We report experimental evidence of topological Dirac fermion charge carriers in pure and robust $α$-Sn films grown on InSb substrates. This evidence was acquired using standard macroscopic four-point contact resistance measurements, conducted on uncapped films with a significantly reduced bulk mobility. We analyzed and compared electrical characteristics of the constituting components of the $α$-Sn/InSb sample, and propose a three-band drift velocity model accordingly. A surface band, with low carrier density and high mobility, is identified as the origin of the observed Shubnikov -- de Haas oscillations. The analysis of these quantum oscillations results in a non-trivial value of the phase shift $γ=0$, characteristic for topologically protected Dirac fermions. For the same uncapped samples we estimate the momentum relaxation time $τ\approx 300\ \mathrm{fs}$, which is significantly larger in comparison with the previous reports on grown $α$-Sn films.
The impact of growth conditions on the magnetic and electrical transport properties of oriented polycrystalline Sm0.55Sr0.45MnO3 thin films prepared on nearly lattice matching LSAT(100) single crystal substrates by nebulized spray pyrolysis has been studied.
We correlate simultaneously recorded magnetotransport and spatially resolved magneto optical Kerr effect (MOKE) data in Co2FeAl Heusler compound thin films micropatterned into Hall bars. Room temperature MOKE images reveal the nucleation and propagation of domains in an externally applied magnetic field and are used to extract a macrospin corresponding to the mean magnetization direction in the Hall bar. The anisotropic magnetoresistance calculated using this macrospin is in excellent agreement with magnetoresistance measurements. This suggests that the magnetotransport in Heusler compounds ca…
We investigate the magnetic and magnetotransport properties of nanostructured Nd0.6Sr0.4MnO3 (NSMO) thin films grown on (100) oriented SrTiO3 (STO) substrates. The thin films fabricated using the pulsed laser deposition technique have been found to possess two distinct surface morphologies: granular and nano rod type. Magnetization measurements have revealed that the films with rod-type morphology exhibit improved in-plane magnetic anisotropy. Magnetotransport studies have revealed that the granular thin films display a characteristic butterfly-shaped low-field magneto-resistive (LFMR) behavio…
We report growth and characterization of epitaxial $α$-Sn thin films grown on CdTe(111)B. Noninvasive techniques verify the film's pseduomorphic growth before fabrication of magnetotransport devices, overcoming ex-situ obstacles on uncapped films for measurement in the Hall bar geometry. We identify a transition to metallic behavior at low temperature with large magnetoresistance, high mobility, and quantum oscillations tentatively suggesting an n-type Dirac semimetallic channel. A parallel p-type dopant channel with high carrier density is seen to dominate at thinner film thicknesses. Careful…
To understand the near-interface magnetism in manganites, uniform, ultra-thin films of La_{0.67}Sr_{0.33}MnO_3 were grown epitaxially on single crystal (001) LaAlO_3 and (110) NdGaO_3 substrates. The temperature and magnetic field dependent film resistance is used to probe the film's structural and magnetic properties. A surface and/or interface related dead-layer is inferred from the thickness dependent resistance and magnetoresistance. The total thickness of the dead layer is estimated to be $\sim 30 Å$ for films on NdGaO_3 and $\sim 50 Å$ for films on LaAlO_3.
