles methods and electrostatic modeling we explore the effect that the switchable polarization of electron-doped BaTiO3 (n-BaTiO3) has on the electronic properties of the SrRuO3/n-BaTiO3 (001) interface. Ferroelectric polarization controls the accumulation or depletion of electron charge at the interface, and the associa…
We report a neutron scattering study of the ferroelectric phase transition in Sr$_{0.585}$Ce$_{0.025}$Ba$_{0.39}$Nb$_2$O$_6$ (SBN-61:Ce). We find no evidence for a soft transverse optic phonon. We do, however, observe anisotropic diffuse scattering. This scattering has inelastic and elastic contributions. In the paraelectric phase the susceptibility associated with the elastic diffuse scattering follows well the anomaly of the dielectric susceptibility of SBN-61:Ce. In the ferroelectric phase the lineshape of the elastic scattering is consistent with the form expected for the ferroelectric dom…
We report nearly single phase Pb(Zr0.14Ti0.56Ni0.30)O3-delta(PZTNi30) ferroelectric having large remanent polarization (15-30 μC/cm2), 0.3-0.4 V open circuit voltage (VOC), reduced band gap (direct 3.4 eV, and indirect 2.9 eV), large ON and OFF photo current ratio, and the fast decay time. Reasonably good photo current density (1-5 μA/cm2) was obtained without gate bias voltage which significantly increased with large bias field. Ferroelectric polarization dictates the polarity of VOC and direction of short circuit current (ISC), a step forward towards the realization of noncentrosymmetric fer…
Ferroelectric and magnetic properties of Fe-doped K0.45Na0.49Li0.06NbO3 (KNLN) and Cu-doped KNLN ceramics were investigated. Comparing with pure KNLN ceramic, Fe-doped KNLN shows ferromagnetic and ferroelectric properties simultaneously while Cu-doped KNLN shows stronger diamagnetic and ferroelectric properties. The magnetic property in KNLN matrix are believed to be induced by point defects. The ferromagnetism of Fe-doped KNLN can be explained by the F-center exchange mechanism, while the antiferroelectric-like loop and diamagnetism of Cu-doped KNLN was explained by the special defect structu…
Doping ferroelectric Hf0.5Zr0.5O2 with La is a promising route to improve endurance. However, the beneficial effect of La on the endurance of polycrystalline films may be accompanied by degradation of the retention. We have investigated the endurance - retention dilemma in La-doped epitaxial films. Compared to undoped epitaxial films, large values of polarization are obtained in a wider thickness range, whereas the coercive fields are similar, and the leakage current is substantially reduced. Compared to polycrystalline La-doped films, epitaxial La-doped films show more fatigue but there is no…
We have proposed the phenomenological description of polarization switching peculiarities in ferroelectric semiconductors with charged defects and prevailing extrinsic conductivity. Exactly we have modified Landau-Ginsburg approach shown that the macroscopic state of the aforementioned inhomogeneous system can be described by three coupled equations for three order parameters. Both the experimentally observed coercive field values well below the thermodynamic one and the various hysteresis loop deformations (minor, constricted and double loops) have been obtained in the framework of our model.…
Typical ferroelectrics possess a large spontaneous polarization Ps but simultaneously a large remnant polarization Pr as well, resulting in an inferior energy storage density.A mechanism that can reduce the Pr while maintain the Ps is demanded to enhance the energy storage property of ferroelectrics.In the present study, it is shown that after acceptor doping and aging treatment, the domain switching in ferroelectrics becomes reversible, giving rise to a pinched double hysteresis loop. The pinched loop with a large Ps and a small Pr thus results in an enhanced energy storage density. The physi…
The domain structure of uniaxial ferroelectric lithium niobate single crystals is investigated using Raman spectroscopy mapping. The influence of doping with magnesium and poling at room temperature is studied by analysing frequency shifts at domain walls and their variations with dopant concentration and annealing conditions. It is shown that defects are stabilized at domain walls and that changes in the defect structures with Mg concentration can be probed by the shift of Raman modes. We show that the signatures of polar defects in the bulk and at the domain walls differ.
