La-doped ASnO3 (A = Ba, Sr) have great potential as advanced transparent oxide semiconductors due to their large optical bandgap and relatively high electron mobility. The bandgap of Ba1-xSrxSnO3 solid solution increases from 3.2 eV (BaSnO3) to 4.6 eV (SrSnO3) with x. However, the increase in the bandgap is accompanied by reductions in the electrical conductivity. The versatility in the changes in the electrical properties are not trivial, and the property optimization has been challenging. Here we propose a simple metric for quantifying the transport properties of ASnO3. We investigated the electron/thermal transport properties of Ba1-xSrxSnO3 solid solution films and their relationship with the lattice distortion. The results suggest that the all transport properties of Ba1-xSrxSnO3 are dominated by the lattice distortion. This phenomenon is attributed to the distortions in the SnO6 octahedron, which consists the conduction band.
Flexible fully transparent diodes with high rectification ratio of 5 e 8 are fabricated with all oxide materials at low temperature. The devices are optically transparent in visible spectra range and electrically robust while mechanically bending. Distinguished from other diodes, these diodes utilize diode-connected thin-film transistor architecture and follow field-effect principles.
High Frequency (GW) Post Processing of Transparent Conductive Oxide, ITO, leads to a significant improvement of Optical Transmission and Electrical Conduction. This is also true in case of ITO films in multilayered structures. The improvements happen without any affecting the lower layers (other layers of the multilayered Device). This Method is extremely selective and can process only the targeted film (layer).
Here we report on the preparation of transparent and flexible polymerized graphite oxide, which is composed of carbons with sp3-hybridized orbitals and a non-planar ring structure, and which demonstrates dispersion in its dielectric constant at room temperature. This frequency dependence renders the material suitable for creating miniaturized, flexible, and transparent variable capacitors, allowing for smaller and simpler integrated electronic devices. We discuss this polarizability in terms of space charge effects.
To clarify the electronic density of states (DOS) around the conduction band bottom for state of the art transparent amorphous oxide semiconductors (TAOSs), InGaZnO4 and In2MgO4, we fabricated TAOS-based transparent thin film transistors (TTFTs) and measured their gate voltage dependence of thermopower (S). TAOS-based TTFTs exhibit an unusual S behavior. The |S|-value abruptly increases, but then gradually decreases as Vg increases, clearly suggesting the anti-parabolic shaped DOS is hybridized with the original parabolic shaped DOS around the conduction band bottom.
The development of high performance transparent conducting oxides (TCOs) is critical to many technologies from transparent electronics to solar cells. While n-type TCOs are present in many devices, current p-type TCOs are not largely commercialized as they exhibit much lower carrier mobilities, due to the large hole effective masses of most oxides. Here, we conduct a high-throughput computational search on thousands of binary and ternary oxides and identify several highly promising compounds displaying exceptionally low hole effective masses (up to an order of magnitude lower than state of the…
We find that layered materials composed of various oxides of cations with $s^2$ electronic configuration, $XY_2$O$_4$, $X$=In or Sc, $Y$=Ga, Zn, Al, Cd and/or Mg, exhibit isotropic electron effective mass which can be obtained via averaging over those of the corresponding single-cation oxide constituents. This effect is due to a hybrid nature of the conduction band formed from the s-states of {\it all} cations and the oxygen p-states. Moreover, the observed insensitivity of the electron effective mass to the oxygen coordination and to the distortions in the cation-oxygen chains suggests that s…
Transparent oxides are essential building blocks to many technologies, ranging from components in transparent electronics, transparent conductors, to absorbers and protection layers in photovoltaics and photoelectrochemical devices. However, thus far, it has been difficult to develop p-type oxides with wide band gap and high hole mobility; current state-of-art transparent p-type oxides have hole mobility in the range of < 10 cm$^2$/Vs, much lower than their n-type counterparts. Using high-throughput computational screening to guide the discovery of novel oxides with wide band gap and high hole…
