Anisotropic magnetoresistance (AMR), originating from spin-orbit coupling (SOC), is the sensitivity of the electrical resistance in magnetic systems to the direction of spin magnetization. Although this phenomenon has been experimentally reported for several nanoscale junctions, a clear understanding of the physical mechanism behind it is still elusive. Here we discuss a novel concept based on orbital symmetry considerations to attain a significant AMR of up to 95\% for a broad class of $π$-type molecular spin-valves. It is illustrated at the benzene-dithiolate molecule connected between two monoatomic nickel electrodes. We find that SOC opens, via spin-flip events at the ferromagnet-molecule interface, a new conduction channel, which is fully blocked by symmetry without SOC. Importantly, the interplay between main and new transport channels turns out to depend strongly on the magnetization direction in the nickel electrodes due to the tilting of molecular orbital. Moreover, due to multi-band quantum interference, appearing at the band edge of nickel electrodes, a transmission drop is observed just above the Fermi energy. Altogether, these effects lead to a significant AMR around the Fermi level, which even changes a sign. Our theoretical understanding, corroborated in terms of \textit{ab initio} calculations and simplified analytical models, reveals the general principles for an efficient realization of AMR in molecule-based spintronic devices.
Magnetoresistance and Hall coefficient of a graphene layer are investigated in the presence of a tilted magnetic field. We consider the graphene layer is assembled by either another graphene layer or a two-dimensional electron gas (2DEG) and an interlayer electron-electron interaction is modeled within Random Phase Approximation. Our calculated magnetoresistances show different interlayer screening effects between decoupled graphene-graphene and graphene-2DEG systems. We also analyze the dependence of dielectric materials as well as the distance between layers on magnetoresistances. The angle …
Bilayer two-dimensional electron systems formed by a thin barrier in the GaAs buffer of a standard heterostructure were investigated by magnetotransport measurements. In magnetic fields oriented parallel to the electron layers, the magnetoresistance exhibits an oscillation associated with the depopulation of the higher occupied subband and the field-induced transition into a decoupled bilayer. Shubnikov-de Haas oscillations in slightly tilted magnetic fields allow to reconstruct the evolution of the electron concentration in the individual subbands as a function of the in-plane magnetic field.…
Tilted off-plane magnetic anisotropy induces two unusual characteristic magnetotransport phenomena: extraordinary Hall effect in the presence of an in-plane magnetic field, and non-monotonic anisotropic magnetoresistance in the presence of a field normal to the sample plane. We show experimentally that these effects are generic, appearing in multiple ferromagnetic systems with tilted anisotropy introduced either by oblique deposition from a single source or in binary systems co-deposited from separate sources. We present a theoretical model demonstrating that these observations are natural res…
It is proposed that the presence of a tilted and anisotropic Dirac cone can be verified using the interlayer magnetoresistance in the layered Dirac fermion system, which is realized in quasi-two-dimensional organic compound α-(BEDT-TTF)_2 I_3. Theoretical formula is derived using the analytic Landau level wave functions and assuming local tunneling of electrons. It is shown that the resistivity takes the maximum in the direction of the tilt if anisotropy of the Fermi velocity of the Dirac cone is small. The procedure is described to determine the parameters of the tilt and anisotropy.