The electric field control of functional properties is a crucial goal in oxide-based electronics. Non-volatile switching between different resistivity or magnetic states in an oxide channel can be achieved through charge accumulation or depletion from an adjacent ferroelectric. However, the way in which charge distributes near the interface between the ferroelectric and the oxide remains poorly known, which limits our understanding of such switching effects. Here we use a first-of-a-kind combination of scanning transmission electron microscopy with electron energy loss spectroscopy, near-total…
Ferroelectric materials with up-conversion luminescence (UCL) properties have potential opto-electric applications for display and sensing etc. Here, we demonstrate strong green UCL and enhanced electrical properties in Er3+-doped Na0.5Bi0.5TiO3 thin films. The thin films are prepared via using a modified chemical solution deposition method. These thin films are phase-pure and crystallized in perovskite structure. The largest remnant polarization (Pr) and highest dielectric constant are obtained from Na0.5Bi0.49Er0.01TiO3 thin films, and their values are 0.22 C/m2 and 1166, respectively. Meanw…
In this paper we study the size effects of the ferroelectric nanotube phase diagrams and polar properties allowing for effective surface tension and depolarization field influence. The approximate analytical expression for the paraelectric-ferroelectric transition temperature dependence on the radii of nanotube, polarization gradient coefficient, extrapolation length, surface tension and electrostriction coefficient was derived. It was shown that the transition temperature could be higher than the one of the bulk material for negative electrostriction coefficient. Therefore we predict conserva…
We use first-principles methods to study doped strong ferroelectrics (taking BaTiO$_3$ as a prototype). Here we find a strong coupling between itinerant electrons and soft polar phonons in doped BaTiO$_3$, contrary to Anderson/Blount's weakly coupled electron mechanism for "ferroelectric-like metals". As a consequence, across a polar-to-centrosymmetric phase transition in doped BaTiO$_3$, the total electron-phonon coupling is increased to about 0.6 around the critical concentration, which is sufficient to induce phonon-mediated superconductivity of about 2 K. Lowering the crystal symmetry of d…
We report ferroelectric ordering in Ni substituted CaBaCo4O7. Magnetization showed ferrimagnetic transition at 60 K and an additional transition is found ~ 82 K, further, enhanced antiferromagnetic interactions and decrease in saturation magnetization are noticed with Ni substitution. The dielectric and pyroelectric measurements illustrate a strong coupling between spin and charge degrees of freedom; ferroelectric behavior is confirmed with enhanced ordering temperature (~82 K) and saturation polarization (250 muC/m2. Neutron diffraction has revealed an increase in c-lattice parameter in Ni sa…
While doping is widely used for tuning physical properties of perovskites in experiments, it remains a challenge to exactly know how doping achieves the desired effects. Here, we propose an empirical and computationally tractable model to understand the effects of doping with Fe-doped BaTiO$_{3}$ as an example. This model assumes that the lattice sites occupied by Fe ion and its nearest six neighbors lose their ability to polarize, giving rise to a small cluster of defective dipoles. Employing this model in Monte-Carlo simulations, many important features like reduced polarization and the conv…
Doping is a widely used method to tune physical properties of ferroelectric perovskites. Since doping can induce charges due to the substitution of certain elements, charge effects shall be considered in doped samples. To understand how charges can affect the system, we incorporate the dipole-charge interaction into our simulations, where the pinched hysteresis loops can well be reproduced. Two charge compensation models are proposed and numerically investigated to understand how lanthanum doping affect BaTiO$_{3}$'s ferroelectric phase transition temperature and hysteresis loop. The consequen…
Phase evolution in (Ag1-xLix)NbO3 (ALN) solid solution was investigated by X-ray diffraction technique, dielectric and polarization measurements. It is shown that small substitution of Ag with Li gives rise to an orthorhombic-rhombohedral structural transformation in ABO3-perovskite silver niobate at room temperature. Structural refinements indicate that both A- and B-site displacements contribute to the spontaneous polarization of the ferroelectric phase with symmetry R3c. Increasing Li-concentration enhances the ferroelectric rhombohedral distortion, resulting in the increase of the para-fer…
By performing first-principles calculations on four capacitor structures based on BaTiO3 and PbTiO3, we determine the intrinsic interfacial effects that are responsible for the destabilization of the polar state in thin-film ferroelectric devices. We show that, contrary to the established interpretation, the interfacial capacitance depends crucially on the local chemical environment of the interface through the force constants of the metal-oxide bonds, and is not necessarily related to the bulk screening properties of the electrode material. In particular, in the case of interfaces between AO-…