Combined first-principles and experimental investigations reveal the underlying mechanism responsible for a drastic change of the conductivity (by 10 orders of magnitude) following hydrogen annealing and UV-irradiation in a transparent oxide, 12CaO.7Al2O3, found by Hayashi et al. The charge transport associated with photo-excitation of an electron from H, occurs by electron hopping. We identify the atoms participating in the hops, determine the exact paths for the carrier migration, estimate the temperature behavior of the hopping transport and predict a way to enhance the conductivity by spec…
First-principles calculations of the mayenite-based oxide, [Ca12Al14O32]{2+}(2e-), reveal the mechanism responsible for its high conductivity. A detailed comparison of the electronic and optical properties of this material with those of the recently discovered novel transparent conducting oxide, H-doped UV-activated Ca12Al14O33, allowed us to conclude that the enhanced conductivity in [Ca12Al14O32]{2+}(2e-) is achieved by elimination of the Coulomb blocade of the charge carriers. This results in a transition from variable range hopping behavior with a Coulomb gap in H-doped UV-irradiated Ca12A…
We observe remarkably strong room temperature ferromagnetism (~1.5 Bohr Magneton/Mn) in optically transparent Mn(II)-doped indium tin oxide (ITO) films. The nanocrystalline films with average grain size 10-22 nm and thickness 150-350 nm are prepared by sol-gel coating technique on sodalime silica glass substrate. The ferromagnetic property is, of course, weak for films deposited on pure silica glass substrate. The structural parameters of the films appear to be governing the magnetic property strongly which vary appreciably depending on the substrate. The observation of room temperature ferrom…
We present a method for low temperature plasma-activated direct wafer bonding of III-V materials to Si using a transparent, conductive indium zinc oxide interlayer. The transparent, conductive oxide (TCO) layer provides excellent optical transmission as well as electrical conduction, suggesting suitability for Si/III-V hybrid devices including Si-based tandem solar cells. For bonding temperatures ranging from 100$^{\circ}$C to 350$^{\circ}$C, Ohmic behavior is observed in the sample stacks, with specific contact resistivity below 1 $Ω$cm$^2$ for samples bonded at 200$^{\circ}$C. Optical absorp…
Fulfillment of the promise of transparent electronics has been hindered until now largely by the lack of semiconductors that can be doped p-type in a stable way, and that at the same time present high hole mobility and are highly transparent in the visible spectrum. Here, a high-throughput study based on first-principles methods reveals four oxides, namely X2SeO2, with X = La, Pr, Nd, and Gd, which are unique in that they exhibit excellent characteristics for transparent electronic device applications-i.e., a direct band gap larger than 3.1 eV, an average hole effective mass below the electron…
Transparent conducting oxides (TCOs) play an essential role in modern optoelectronic devices through their combination of electrical conductivity and optical transparency. We review recent progress in our understanding of multi-component TCOs formed from solid-solutions of ZnO, In2O3, Ga2O3 and Al2O3, with a particular emphasis on the contributions of materials modelling, primarily based on Density Functional Theory. In particular, we highlight three major results from our work: (i) the fundamental principles governing the crystal structures of multi-component oxide structures including (In2O3…
Transparent conducting oxides (TCOs) are essential to many technologies including solar cells and transparent electronics. The search for high performance n- or p-type TCOs has mainly focused on materials offering transport through band carriers instead of small polarons. In this work, we break this paradigm and demonstrate using well-known physical models that, in certain circumstances, TCOs exhibiting transport by small polarons offer a better combination of transparency and conductivity than materials conducting through band transport. We link this surprising finding to the fundamentally di…
La-doped SrSnO3 (LSSO) is known as one of deep-ultraviolet (DUV)-transparent conducting oxides with an energy bandgap of ~4.6 eV. Since LSSO can be grown heteroepitaxially on more wide bandgap substrates such as MgO (Eg ~7.8 eV), LSSO is considered to be a good candidate as a DUV-transparent electrode. However, the electrical conductivity of LSSO films are below 1000 S cm^-1, most likely due to the low solubility of La ion in the LSSO lattice. Here we report that high electrically conducting (>3000 S cm^-1) LSSO thin films with an energy bandgap of ~4.6 eV can be fabricated by pulsed laser dep…
