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基于单电子晶体管与低温CMOS的SiMOS量子点电荷读出的设计与建模

Design and Modeling of the Charge Readout of a SiMOS Quantum Dot with a Single Electron Transistor and CryoCMOS

Adam Quinn, Troy England, Andrew Li, Sharmila Mustari Nandita

arXiv 2608.28906首次发表:更新:

发表机构

Fermi National Accelerator Laboratory(费米国家加速器实验室)

机构由 AI 辅助整理,请以论文原文为准。

AI 中文总结

该研究针对SiMOS量子点自旋量子比特,设计出首款Quandarum项目的低温读出ASIC QNDR1,结合SET与低温CMOS,实现用于高能物理的多通道自旋量子比特探测器的读出方案。

AI 中文摘要

被困在SiMOS量子点中的单电子自旋量子比特是一种有望扩展至千或百万量子比特系统的技术,因其与成熟的CMOS制造工艺兼容。结合单电子晶体管(SET)与定制低温CMOS放大及数字化链的读出系统具有关键优势,可避免使用庞大的射频组件或室温互连。本文呈现优化的量子比特-SET低温CMOS接口的设计技术与仿真结果,最终完成QNDR1专用集成电路(ASIC)的设计,这是Quandarum项目下设计的首款低温读出ASIC,旨在开发用于高能物理的多通道自旋量子比特基探测器。

英文摘要

Single electron spin qubits trapped in SiMOS quantum dots are a promising technology for scaling to thousand- or million-qubit systems due to their compatibility with mature CMOS manufacturing processes. A readout system that combines a single electron transistor with a custom cryogenic CMOS amplification and digitization chain offers key advantages by avoiding the use of bulky RF components or room-temperature interconnects. We present design techniques and simulation results for an optimized qubit-SET cryoCMOS interface, culminating in the design of the QNDR1 ASIC, the first cryogenic readout ASIC designed under the Quandarum project, which targets the development of a many-channel spin qubit based detector for use in high energy physics.

论文原文

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