Electrons confined in semiconductor quantum dot arrays have both charge and spin degrees of freedom. The spin provides a well-controllable and long-lived qubit implementation. The charge configuration in the dot array is influenced by Coulomb repulsion, and the same interaction enables charge sensors to probe this configuration. Here we show that the Coulomb repulsion allows an initial charge transition to induce subsequent charge transitions, inducing a cascade of electron hops, like toppling dominoes. A cascade can transmit information along a quantum dot array over a distance that extends by far the effect of the direct Coulomb repulsion. We demonstrate that a cascade of electrons can be combined with Pauli spin blockade to read out spins using a remote charge sensor. We achieve > 99.9% spin readout fidelity in 1.7 $\mathrmμ$s. The cascade-based readout enables operation of a densely-packed two-dimensional quantum dot array with charge sensors placed at the periphery. The high connectivity of such arrays greatly improves the capabilities of quantum dot systems for quantum computation and simulation.
Radiofrequency cascade readout of coupled spin qubits
RIKEN（理化学研究所）；Quantum Motion（量子运动公司）；London Centre for Nanotechnology, University College London（伦敦大学学院纳米技术伦敦中心）；Department of Materials Sciences and Metallurgy, University of Cambridge（剑桥大学材料科学与工程冶金系）；IMEC（微电子研究中心）
Radio-frequency electron cascade in semiconductor quantum dots
Quantum Motion（量子运动）；Cavendish Laboratory, University of Cambridge（剑桥大学卡文迪许实验室）；London Centre for Nanotechnology, UCL（伦敦纳米技术中心，伦敦大学学院）；Research Laboratory of Electronics, Massachusetts Institute of Technology（麻省理工学院电子研究实验室）；Institute of Experimental and Applied Physics and Halle-Berlin-Regensburg Cluster of Excellence CCE, University of Regensburg（雷根斯堡大学实验与应用物理研究所及哈雷-柏林-雷根斯堡卓越集群CCE）；Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen（哥本哈根大学尼尔斯·玻尔研究所量子器件中心）；QuTech and Kavli Institute of Nanoscience, Delft University of Technology（代尔夫特理工大学QuTech和卡弗里纳米科学研究所）
Electron and nuclear spins associated with point defects in insulators are promising systems for solid state quantum technology. While the electron spin usually is used for readout and addressing, nuclear spins are exquisite quantum bits and memory systems. With these systems single-shot readout of nearby nuclear spins as well as entanglement aided by the electron spin has been shown. While the electron spin in this example is essential for readout it usually limits nuclear spin coherence. This has set of the quest for defects with spin-free ground states. Here, we isolate a hitherto unidentif…
We report the dispersive charge-state readout of a double quantum dot in the few-electron regime using the in situ gate electrodes as sensitive detectors. We benchmark this gate-sensing technique against the well established quantum point contact (QPC) charge detector and find comparable performance with a bandwidth of 10 MHz and an equivalent charge sensitivity of 6.3 x 10-3 e/ \sqrt Hz. Dispersive gate-sensing alleviates the burden of separate charge detectors for quantum dot systems and promises to enable readout of qubits in scaled-up arrays.