Based on genetic evolution algorithm, universal structure predictor USPEX assists to explore the most stable structure from Na+ substituting Ca2+ under variable concentration, for p type transparent conductive oxide application. The study finds 2 atoms of NaCa maintain the octahedral packing and cubic phase without the presence of oxygen vacancy, but the electron loss causes in fermi level entering into valence band, realizing p type TCOs character. While others still remain insulator character due to the compensation of oxygen vacancy. Applying Al3+ substituting Ca2+ achieve the fermi level i…
We use hybrid functionals and restricted self-consistent GW, state-of-the-art theoretical approaches for quasiparticle band structures, to study the electronic states of delafossite Cu(Al,In)O$_2$, the first p-type and bipolar transparent conductive oxides. We show that self-consistent GW gives remarkably wider band gaps than all the other approaches used so far. Accounting for polaronic effects in the GW scheme we recover a very nice agreement with experiments. Furthermore, the modifications with respect to the Kohn-Sham bands are strongly k-dependent, which makes questionable the common prac…
Although there are so many reports on the carrier effective mass (m*) of a transparent oxide semiconductor BaSnO3, it is almost impossible to know the intrinsic m* value because the reported m* values are scattered from 0.06 to 3.7 m0. Here we successfully clarified the intrinsic m* of BaSnO3, m*=0.40 0.01 m0, by the thermopower modulation clarification method. We also found the threshold of degenerate/non-degenerate semiconductor of BaSnO3; At the threshold, the thermopower value of both La-doped BaSnO3 and BaSnO3 TFT structure was 240 microvolt k-1, bulk carrier concentration was 1.4E19 cm-3…
Sn-doped In$_2$O$_3$ or ITO is the most widely used transparent conducting oxide. We use first-principles calculations to investigate the limitations to its transparency due to free-carrier absorption mediated by phonons or charged defects. We find that the main contribution to the phonon-assisted indirect absorption is due to emission (as opposed to absorption) of phonons, which explains why the process is relatively insensitive to temperature. The wavelength dependence of this indirect absorption process can be described by a power law. Indirect absorption mediated by charged defects or impu…
SrVO3 (SVO) is a prospective candidate to replace the conventional indium-tin-oxide (ITO) among the new transparent conducting oxide (TCO) generation. In this study, the structural, electrical, and optical properties of SVO thin films, both epitaxial and polycrystalline, are determined during and after heat treatments in the 150-250 °C range and under ambient environment in order to explore the chemical stability of this material. The use of these relatively low temperatures speeds up the natural ageing of the films, and allows to follow the evolution of their related properties. The combinati…
We discovered that La-doped BaSnO3 with the perovskite structure has an unprecedentedly high mobility at room temperature while retaining its optical transparency. In single crystals, the mobility reached 320 cm^2(Vs)^-1 at a doping level of 8x10^19 cm^-3, constituting the highest value among wide-band-gap semiconductors. In epitaxial films, the maximum mobility was 70 cm^2(Vs)^-1 at a doping level of 4.4x10^20 cm^-3. We also show that resistance of (Ba,La)SnO3 changes little even after a thermal cycle to 530 Deg. C in air, pointing to an unusual stability of oxygen atoms and great potential f…
A review is given for the recent progress of research in the field of oxide-based diluted magnetic semiconductor (DMS), which was triggered by combinatorial discovery of transparent ferromagnet. The possible advantages of oxide semiconductor as a host of DMS are described in comparison with conventional compound semiconductors. Limits and problems for identifying novel ferromagnetic DMS are described in view of recent reports in this field. Several characterization techniques are proposed in order to eliminate unidentified ferromagnetism of oxide-based DMS (UFO). Perspectives and possible devi…
The electronic properties of single- and multi-cation transparent conducting oxides (TCOs) are investigated using first-principles density functional approach. A detailed comparison of the electronic band structure of stoichiometric and oxygen deficient In$_2$O$_3$, $α$- and $β$-Ga$_2$O$_3$, rock salt and wurtzite ZnO, and layered InGaZnO$_4$ reveals the role of the following factors which govern the transport and optical properties of these TCO materials: (i) the crystal symmetry of the oxides, including both the oxygen coordination and the long-range structural anisotropy; (ii) the electroni…