We carry out first-principles calculations for CaTiO$_3$/BaTiO$_3$ superlattices with epitaxial strain corresponding to growth on a SrTiO$_3$ substrate, and consider octahedral rotations as well as ferroelectric distortions. The calculations are done as a function of electric displacement field, and both a macroscopic and a local electrostatic analysis are carried out. We find that strong octahedral rotations occur for TiO$_6$ octahedra sandwiched between CaO layers on both sides, but are strongly suppressed if either neighboring layer is a BaO layer. Due to the resulting enhancement of the fe…
Insertion of layers displaying field-induced metal-to-insulator (M/I) transition in ferroelectric tunnel junctions (FTJs) has received attention as a potentially useful way to enlarge junction tunnel electroresistance (TER). Half-doped manganites being at the verge of metal-insulator character are thus good candidates to be slave layers in FTJs. However, the phase diagram of these oxides is extremely sensitive to strain and thus can be radically different when integrated in epitaxial FTJs. Here we report a systematic study of large-area (A = 4 to 100 um2) Pt/La0.5Sr0.5MnO3/BaTiO3/La0.7Sr0.3MnO…
Hafnium oxide (HfO2)-based ferroelectrics offer remarkable promise for memory and logic devices in view of their compatibility with traditional silicon CMOS technology, high switchable polarization, good endurance and thickness scalability. These factors have led to steep rise in research on this class of materials over the past number of years. At the same time, only a few reports on the direct sensing of nanoscale ferroelectric properties exist, with many questions remaining regarding the emergence of ferroelectricity in these materials. While piezoresponse force microscopy (PFM) is ideally …
A series of polycrystalline pyrochlore rare-earth titanate Ho_{2-x}Cr_xTi_2O_7 are synthesized in order to enhance the ferroelectricity of pyrochlore Ho2Ti2O7. For the sample close to the doping level x=0.4, a giant enhancement of polarization P up to 660\muC/m2 from 0.54\muC/m2 at x=0 is obtained, accompanied with an increment of ferroelectric transition point Tc up to ~140K from ~60K. A magnetic anomaly at T~140K together with the polarization response to magnetic field, is identified, implying the multiferroic effect in Ho2-xCrxTi2O7.
We use first-principles density-functional total energy and polarization calculations to calculate the piezoelectric tensor at zero temperature for both cubic and simple tetragonal ordered supercells of Pb_3GeTe_4. The largest piezoelectric coefficient for the tetragonal configuration is enhanced by a factor of about three with respect to that of the cubic configuration. This can be attributed to both the larger strain-induced motion of cations relative to anions and higher Born effective charges in the tetragonal case. A normal mode decomposition shows that both cation ordering and local rela…
In this paper, an efficient computational material design approach (cluster expansion) is employed for the ferroelectric $PbTiO_3$/$SrTiO_3$ system. Via exploring a conguration space including over $3 \times 10^6$ candidates, two special cation ordered configurations: either perfect or mixed 1/1 (101) superlattice, are identified with the mostly enhanced ferroelectric polarization by up to about 100% in comparison with the (001) superlattice. Analyzing these two special configurations reveals the exotic couplings between the antiferrodistortive distortion (AFD) and ferroelectric polarization (…
We study Mn substitution for Ti in BaTiO3 with and without compensating oxygen vacancies using density functional theory (DFT) in combination with dynamical mean field theory (DMFT). We find strong charge and spin fluctuations. Without compensating oxygen vacancies, the ground state is found to be a quantum superposition of two distinct atomic valences, 3d4 and 3d5. Introducing a compensating oxygen vacancy at a neighboring site reduces both charge and spin fluctuations due to the reduction of electron hopping from Mn to its ligands. As a consequence, valence fluctuations are reduced, and is c…
The origins of enhanced piezoelectric coupling along nonpolar crystallographic directions in ferroelectric BaTiO3 are investigated using in situ neutron spectroscopy. It is observed that an electric field applied away from the equilibrium polarization direction causes changes in the phonon spectra that lead to an increase in the interaction between the transverse acoustic and transverse optic branches (TA-TO) near the Brillouin zone center. This provides a direct lattice dynamics mechanism for enhanced electromechanical coupling, and could act as a guide for designing improved piezoelectric ma…