Single electron spins confined in silicon quantum dots hold great promise as a quantum computing architecture with demonstrations of long coherence times, high-fidelity quantum logic gates, basic quantum algorithms and device scalability. While single-shot spin detection is now a laboratory routine, the need for quantum error correction in a large-scale quantum computing device demands a quantum non-demolition (QND) implementation. Unlike conventional counterparts, the QND spin readout imposes minimal disturbance to the probed spin polarization and can therefore be repeated to extinguish measu…
Electron readout contrast enhancement in the parallel nuclear regime of an exchange-coupled donor spin qubit system
Research Laboratory of Electronics, Massachusetts Institute of Technology（麻省理工学院电子研究实验室）；Quantum Machines（量子机器公司）；Intel Corporation（英特尔公司）；School of Electrical Engineering and Telecommunications, UNSW Sydney（新南威尔士大学悉尼分校电气与电信工程学院）；ARC Centre of Excellence for Quantum Computation and Communication Technology（ARC量子计算与通信技术卓越中心）；Diraq Pty. Ltd.（Diraq有限公司）；School of Fundamental Science and Technology, Keio University（庆应义塾大学基础科学与技术学院）；School of Physics, University of Melbourne（墨尔本大学物理学院）；School of Science, RMIT University（皇家墨尔本理工大学理学院）
The size of silicon transistors used in microelectronic devices is shrinking to the level where quantum effects become important. While this presents a significant challenge for the further scaling of microprocessors, it provides the potential for radical innovations in the form of spin-based quantum computers and spintronic devices. An electron spin in Si can represent a well-isolated quantum bit with long coherence times because of the weak spin-orbit coupling and the possibility to eliminate nuclear spins from the bulk crystal. However, the control of single electrons in Si has proved chall…
Three key metrics for readout systems in quantum processors are measurement speed, fidelity and footprint. Fast high-fidelity readout enables mid-circuit measurements, a necessary feature for many dynamic algorithms and quantum error correction, while a small footprint facilitates the design of scalable, highly-connected architectures with the associated increase in computing performance. Here, we present two complementary demonstrations of fast high-fidelity single-shot readout of spins in silicon quantum dots using a compact, dispersive charge sensor: a radio-frequency single-electron box. T…
Efficient readout of individual electronic spins associated with atom-like impurities in the solid state is essential for applications in quantum information processing and quantum metrology. We demonstrate a new method for efficient spin readout of nitrogen-vacancy (NV) centers in diamond. The method is based on conversion of the electronic spin state of the NV to a charge state distribution, followed by single-shot readout of the charge state. Conversion is achieved through a spin-dependent photoionization process in diamond at room temperature. Using NVs in nanofabricated diamond beams, we …
We present the experimental observation of a large exchange coupling $J \approx 300$ $μ$eV between two $^{31}$P electron spin qubits in silicon. The singlet and triplet states of the coupled spins are monitored in real time by a Single-Electron Transistor, which detects ionization from tunnel-rate-dependent processes in the coupled spin system, yielding single-shot readout fidelities above 95%. The triplet to singlet relaxation time $T_1 \approx 4$ ms at zero magnetic field agrees with the theoretical prediction for $J$-coupled $^{31}$P dimers in silicon. The time evolution of the 2-electron s…
We investigate spin and charge dynamics of a quantum dot of phosphorus atoms coupled to a radio-frequency single-electron transistor (rf-SET) using full counting statistics. We show how the magnetic field plays a role in determining the bunching or anti-bunching tunnelling statistics of the donor dot and SET system. Using the counting statistics we show how to determine the lowest magnetic field where spin-readout is possible. We then show how such a measurement can be used to investigate and optimise single electron spin-readout fidelity.
Characterization of Tunnel Diode Oscillator for Qubit Readout Applications
RIKEN Center for Quantum Computing, RIKEN（RIKEN量子计算中心）；Department of Applied Sciences, Delft University of Technology（代尔夫特理工大学应用科学系）；Physics of Quantum Fluids and Crystals, B. Verkin Institute for Low Temperature Physics and Engineering of the National Academy of Sciences of Ukraine（乌克兰国家科学院B.维尔金低温物理与工程研究所量子流体与晶体物理部）；Institute of Physics, Kazan Federal University（喀山联邦大学物理研究所）；Cluster for Pioneering Research, RIKEN（RIKEN前沿研究集群）
Nuclear spins in semiconductors are leading candidates for quantum technologies, including quantum computation, communication, and sensing. Nuclear spins in diamond are particularly attractive due to their extremely long coherence lifetime. With the nitrogen-vacancy (NV) centre, such nuclear qubits benefit from an auxiliary electronic qubit, which has enabled entanglement mediated by photonic links. The transport of quantum information by the electron itself, via controlled transfer to an adjacent centre or via the dipolar interaction, would enable even faster and smaller processors, but optic…
Using single-shot charge detection in a GaAs double quantum dot, we investigate spin relaxation time T_1 and readout visibility of a two-electron singlet-triplet qubit following single-electron dynamic nuclear polarization (DNP). For magnetic fields up to 2 T, the DNP cycle is in all cases found to increase Overhauser field gradients, which in turn decrease T_1 and consequently reduce readout visibility. This effect was previously attributed to a suppression of singlet-triplet dephasing under a similar DNP cycle. A model describing relaxation after singlet-triplet mixing agrees well with exper…