Two-dimensional charge carrier accumulation at oxide heterointerfaces presents a paradigm shift for oxide electronics. Like a capacitor, interfacial charge buildup couples to an electric field across the dielectric medium. To prevent the so-called polar catastrophe, several charge screening mechanisms emerge, including polar distortions and interfacial intermixing which reduce the sharpness of the interface. Here, we examine how atomic intermixing at oxide interfaces affect the balance between polar distortions and electric potential across the dielectric medium. We find that intermixing moves…
In the current study easy method to synthesize C12A7 particles with cubic morphology was investigated for the application of Transparent Conducting Oxide layer in thinfilm solar cell. By self-combustion method with proper amount of urea addition, cubic and foamy structures of C12A7 were achieved at 950 °C and at 510 °C respectively. Pure C12A7 formation confirmed by P-XRD and growth mechanism of the cubes was also understood by SEM and FT-IR analysis. Further the band gap was measured 3.07 eV in case of 510 °C and 3.32 eV in case of 950 °C synthesized particles with the help of UV-Vis analysis…
Material properties depend sensitively on picometer scale atomic displacements introduced by local chemical fluctuations. Direct real-space, high spatial-resolution measurements of this compositional variation and corresponding distortion can provide new insights into materials behavior at the atomic scale. Using aberration corrected scanning transmission electron microscopy combined with advanced imaging methods, we observed atom column specific, picometer-scale displacements induced by local chemistry in a complex oxide solid solution. Displacements predicted from density functional theory w…
Recent experiments showed that unity-order index change in a transparent conducting oxide (TCO) can be achieved in a metal-oxide-semiconductor (MOS) structure by accumulation charge. However, the ultrathin (~5nm) accumulation layer and inherent absorption of TCOs impede the practical applications of this effect. Herein, we propose and explore a novel waveguide, namely "TCO-slot waveguide", which combines both the tunable property of a TCO and field enhancement of a slot waveguide. In particular, light absorption can be sharply enhanced when the slot dielectric constant is tuned close to zero. …
Transparent conducting oxides (TCOs) are essential to many technologies. These materials are doped (\emph{n}- or \emph{p}-type) oxides with a large enough band gap (ideally $>$3~eV) to ensure transparency. However, the high carrier concentration present in TCOs lead additionally to the possibility for optical transitions from the occupied conduction bands to higher states for \emph{n}-type materials and from lower states to the unoccupied valence bands for \emph{p}-type TCOs. The "second gap" formed by these transitions might limit transparency and a large second gap has been sometimes propose…
An ab initio structure optimization technique is newly developed to determine the valley line on a total-energy surface for zone-center distortions of ferroelectric perovskite oxides and is applied to barium titanate BaTiO3 and lead titanate PbTiO3. The proposed technique is an improvement over King-Smith and Vanderbilt's scheme [Phys. Rev. B 49, p.5828 (1994)] of evaluating total energy as a function of the amplitude of atomic displacements. The results of numerical calculations show that total energy can be expressed as a fourth-order function of the amplitude of atomic displacements in BaTi…
Transparent conducting oxides (TCOs) and transparent oxide semiconductors (TOSs) have become necessary materials for a variety of applications in the information and energy technologies, ranging from transparent electrodes to active electronics components. Perovskite barium stannate (BaSnO3), a new TCO or TOS system, is a potential platform for realizing optoelectronic devices and observing novel electronic quantum states due to its high electron mobility, excellent thermal stability, high transparency, structural versatility, and flexible doping controllability at room temperature. This artic…
The dielectric response of transparent conductive oxides near the bulk plasmon frequency is characterized by a refractive index less than vacuum. In analogy with x-ray optics, it is shown that this regime results in total external reflection and air-guiding of light. In addition, the strong reduction of the wavevector in the ITO below that of free space enables a new surface plasmon polariton mode which can be excited without requiring a prism or grating coupler. Ultrafast control of the surface plasmon polariton mode is achieved with a modulation amplitude reaching 20%.