The low field magnetotransport of La$_{0.7}$Sr$_{0.3}$MnO$_3$ (LSMO) films grown on SrTiO$_3$ substrates has been investigated. A high qualtity LSMO film exhibits anisotropic magnetoresistance (AMR) and a peak in the magnetoresistance close to the Curie temperature of LSMO. Bi-epitaxial films prepared using a seed layer of MgO and a buffer layer of CeO$_2$ display a resistance dominated by grain boundaries. One film was prepared with seed and buffer layers intact, while a second sample was prepared as a 2D square array of grain boundaries. These films exhibit i) a low temperature tail in the l…
We have studied the magneto-optical and magnetotrasnport properties of GaMnAs thin films with high Mn concentrations (x= 12.2 - 21.3%) grown by molecular-beam epitaxy. These heavily Mn-doped GaMnAs films were formed by decreasing the growth temperature to as low as 150-190 degree C and by reducing the film thickness to 10 nm in order to prevent precipitation of hexagonal MnAs clusters. Magnetic circular dichroism (MCD) and anomalous Hall effect measurements indicate that these GaMnAs films have the nature of intrinsic ferromagnetic semiconductors with high ferromagnetic transition temperature …
Transport properties of an epitaxial film of La_0.7Sr_0.3MnO_3 (LSMO), deposited epitaxially on a LaAlO_3 bi-crystal substrate having a misorientation angle of 9.2 deg., have been studied. The film was patterned into a meander containing 100 grain boundaries. The resistivity of the sample exhibits two components; one originating from the grain boundary regions, and one from the LSMO elements in the meander; the latter contribution is similar to the resistivity of a reference epitaxial LSMO film. The low (<0.5 T) and high (up to 6 T) field magnetoresistance was also studied. The meander show a …
We report the magnetoresistance measurements of a highly oriented La0.55Ho0.15Sr0.3MnOz film on LaAlO3 substrate. The film has a metal-insulator transition around 200 K and shows pronounced thermomagnetic history effect in its transport properties below 45 K at 7 Tesla. The irreversibility temperature shifts to lower temperatures when the field is reduced. This behaviour is opposite to the thermomagnetic history effect observed in the magnetisation. At 2.8 K one also observes a significant hysteresis in the resistance versus field curve. We propose a qualitative explanation for these observati…
We show that applying strain on half-doped manganites makes it possible to tune the system to the proximity of a metal-insulator transition and thereby generate a colossal magnetoresistance (CMR) response. This phase competition not only allows control of CMR in ferromagnetic metallic manganites but can be used to generate CMR response in otherwise robust insulators at half-doping. Further, from our realistic microscopic model of strain and magnetotransport calculations within the Kubo formalism, we demonstrate a striking result of strain engineering that, under tensile strain, a ferromagnetic…
We probe the current-induced magnetic switching of insulating antiferromagnet/heavy metals systems, by electrical spin Hall magnetoresistance measurements and direct imaging, identifying a reversal occurring by domain wall (DW) motion. We observe switching of more than one third of the antiferromagnetic domains by the application of current pulses. Our data reveal two different magnetic switching mechanisms leading together to an efficient switching, namely the spin-current induced effective magnetic anisotropy variation and the action of the spin torque on the DWs.
Topological insulators (TIs) like Bi$_2$Se$_3$ are a class of material with topologically protected surface states in which spin-momentum locking may enable spin-polarized and defect-tolerant transport. In this work, we achieved the epitaxial growth of Bi$_2$Se$_3$ thin films on germanium, which is a key material for microelectronics. Germanium also exhibits interesting properties with respect to the electron spin such as a spin diffusion length of several micrometers at room temperature. By growing Bi$_2$Se$_3$ on germanium, we aim at combining the long spin diffusion length of Ge with the sp…
Thin films of the ferromagnet Fe$_2$Ge were grown via molecular beam epitaxy, and their electrical and magneto-transport properties measured for the first time. X-ray diffraction and vibrating sample magnetometry measurements confirmed the crystalline ferromagnetic Fe$_2$Ge phase. The observed high temperature maximum in the longitudinal resistivity, as well as the observed suppression of electron-magnon scattering at low temperatures, point to the presence of strong spin polarization in this material. Measurements of the Hall resistivity, $ρ_{xy}$, show contributions from both the ordinary Ha…