A single nuclear spin holds the promise of being a long-lived quantum bit or quantum memory, with the high fidelities required for fault-tolerant quantum computing. We show here that such promise could be fulfilled by a single phosphorus (31P) nuclear spin in a silicon nanostructure. By integrating single-shot readout of the electron spin with on-chip electron spin resonance, we demonstrate the quantum non-demolition, electrical single-shot readout of the nuclear spin, with readout fidelity better than 99.8% - the highest for any solid-state qubit. The single nuclear spin is then operated as a…
We propose and demonstrate complete spin state readout of a two-electron system in a double quantum dot probed by an electrometer. The protocol is based on repetitive single shot measurements using Pauli spin blockade and our ability to tune on fast timescales the detuning and the interdot tunnel coupling between the GHz and sub-Hz regime. A sequence of three distinct manipulations and measurements allows establishing if the spins are in S, Tzero, Tplus or Tminus state. This work points at a procedure to reduce the overhead for spin readout, an important challenge for scaling up spin qubit pla…
We report the preparation and readout of multielectron high-spin states, a three-electron quartet, and a four-electron quintet, in a gate-defined GaAs/AlGaAs single quantum dot using spin filtering by quantum Hall edge states coupled to the dot. The readout scheme consists of mapping from multielectron to two-electron spin states and a subsequent two-electron spin readout, thus obviating the need to resolve dense multielectron energy levels. Using this technique, we measure the relaxations of the high-spin states and find them to be an order of magnitude faster than those of low-spin states. N…
Solid-state quantum computers require classical electronics to control and readout individual qubits and to enable fast classical data processing [1-3]. Integrating both subsystems at deep cryogenic temperatures [4], where solid-state quantum processors operate best, may solve some major scaling challenges, such as system size and input/output (I/O) data management [5]. Spin qubits in silicon quantum dots (QDs) could be monolithically integrated with complementary metal-oxide-semiconductor (CMOS) electronics using very-large-scale integration (VLSI) and thus leveraging over wide manufacturing …
We are pursuing a capability to perform time resolved manipulations of single spins in quantum dot circuits involving more than two quantum dots. In this paper, we demonstrate full counting statistics as well as averaging techniques we use to calibrate the tunnel barriers. We make use of this to implement the Delft protocol for single shot single spin readout in a device designed to form a triple quantum dot potential. We are able to tune the tunnelling times over around three orders of magnitude. We obtain a spin relaxation time of 300 microseconds at 10T.
We describe a method to control and detect in single-shot the electron spin state of an individual donor in silicon with greatly enhanced sensitivity. A silicon-based Single-Electron Transistor (SET) allows for spin-dependent tunneling of the donor electron directly into the SET island during the read-out phase. Simulations show that the charge transfer signals are typically Δq > 0.2 e - over an order of magnitude larger than achievable with metallic SETs on the SiO2 surface. A complete spin-based qubit structure is obtained by adding a local Electron Spin Resonance line for coherent spin cont…
We generalize the decay cascade model of charge capture statistics for a tunable-barrier non-adiabatic electron pump dominated by the backtunneling error at the quantum dot decoupling stage. The energy scales controlling the competition between the thermal and the dynamical mechanisms for accurate trapped charge quantization are discussed. Empirical fitting formula incorporating quantum dot re-population errors due to particle-hole fluctuations in the source lead is suggested and tested against an exactly solvable rate equation model.
The sensitivity of a THz hot-electron nanobolometer (nano-HEB) made from a normal metal is analyzed. Johnson Noise Thermometry (JNT) is employed as a readout technique. In contrast to its superconducting TES counterpart, the normal-metal nano-HEB can operate at any cryogenic temperature depending on the required radiation background limited Noise Equivalent Power (NEP). It does not require bias lines; 100s of nano-HEBs can be read by a single low-noise X-band amplifier via a filter bank channelizer. The modeling predicts that even with the sensitivity penalty due to the amplifier noise, an NEP…
Electric charge detection by atomic force microscopy (AFM) with single- electron resolution (e-EFM) is a promising way to investigate the electronic level structure of individual quantum dots (QD). The oscillating AFM tip modulates the energy of the QDs, causing single electrons to tunnel between QDs and an electrode. The resulting oscillating electrostatic force changes the resonant frequency and damping of the AFM cantilever, enabling electrometry with a single-electron sensitivity. Quantitative electronic level spectroscopy is possible by sweeping the bias voltage. Charge stability diagram …