We report herein that the carrier mobility of the 2%-La-doped BaSnO3 (LBSO) films on (001) SrTiO3 and (001) MgO substrates strongly depends on the thickness whereas it is unrelated to the lattice mismatch (+5.4% for SrTiO3, -2.3% for MgO). Although we observed large differences in the lattice parameters, the lateral grain size (~85 nm for SrTiO3, ~20 nm for MgO), the surface morphology and the density of misfit dislocations, the mobility increased almost simultaneously with the thickness in both cases and saturated at ~100 cm2 V-1 s-1, together with the approaching to the nominal carrier conce…
For the first time, this study shows that distortion in a crystal structure due to magnetic effect is possible in a lattice with extreme chemical disorder. The multicomponent equimolar transition metal oxide (ME TMO), (Co,Cu,Mg,Ni,Zn)O, which is a high entropy oxide, has been attracting a lot of attention due to its unique application potential in many fields including electrochemical energy storage. In the present investigation, nanocrystalline ME TMO was synthesised by three bottom up methods. The presence of distortion in the rocksalt crystal structure, revealed by X ray diffraction and Ram…
SrVO3 thin films with a high figure of merit for applications as transparent conductors were crystallized from amorphous layers using solid phase epitaxy (SPE). Epitaxial SrVO3 films crystallized on SrTiO3 using SPE exhibit a room temperature resistivity of 2.5 x 10-5 Ohms cm, a residual resistivity ratio of 3.8, and visible light transmission above 0.5 for a 60 nm-thick film. SrVO3 layers were deposited at room temperature using radio-frequency sputtering in an amorphous form and subsequently crystallized by heating in controlled gas environment. The lattice parameters and mosaic angular widt…
We investigate the structure--property relationships in $AB$O$_3$ perovskites exhibiting octahedral rotations and cooperative octahedral breathing distortions (CBD) using group theoretical methods. Rotations of octahedra are ubiquitous in the perovskite family, while the appearance of breathing distortions -- oxygen displacement patterns that lead to approximately uniform dilation and contraction of the $B$O$_6$ octahedra -- are rarer in compositions with a single, chemically unique $B$-site. The presence of a CBD relies on electronic instabilities of the $B$-site cations, either orbital degen…
Water dispersed graphene oxide sheets were used to prepare graphene-polyethylenglycol diacrylate resin composites by photopolymerization. It was found that graphene sheets undergo excellent morphological distribution within the resin system, giving rise to transparent composites with unaltered thermal properties with respect to the neat resin, that are electrically conductive at loading ratios as low as 0.02 %wt of graphene oxide . The proposed strategy based on photopolymerization provides an easy, energy-saving and environmental friendly technique that can find a wide application in coating …
Two-dimensional (2D) ferroelectricity has attracted extensive attention since its discovery in the monolayers of van der Waals materials. Here we show that 2D ferroelectricity induced by octahedral rotation distortion is widely present in the perovskite bilayer system through first-principles calculations. The perovskite tolerance factor plays a crucial role in the lattice dynamics and ground-state structure of the perovskite monolayers and bilayers, thus providing an important indicator for screening this hybrid improper ferroelectricity. Generally, the ferroelectric switching via an orthorho…
Flexible and transparent electronics presents a new era of electronic technologies. Ubiquitous applications involve wearable electronics, biosensors, flexible transparent displays, radio-frequency identifications (RFIDs), etc.Zinc oxide (ZnO) and related materials are the most commonly used inorganic semiconductors in flexible and transparent devices, owing to their high electrical performance, together with low processing temperature and good optical transparency.In this paper, we review recent advances in flexible and transparent thin-film transistors (TFTs) based on ZnO and related material…