The electrical resistivity, anisotropic magnetoresistance (AMR), and anomalous Hall effect of ferromagnetic Mn5Ge3, Mn5Ge3C0.8, and Mn5Si3C0.8 thin films has been investigated. The data show a behavior characteristic for a ferromagnetic metal, with a linear increase of the anomalous Hall coefficient with Curie temperature. While for ferromagnetic Mn5Si3C0.8 the normal Hall coefficient R0 and the AMR ratio are independent of temperature, these parameters strongly increase with temperature for the germanide films. This difference is attributed to the different hybridization of electronic states …
Artificial superlattices designed with ferromagnetic Pr0.85Ca0.15MnO3 insulating layer and ferroelectric Ba0.6Sr0.4TiO3 layer were grown on (100) SrTiO3 substrates. The magnetotransport properties were measured with the current perpendicular to the plane geometry. An increase in magnetoresistance (MR), with no significant low field effect, was observed as the number of ferroelectric Ba0.6Sr0.4TiO3 layer thickness increases even up to 9 unit cells. For example, the superlattice [(Pr0.85Ca0.15MnO3)10(Ba0.6Sr0.4TiO3)9]25 shows 35 % MR at 100 K, though the Pr0.85Ca0.15MnO3 film was a robust insula…
Epitaxial perovskite (110) oriented SrIrO3 (SIO) thin films were grown by pulsed laser deposition on (110) oriented DyScO3 (DSO) substrates with various film thickness t (2 nm < t < 50 nm). All the films were produced with stoichiometric composition, orthorhombic phase, and with high crystallinity. The nearly perfect in-plane lattice matching of DSO with respect to SIO and same symmetry result in a full epitaxial inplane alignment, i.e., the c-axis of DSO and SIO are parallel to each other with only slightly enlarged d110 out-of-plane lattice spacing (+0.38%) due to the small in-plane compress…
We report on the evolution of the average and depth-dependent magnetic order in thin film samples of biaxially stressed and electron-doped EuTiO$_3$ for samples across a doping range $<$0.1 to 7.8 $\times 10^{20}$ cm$^{-3}$. Under an applied in-plane magnetic field, the G-type antiferromagnetic ground state undergoes a continuous spin-flop phase transition into in-plane, field-polarized ferromagnetism. The critical field for ferromagnetism slightly decreases with an increasing number of free carriers, yet the field evolution of the spin-flop transition is qualitatively similar across the dopin…
We investigate the evolution of spin polarization, spontaneous Hall angle (SHA), saturation magnetization and Curie temperature of $B2$-ordered Fe$_{60}$Al$_{40}$ thin films under varying antisite disorder, induced by Ne$^{+}$-ion irradiation. The spin polarization increases monotonically as a function of ion fluence. A relatively high polarization of 46 % and the SHA of 3.1 % are achieved on 40 nm thick films irradiated with 2 $\cdot$ 10$^{16}$ ions/cm$^2$ at 30 keV. An interesting divergence in the trends of the magnetization and SHA is observed for low disorder concentrations. The high spin…
Highly oriented polycrystalline SSMO thin films deposited on single crystal substrates by ultrasonic nebulized spray pyrolysis have been studied. The film on LAO is under compressive strain while LSAT and STO are under tensile strain. The presence of a metamagnetic state akin to cluster glass formed due to coexisting FM and antiferromagnetic/charge order (AFM/CO) clusters. All the films show colossal magnetoresistance but its temperature and magnetic field dependence are drastically different. In the lower temperature region the magnetic field dependent isothermal resistivity also shows signat…
Magnetic and magnetotransport properties of oriented polycrystalline Pr0.58Ca0.42MnO3 thin films prepared in flowing oxygen and air ambient has been investigated. The magnetic ground state of both the films is a frozen cluster glass. In the air annealed film charge order (CO) is quenched and ferromagnetic (FM) transition, which appears at TC=148 K is followed by antiferromagnetic (AFM) transition at TN=104 K. This film shows self-field hysteretic insulator-metal transition (IMT) at TIMC=89 K and TIMW=148 K in the cooling and warming cycle, respectively. Application of magnetic field (H) gradua…
An important challenge in the field of topological materials is to carefully disentangle the electronic transport contribution of the topological surface states from that of the bulk. For Bi$_2$Te$_3$ topological insulator samples, bulk single crystals and thin films exposed to air during fabrication processes are known to be bulk conducting, with the chemical potential in the bulk conduction band. For Bi$_2$Te$_3$ thin films grown by molecular beam epitaxy, we combine structural characterization (transmission electron microscopy), chemical surface analysis as function of time (x-ray photoelec…