Polar metals are rare because free carriers in metals screen electrostatic potential and eliminate internal dipoles. Degenerate doped ferroelectrics may create an approximate polar metallic phase. We use first-principles calculations to investigate $n$-doped LiNbO$_3$-type oxides (LiNbO$_3$ as the prototype) and compare to widely studied perovskite oxides (BaTiO$_3$ as the prototype). In the rigid-band approximation, substantial polar displacements in $n$-doped LiNbO$_3$ persist even at 0.3 $e$/f.u. ($\simeq$ 10$^{21}$ cm$^{-3}$), while polar displacements in $n$-doped BaTiO$_3$ quickly get su…
The correlation between the shift current mechanism for the bulk photovoltaic effect (BPVE) and the structural and electronic properties of ferroelectric perovskite oxides is not well understood. Here, we study and engineer the shift current photovoltaic effect using a visible-light-absorbing ferroelectric Pb(Ni$_{x}$Ti$_{1-x}$)O$_{3-x}$ solid solution from first principles. We show that the covalent orbital character dicates the direction, magnitude, and onset energy of shift current in a predictable fashion. In particular, we find that the shift current response can be enhanced via electrost…
The dielectric properties of tantalum doped BaTi0.85Zr0.15O3 were investigated. The conventional solid state reaction method was used to make the ceramic samples. The composition was close to the pinch point of the three structure phase transitions in BaTiO3. Powder X-ray diffraction result indicated that the samples were in very slightly distorted rhombohedral structure at room temperature, and the dielectric measurement showed only cubic-to-rhombohedral phase transition occurred. Instead of a sharp peak characteristic of a ferroelectric (FE) transition, the large dielectric response was simi…
Recent experiments demonstrated robust ferroelectricity in Mg-doped ZnO (ZMO) of the wurtzite structure, hinting at a promising strategy to substantially expand the list of ferroelectrics by doping conventional piezoelectrics. We investigate the origin of ferroelectricity in ZMO with first-principles density functional theory (DFT). The general argument that the Mg alloying could soften the ionic potential energy surface of ZMO for polarization reversal is overly simplified. Our DFT calculations reveal that even at a high Mg concentration, the energy difference ($ΔU$) between the polar and non…
We investigate the nonlinear response of the domain wall velocity ($v$) to an external electric field ($E_{ext}$) in ferroelectric Si-doped HfO$_{2}$ thin film capacitors using piezoresponse force microscopy (PFM) and switching current measurements. We verified the reliability of the PFM images of ferroelectric domain switching by comparing the switched volume fraction in the PFM images with the time-dependent normalized switched polarization from the switching current data. Using consecutive time-dependent PFM images, we measured the velocity of the pure lateral domain wall motion at various …
We report optical enhancement in polarization and dielectric constant near room temperature in Pb0.6Li0.2Bi0.2Zr0.2Ti0.8O3 (PLBZT) electro-ceramics; these are doubly substituted members of the most important commercial ferroelectric PbZr0.2Ti0.8O3 (PZT:20/80). Partial (40%) substitution of equal amounts of Li+1 and Bi+3 in PZT: 20/80 retains the PZT tetragonal structure with space group P4mm. Under illumination of white light and weak 405-nm near-ultraviolet laser light (30 mW), an unexpectedly large (200-300%) change in polarization and displacement current was observed. Light also changes th…
Atomic-scale control of spins by electric fields is highly desirable for future technological applications. Magnetically-doped Aurivillius-phase oxides present one route to achieve this, with magnetic ions substituted into the ferroelectric structure at dilute concentrations, resulting in spin-charge coupling. However, there has been minimal exploration of the ferroelectric switching pathways in this materials class, limiting predictions of the influence of an electric field on the magnetic spins in the structure. Here, we determine the ferroelectric switching pathways of the end member of the…
Ab initio calculations are utilized as an input to develop a simple model of polarization in epitaxial short-period CaTiO3/SrTiO3/BaTiO3 superlattices grown on a SrTiO3 substrate. The model is then combined with a genetic algorithm technique to optimize the arrangement of individual CaTiO3, SrTiO3 and BaTiO3 layers in a superlattice, predicting structures with the highest possible polarization and a low in-plane lattice constant mismatch with the substrate. This modelling procedure can be applied to a wide range of layered perovskite-oxide nanostructures providing guidance for experimental dev…
Within the framework of the phenomenological Ginzburg-Landau theory influence of semiconductor electrodes on the properties of thin ferroelectric films is considered. The contribution of the semiconductor electrodes with different Debye screening length of carriers is included in functional of free energy. The influence of highly doped semiconductor electrodes on the depolarization field and the film properties was shown to be great.