Bismuth molybdate (BMO) is the simplest compound of aurivillius familywith a wide range of application as a tunable capacitor and sensor. The present article deals with the study of astructural, optical and catalytic property of tungsten doped Bismuth molybdate. The crystal structure is critically studied by Rietveld structural refinement method by using X-ray powder diffraction data. Raman scattering indicates that the structural distortion in BMO is mainly due to the rigid rotation of MoO6 octahedra. Due to the introduction of tungsten, the system experienced an increase in the band gap, whi…
Transparent oxide semiconductors (TOSs) showing both high visible transparency and high electron mobility have attracted great attention towards the realization of advanced optoelectronic devices. La-doped BaSnO3 (LBSO) is one of the most promising TOSs because its single crystal exhibits a high electron mobility. However, in the LBSO films, it is very hard to obtain high mobility due to the threading dislocations, which are originated from the lattice mismatch between the film and the substrate. Therefore, many researchers have tried to improve the mobility by inserting a buffer layer. While …
High-performance $p$-type transparent conducting materials (TCMs) must exhibit a rare combination of properties including high mobility, transparency and $p$-type dopability. The development of high-mobility/conductivity $p$-type TCMs is necessary for many applications such as solar cells, or transparent electronic devices. Oxides have been traditionally considered as the most promising chemical space to dig out novel $p$-type TCMs. However, non-oxides might perform better than traditional $p$-type TCMs (oxides) in terms of mobility. We report on a high-throughput (HT) computational search for…
The normal spinel oxide MgCr2O4 is cubic at room temperature while the normal spinel CuCr2O4 is tetragonal as a consequence of the Jahn-Teller nature of Cu2+ on the tetrahedral sites. Despite different end-member structures, complete solid solutions of Mg_{1-x}Cu_xCr2O4 can be prepared that display a first-order structural transition with composition x = 0.43 at room temperature. Reverse Monte Carlo analysis of total neutron scattering on data acquired between 300 K and 15 K on samples with x = 0.10, 0.20, and 0.43 provides unbiased local and average structure descriptions of the samples, incl…
Si doped ZnO has been reported to be a better conductor than pure ZnO. It is reported that carrier density increases and hence conductivity increases. However, the effect on optical transmission is yet not clear until our recent report [1]. Zn1-xSixO for x= 0, 0.013, 0.020 and 0.027 have been synthesized using sol-gel method (a citric acid-glycerol route) followed by solid state sintering. We found that there is a decrease in defect states due to Si doping. The correlation of strain to the decrement in vacancy sites is discussed in this report. In modern electronics and solar cell fabrication,…
Perovskite oxynitrides are a promising class of material for photocatalytic water-splitting due to their small band gaps and suitably aligned band edges. Recently, epitaxially strained oxynitrides started to attract interest due to the possibility to engineer the anion order and ferroelectric distortions. However, contrary to oxides there have been no studies on the band-gap evolution in oxynitrides with epitaxial strain. Here, we investigate, using density functional theory calculations, the influence of epitaxial strain on the band gap of two different oxynitrides and compare our results wit…
Corner-shared ABX$_3$ perovskites have long featured prominently in solid-state chemistry and condensed matter physics. Still, the joint understanding of their two main subgroups-halides and oxides-has not been fully developed. Indeed, unlike the case that compounds having a single repeated motif ("monomorphous"), certain cubic perovskites can manifest a non-thermal distribution of local motifs ("polymorphous networks"). Such intrinsic deformations can include positional degrees of freedom. Unlike thermal motion, such intrinsic distortions do not time-average to zero. The present study compare…