We report a comparative study of the properties of very thin films of La0.67Ca0.33MnO3 grown epitaxially under strain on flat SrTiO3 (STO) and on 1 deg miscut STO. For the films on flat STO the transport properties show well-known behavior, namely values of the metal-insulator transition temperature which are strongly reduced with respect to the bulk value. The reduction in films on miscut STO is significantly less strong than in films on flat STO, even though they appear similar as to strain state. Moreover, the residual resistance at low temperatures is lower than for the case of flat films.…
By pulsed-laser deposition epitaxial thin films of Sr_2FeMoO_6 have been pre- pared on (100) SrTiO_3 substrates. Already for a deposition temperature of 320 C epitaxial growth is achieved. Depending on deposition parameters the films show metallic or semiconducting behavior. At high (low) deposition temperature the Fe,Mo sublattice has a rock-salt (random) structure. The metallic samples have a large negative magnetoresistance which peaks at the Curie temperature. The magnetic moment was determined to 4 mu_B per formula unit (f.u.), in agreement with the expected value for an ideal ferrimagnet…
Pyrochlore iridates have attracted growing attention because of a theoretical prediction of a possible topological semimetal phase originating from all-in-all-out spin ordering. Related to the topological band structure, recent findings of the magnetic domain wall conduction have stimulated investigations of magnetic domain distribution in this system. Here, we investigate the size of magnetic domains in Eu$_2$Ir$_2$O$_7$ single crystalline thin films by magnetoresistance (MR) using microscale Hall bars. Two distinct magnetic domains of the all-in-all-out spin structure are known to exhibit li…
ThCr2Si2-type Ce2O2Bi epitaxial thin films were grown by recently developed multilayer solid phase epitaxy. The ionic state of Ce was confirmed to be 3+ by x-ray photoelectron spectroscopy, corresponding to the electronic configuration of [Xe]4f1. Electrical resistivity showed the nonmonotonic temperature dependence with a sharp resistivity maximum, concomitant with a magnetization kink at 10 K, suggesting antiferromagnetic transition. In addition, magnetoresistance showed a large angular-dependent magnetoresistance. These results imply that carrier transport in the Bi2- square net could be in…
General expressions for the longitudinal and transverse resistivities of single-crystalline cubic and tetragonal ferromagnets are derived from a series expansion of the resistivity tensor with respect to the magnetization orientation. They are applied to strained (Ga,Mn)As films, grown on (001)- and (113)A-oriented GaAs substrates, where the resistivities are theoretically and experimentally studied for magnetic fields rotated within various planes parallel and perpendicular to the sample surface. We are able to model the measured angular dependences of the resistivities within the framework o…
Thin films of La5/8-yPryCa3/8MnO3 (y~0.4) have been grown on single crystal SrTiO3 (001) by RF sputtering. The structural and surface characterizations confirm the epitaxial nature of these film. However, the difference between the rocking curve of the (002) and (110) peaks and the presence of pits/holes in the step-terrace type surface morphology suggests high density of defect in these films. Pronounced hysteresis between the field cool cooled (FCC) and field cooled warming (FCW) magnetization measurements suggest towards the non-ergodic magnetic state. The origin of this nonergodicity could…
In this paper, we have studied the effect of strain relaxation on magneto-transport properties of La_0.7Ca_0.3MnO_3 epitaxial films (200 nm thick), which were deposited by pulsed laser deposition technique under identical conditions. All the films are epitaxial and have cubic unit cell. The amount of strain relaxation has been varied by taking three different single crystal substrates of SrTiO_3, LaAlO_3 and MgO. It has been found that for thicker films the strain gets relaxed and produces variable amount of disorder depending on the strength of strain relaxation. The magnitude of lattice rela…
The perovskite manganites of general formula RE_1-xAe_xMnO_3 (RE= rare earth,AE=Ca, Sr, Ba and Pb)have drawn considerable attention, especially following the discovery of colossal magnetoresistance (CMR). They exhibit extraordinary large magnetoresistance pronounced as CMR in the vicinity of insulator-metal/paramagnetic-ferromagnetic transition at a relatively large applied magnetic fields. However, for applied aspectes, occurence of significant CMR at low applied magnetic fields would be required. This review consists of of two sections: In the first section we have extensively reviewed the s…