The coupling between strain gradients and polarization, known as flexoelectricity, offers a new mechanism to control the functionality of dielectric materials. However, for the effect to be practically attractive, dynamic control of the strain gradient with magnitudes far exceeding those achievable via mechanical deformation (~10 $m^{-1}$) is needed. Strain-engineered thin films exhibit extraordinary strain gradients of $10^5-10^6 m{-1}$ arising from structural relaxation within a short space range that greatly enhances the steady-state flexoelectric effect. Here we report a giant, optically i…
We report magnetization measurements and magnetic resonance data for SrTiO3 doped by manganese. We show that the recently reported coexistent spin and dipole glass (multiglass) behaviours are strongly affected by the distribution of Mn ions between the Sr and Ti sites. Motivated by this finding we calculate the magnetic interactions between Mn impurities of different kinds. Both LSDA+U and many-body perturbation theory evidence that magnetic and magnetoelectric interactions are mediated by Mn$_B^{4+}$ ions substituting for Ti. We propose two microscopic magnetoelectric coupling mechanisms, whi…
Evolution of a stripe array of polarization domains triggered by the oxygen vacancy migration in an acceptor doped ferroelectric is investigated in a self-consistent manner. A comprehensive model based on the Landau-Ginzburg-Devonshire approach includes semiconductor features due to the presence of electrons and holes, and effects of electrostriction and flexoelectricity especially significant near the free surface and domain walls. A domain array spontaneously formed in the absence of an external field is shown to undergo a reconstruction in the course of the gradual oxygen vacancy migration …
The direct magnetoelectric (ME) effect resulting from the polarization changes induced in a ferroelectric film by the application of a magnetic field to a ferromagnetic substrate is described using the nonlinear thermodynamic theory. It is shown that the ME response strongly depends on the initial strain state of the film. The ME polarization coefficient of the heterostructures involving Terfenol-D substrates and compressively strained lead zirconate titanate (PZT) films, which stabilize in the out-of-plane polarization state, is found to be comparable to that of bulk PZT/Terfenol-D laminate c…
Epitaxial Mn-doped BiFeO3 (MBFO) thin films were grown on GaAs (001) substrate with SrTiO3 (STO) buffer layer by pulsed laser deposition. X-ray diffraction results demonstrate that the films show pure (00l) orientation, and MBFO(100)//STO(100), whereas STO (100)//GaAs (110). Piezoresponse force microscopy images and polarization versus electric field loops indicate that the MBFO films grown on GaAs have an effective ferroelectric switching. The MBFO films exhibit good ferroelectric behavior (2Pr ~ 92 μC/cm2 and 2EC ~ 372 kV/cm). Ferromagnetic property with saturated magnetization of 6.5 emu/cm…
We investigate the electronic, ferroelectric and magnetic properties of KTaO3/PbTiO3 interfaces by using conventional density functional theory (DFT) and advanced DFT such as hybrid functional HSE06. We show that doped holes in valence bands or electrons in conduction bands give rise to ferromagnetism at the interfaces. The ferromagnetic states are ground states for both hole-doped (p-type) and electron-doped (n-type) interfaces by comparison with their corresponding nonmagnetic and antiferromagnetic states. Carriers (holes or electrons) concentrate near the interface to screen the polarizatio…
Composition-dependent structural and polar properties of epitaxial short-period CaTiO_3/SrTiO_3/BaTiO_3 superlattices grown on a SrTiO_3 substrate are investigated with first-principles density-functional theory computational techniques. Polarization enhancement with respect to bulk tetragonal BaTiO_3 is found for two- and three-component superlattices with a BaTiO_3 concentration of more than 30%. Individual BaTiO_3 layer thickness is identified as an important factor governing the polarization improvement. In addition, the degree of inversion-symmetry breaking in three-component superlattice…
We present a spatial and wave-vector resolved study of the electronic structure of micron sized ferroelectric domains at the surface of a BaTiO3(001) single crystal. The n-type doping of the BaTiO3 is controlled by in-situ vacuum and oxygen annealing, providing experimental evidence of a surface paraelectric-ferroelectric transition below a critical doping level. Real space imaging of photoemission threshold, core level and valence band spectra show contrast due to domain polarization. Reciprocal space imaging of the electronic structure using linearly polarized light provides unambiguous evid…
Large Enhancements in Optical and Piezoelectric Properties in Ferroelectric Zn1-xMgxO Thin Films through Engineering Electronic and Ionic Anharmonicities