Combination of electrical conductivity and optical transparency in the same material -- known to be a prerogative of only a few oxides of post-transition metals, such as In, Sn, Zn and Cd -- manifests itself in a distinctive band structure of the transparent conductor host. While the oxides of other elements with $s^2$ electronic configuration, for example, Mg, Ca, Sc and Al, also exhibit the desired optical and electronic features, they have not been considered as candidates for achieving good electrical conductivity because of the challenges of efficient carrier generation in these wide-band…
Perovskites and related structures are renowned for technologically useful applications. The structural variations in perovskite crystals result in novel properties which can be regulated by external forces. The study attempts to regulate distortion of a perovskite compound LaFeO3 driven solely by reduced graphene oxide (RGO) and to demonstrate the effect using a critical parameter - electrochemical conductivity. A series of graphene concentration varied nanocomposites were synthesized via hydrothermal method. The crystal distortion is investigated using X-ray diffraction and Rietveld refineme…
Coupling Lattice Distortion and Cation Disorder to Control Li-ion Transport in Cation-Disordered Rocksalt Oxides
School of Materials Science and Engineering, Peking University（北京大学材料科学与工程学院）；Zhejiang Key Laboratory of All-Solid-State Battery, Eastern Institute of Technology（宁波东方理工大学全固态电池浙江省重点实验室）；Beijing Key Laboratory of Theory and Technology for Advanced Batteries Materials, Peking University（北京大学先进电池材料理论与技术北京市重点实验室）
An approach is presented to modify the WF of solution-processed sol-gel derived ZnOover an exceptionally wide range of more than 2.3 eV. This approach relies on the formation of dense and homogeneous self-assembled monolayers based on phosphonic acids with different dipole moments. This allows us to apply ZnO as charge selective bottom electrodes in either regular or inverted solar cell structures, using P3HT:PCBM as the active layer. These devices compete with or even exceed the performance of the reference cell on ITO/PEDOT:PSS. Our finding challenges the current view that bottom electrodes …
Perovskite transition-metal oxides are networks of corner-sharing octahedra whose tilts and distortions are known to affect their electronic and magnetic properties. We report calculations on a model interfacial structure to avoid chemical influences and show that the symmetry mismatch imposes an interfacial layer with distortion modes that do not exist in either bulk material, creating new interface properties driven by symmetry alone. Depending on the resistance of the octahedra to deformation, the interface layer can be as small as one unit cell or extend deep into the thin film.
Identification of high-reliability regions of machine learning predictions in materials science using transparent conducting oxides and perovskites as examples
Rapid Atmospheric Vapor Deposition of H:In2O3 Transparent Conducting Oxide Thin Films
University of Oxford（牛津大学）；University of Surrey（萨里大学）；National Taiwan University（台湾大学）；University of Cambridge（剑桥大学）；University of Manchester（曼彻斯特大学）；Sungkyunkwan University（成均馆大学）；Univ. Toulouse, CNRS, Toulouse INP, LGC（图卢兹大学，法国国家科学研究中心，图卢兹第三工业大学，化学实验室）
Transparent electronic materials are increasingly in demand for a variety of optoelectronic applications. BaSnO3 is a semiconducting oxide with a large band gap of more than 3.1 eV. Recently, we discovered that La doped BaSnO3 exhibits unusually high electrical mobility of 320 cm^2(Vs)^-1 at room temperature and superior thermal stability at high temperatures [H. J. Kim et al. Appl. Phys. Express. 5, 061102 (2012)]. Following that work, we report various physical properties of (Ba,La)SnO3 single crystals and films including temperature-dependent transport and phonon properties, optical propert…