The recent observation of Weyl fermions in the itinerant 4d ferromagnetic perovskite SrRuO3 points to this material being a good platform for exploring novel physics related to a pair of Weyl nodes in epitaxial heterostructures. In this letter, we report the thickness-dependent magnetotransport properties of ultra-high-quality epitaxial SrRuO3 films grown under optimized conditions on SrTiO3 substrates. Signatures of Weyl fermion transport, i.e., unsaturated linear positive magnetoresistance accompanied by a quantum oscillation having a π Berry phase, were observed in films with thicknesses as…
We present the magnetotransport properties of very thin (5 to 15 nm) single (Ga,Mn)As layers grown by low temperature molecular beam epitaxy. A lower (Ga,Mn)As thickness limit of 5 nm for the ferromagnetic phase and the dependence of the Curie temperature on (Ga,Mn)As thickness are determined from electrical transport measurements. The Curie temperature is determined to be 97 K for the thinnest ferromagnetic sample and is found to decrease for increasing layer thickness. A carrier density of ~7.1$\times10^{20}$ cm$^{-3}$ for the 5 nm thick (Ga,Mn)As layer is determined from Hall measurements. …
Pd$_{3}$Bi$_{2}$Se$_{2}$ has been proposed to be topologically non-trivial in nature. However, evidence of its non-trivial behavior is still unexplored. We report the growth and magneto-transport study of Pd$_{3}$Bi$_{2}$Se$_{2}$ thin films, revealing for the first time the contribution of two-dimensional (2D) topological surface states. We observe exceptional non-saturated linear magnetoresistance which results from Dirac fermions inhabiting the lowest Landau level in the quantum limit. The transverse magnetoresistance changes from a semi-classical weak-field $B^{2}$ dependence to a high-fiel…
We report on the exchange bias between antiferromagnetic and ferroelectric hexagonal YMnO3 epitaxial thin films sandwiched between a metallic electrode (Pt) and a soft ferromagnetic layer (Py). Anisotropic magnetoresistance measurements are performed to monitor the presence of an exchange bias field. When the heteroestructure is biased by an electric field, it turns out that the exchange bias field is suppressed. We discuss the dependence of the observed effect on the amplitude and polarity of the electric field. Particular attention is devoted to the role of current leakage across the ferroel…
We have measured the magnetotransport properties of a strained metallic V2O3 thin film. Most of the properties are similar to V2O3 single crystals that have been submitted to a large pressure. In addition, resistance noise analysis indicates that conductivity fluctuations are freezing out at T\approx 10K. Examination of a range of measurements leads to the conclusion that spins-configuration fluctuations dominate in the low temperature regime.
In this work we show the existence of closure domains in Fe$_{1-x}$Ga$_x$ thin films featuring a striped magnetic pattern and study the effect of the magnetic domain arrangement on the magnetotransport properties. By means of X-ray resonant magnetic scattering, we experimentally demonstrate the presence of such closure domains and estimate their sizes and relative contribution to surface magnetization. Magnetotransport experiments show that the behavior of the magnetoresistance depends on the measurement geometry as well as on the temperature. When the electric current ows perpendicular to the…
Since the prediction of spin-gapless semiconducting behaviour in the Heusler compound Mn$_2$CoAl, evidence of spin-gapless behaviour in thin films has typically been inferred from magnetotransport measurements. The spin gapless state is however fragile, and further, band structure calculations indicate that even a small amount of atomic disorder may destroy it. To explore the impact of disorder on the properties of Mn$_2$CoAl, we have undertaken an experimental study of the structural, magnetotransport and optical properties from the far infrared to the UV, on DC magnetron sputtered Mn$_2$CoAl…
Magnetotransport measurements have been performed on two-dimensional electron gases formed at InAs(110) surfaces covered with a submonolayer of Fe. Hysteresis in the magnetoresistance, a difference in remanent magnetoresistance between zero-field-cooling procedures and field-cooling procedures, and logarithmic time-dependent relaxation after magnetic field sweep are clearly observed at 1.7 K for a coverage of 0.42 monolayer. These features are associated with spin-glass ordering in the Fe film.
Motivated by observations of extreme magnetoresistance (XMR) in bulk crystals of rare-earth monopnictide (RE-V) compounds and emerging applications in novel spintronic and plasmonic devices based on thin-film semimetals, we have investigated the electronic band structure and transport behavior of epitaxial GdSb thin films grown on III-V semiconductor surfaces. The Gd3+ ion in GdSb has a high spin S=7/2 and no orbital angular momentum, serving as a model system for studying the effects of antiferromagnetic order and strong exchange coupling on the resulting Fermi surface and magnetotransport pr…
We report the optical, electrical transport, and magnetotransport properties of high quality oxygen deficient SrTiO3 (STO) single crystal film fabricated by pulsed laser deposition and reduced in the vacuum chamber. The oxygen vacancy distribution in the thin film is expected to be uniform. By comparing the electrical properties with oxygen deficient bulk STO, it was found that the oxygen vacancies in bulk STO is far from uniform over the whole material. The metal-insulator transition (MIT) observed in the oxygen deficient STO film was found to be induced by the carrier freeze-out effect. The …
MnBi2Te4 has recently been predicted and shown to be a magnetic topological insulator with intrinsic antiferromagnetic order. However, it remains a challenge to grow stoichiometric MnBi2Te4 films by molecular beam epitaxy (MBE) and to observe pure antiferromagnetic order by magnetometry. We report on a detailed study of MnBi2Te4 films grown on Si(111) by MBE with elemental sources. Films of about 100 nm thickness are analyzed in stoichiometric, structural, magnetic and magnetotransport properties with high accuracy. High-quality MnBi2Te4 films with nearly perfect septuple-layer structure are r…
We present a study on magnetotransport in films of the topological Dirac semimetal Cd$_{3}$As$_{2}$ doped with Sb grown by molecular beam epitaxy. In our weak antilocalization analysis, we find a significant enhancement of the spin-orbit scattering rate, indicating that Sb doping leads to a strong increase of the pristine band-inversion energy. We discuss possible origins of this large enhancement by comparing Sb-doped Cd$_{3}$As$_{2}$ with other compound semiconductors. Sb-doped Cd$_{3}$As$_{2}$ will be a suitable system for further investigations and functionalization of topological Dirac se…
We report the magnetotransport properties up to 7 T in the organic highly conducting Langmuir-Blodgett(LB) films formed by a molecular association of the electroactive donor molecule bis(ethylendioxy)tetrathiafulvalene (BEDO-TTF) and stearic acid CH$_3$(CH$_2$)$_{16}$COOH. We show the logarithmic decrease of dc conductivity and the negative transverse magnetoresistance at low temperature. They are interpreted in the weak localization of two-dimensional (2D) electronic system based on the homogeneous conducting layer with the molecular size thickness of BEDO-TTF. The electronic length with phas…
The magnetotransport properties of epitaxial films of Cd3As2, a paradigm three-dimensional Dirac semimetal, are investigated. We show that an energy gap opens in the bulk electronic states of sufficiently thin films and, at low temperatures, carriers residing in surface states dominate the electrical transport. The carriers in these states are sufficiently mobile to give rise to a quantized Hall effect. The sharp quantization demonstrates surface transport that is virtually free of parasitic bulk conduction and paves the way for novel quantum transport studies in this class of topological mate…
Hysteretic magnetoresistance (MR) is often used as a signature of ferromagnetism in conducting oxide thin films and heterostructures. Here, magnetotransport is investigated in a non-magnetic uniformly La-doped SrSnO3 film grown using hybrid molecular beam epitaxy. A 12 nm La:SrSnO3/2 nm SrSnO3/GdScO3 (110) film with insulating behavior exhibited a robust hysteresis loop in the MR at T < 5 K accompanied by an anomaly at ~ +/- 3 T at T < 2.5 K. Furthermore, MR with the field in-plane yielded a value exceeded 100% at 1.8 K. Using detailed temperature-, angle- and magnetic field-dependent resistan…
We report the spin current properties in a pigment-red (perylene-3,4,9,10-tetracarboxylic dianhydride: PTCDA) film prepared by thermal evaporation. In a palladium(Pd)/PTCDA/Ni80Fe20 tri-layer sample, a pure spin-current is generated in the PTCDA layer by the spin-pumping of the Ni80Fe20. The spin current is absorbed into the Pd layer, converted into a charge current with the inverse spin-Hall effect in Pd, and detected as an electromotive force. This is clear evidence for the pure spin current in a PTCDA film, and it is confirmed that a PTCDA film is useful not only as a robust protection laye…
We have grown VO2 thin films by laser ablation for electronic device applications. In obtaining the thin films of the pure VO2 phase, oxygen partial pressure is a critical parameter because vanadium oxides have several phases with the oxygen concentration. It is found that the pure VO2 films are epitaxially grown on Al2O3 substrate in the narrow ranges of 55-60 mTorr in an Ar+10% O2 ambient, and that the mixed phase films are synthesized when the deposition pressure slightly deviates from the optimum pressure. The (100) oriented VO2 films undergo an abrupt metal-insulator transition (MIT) with…
Recently, perovskite related BaPbO$_3$ has attracted attention due to its hidden topological properties and, moreover, has been used as a thin layer in heterostructures to induce two-dimensional superconductivity. Here we investigate the normal state electronic transport properties of thin films of BaPbO$_3$. Temperature and magnetic field dependent sheet resistances are strongly affected by two-dimensional quantum effects. Our analysis decodes the interplay of spin--orbit coupling, disorder, and electron--electron interaction in this compound. Similar to recently discussed topological materia…
Recently discovered Dirac and Weyl semimetals display unusual magnetoresistance phenomena, including a large, non-saturating, linear transverse magnetoresistance and a negative longitudinal magnetoresistance. The latter is often considered as evidence of fermions having a defined chirality. Classical mechanisms, due to disorder or non-uniform current injection, can however, also produce negative longitudinal magnetoresistance. Here, we report on magnetotransport measurements performed on epitaxial thin films of Cd3As2, a three-dimensional Dirac semimetal. Quasi-linear positive transverse magne…
Controlling the crystalline structure of Hafnium Zirconate and its epitaxial relationship to a semiconducting electrode has a high technological interest, as ferroelectric materials are key ingredients for emerging electronic devices. Using Pulsed Laser Deposition, a phase pure, ultra-thin film of HfZrO4 is grown epitaxially on a GaN (0001) / Si (111) template. Since standard microscopy techniques do not allow to determine with certitude the crystalline structure of the film due to the weak scattering of oxygen, differentiated differential phase contrast (DPC) Scanning Transmission Electron Mi…
The tunability of the chemical potential for a wide range encompassing the Dirac point is important for many future devices based on topological insulators. Here we report a method to fabricate highly efficient top gates on epitaxially grown (Bi_{1-x}Sb_x)2Te3 topological insulator thin films without degrading the film quality. By combining an in situ deposited Al2O3 capping layer and a SiN_x dielectric layer deposited at low temperature, we were able to protect the films from degradation during the fabrication processes. We demonstrate that by using this top gate, the carriers in the top surf…
We report the growth and magneto-transport studies of Pd$_{3}$Bi$_{2}$S$_{2}$ (PBS) thin films synthesized by pulsed laser deposition (PLD) technique. The magneto-transport study on pristine and post annealed films show the presence of more than one type of charge carrier with a carrier concentration in the range $0.6$ - $2.26~\times$ 10$^{21}$ cm$^{-3}$ and mobility in the range 0.96 - 1.73 $\times$ 10$^{2}$ cm$^{2}$/Vs. At low temperatures a logarithmic increase in conductivity is observed which indicates the presence of weak anti-localization (WAL). The magnetotransport data is analysed wit…