We present calculations of quantized conductance and magnetoresistance in nanosize point contacts between two ferromagnetic metals. When conductance is open for only one conduction electrons spin-projection, the magnitude of magnetoresistance is limited by the rate of conduction electron spin-reversal processes. For the case when both spin-channels contribute to the conductance we analyze the influence of the point contact cross-section asymmetry on the giant megnetoresistance. Recent experiments on magnetoresistance of magnetic point contacts are discussed in the framework of the developed th…
A clear gate voltage tunable weak antilocalization and a giant magnetoresistance of 400 percent are observed at 1.9 K in single layer graphene with an out-of-plane field. A large magnetoresistance value of 275 percent is obtained even at room temperature implying potential applications of graphene in magnetic sensors. Both the weak antilocalization and giant magnetoresistance persists far away from the charge neutrality point in contrast to previous reports, and both effects are originated from charged impurities. Interestingly, the signatures of Shubnikov-de Haas oscillations and the quantum …
We report on the electrical and magneto-transport properties of the contact formed between polycrystalline NiMnSb thin films grown using pulsed laser deposition (PLD) and n-type degenerate InSb (100) substrates. A negative giant magnetoresistance (GMR) effect is observed when the external magnetic field is parallel to the surface of the film and to the current direction. We attribute the observed phenomenon to magnetic precipitates formed during the magnetic film deposition and confined to a narrow layer at the interface. The effect of these precipitates on the magnetoresistance depends on the…
Giant Domain-Wall Hall Magnetoresistance in Magnetic Topological Semimetal
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences（中国科学院物理研究所）；School of Physical Sciences, University of Chinese Academy of Sciences（中国科学院大学物理科学学院）；Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University（华南师范大学）
This paper proposes a new model for Giant Magnetoresistance (GMR) and calculates its typical graph qualitatively. The model foundation is the microscopic mechanism in GMR, where the GMR effect can be explained by intrinsic and extrinsic potential. The potentials are spin-dependent. The potentials determine the transmission probability then it will give conductance value. Here, the multiple barrier potential model is proposed as the new GMR model. The transmission probability is determined using transfer matrix method. It was found that this model is fit qualitatively with the typical GMR graph…
We report on the combination of current-induced spin-orbit torques and giant magnetoresistance in a single device to achieve all-electrical write and read out of the magnetization. The device consists of perpendicularly magnetized TbCo and Co layers separated by a Pt or Cu spacer. Current injection through such layers exerts spin-orbit torques and switches the magnetization of the Co layer while the TbCo magnetization remains fixed. Subsequent current injection of lower amplitude senses the relative orientation of the magnetization of the Co and TbCo layers, which results in two distinct resis…
We investigate the spin-dependent electric and thermoelectric properties of ferromagnetic zigzag-graphyne nanoribbons (ZGNRs) using the density-functional theory combined with the non-equilibrium Green's function method. A giant magnetoresistance is obtained in the pristine even-width ZGNRs and can be as high as 10e6 %. However, for the doped systems, a large magnetoresistance behavior may appear in the odd-width ZGNRs rather than the even-width ones. This suggests that the magnetoresistance can be manipulated in a wide range by the dopants on edges of ZGNRs. Another interesting phenomenon is …
Spin-dependent transport in a full van der Waals (vdW) giant magnetoresistance (GMR) junctions with the structure of Fe3GeTe2/XTe2/Fe3GeTe2 (X = Pt, Pd) has been investigated by using first-principles calculations. The ballistic conductance, magnetoresistance (MR) and resistance-area product (RA) have been calculated in a current-perpendicular-to-plane (CPP) geometry. A giant magnetoresistance of around 2000% and RA less than 0.3 Ω μm2 have been found in the proposed vdW CPP GMR. In addition, the spin-orbit coupling effect on transport and anisotropy magnetoresistance (AMR) has also been inves…
This contribution reports on comparative studies on giant magnetoresistance (GMR) in carbon nanotubes (CNTs) and graphene nanoribbons of similar aspect ratios (i.e perimeter/length and width/length ratios, for the former and the latter, respectively). The problem is solved at zero temperature in the ballistic transport regime, by means of the Green's functions technique within the tight-binding model and with the so-called wide band approximation for electrodes. The GMR effect in graphene is comparable to that of CNTs, it depends strongly on the chirality and only slightly on the aspect ratio.…
Spin-dependent electronic transport properties of Fe-terminated zig-zag graphene nanoribbons (zGNR) have been studied using first-principles transport simulations. The spin configuration of proposed zGNR junction can be controlled with external magnetic field, and the tunneling junction show MR>1000 at small bias and is a perfect spin-filter by applying uniform external magnetic filed at small bias.
The metal-insulator transition temperature in CMR manganites has been altered and brought close to the room temperature by preparing La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ (LSMO)/ Nd$_{0.67}$Sr$_{0.33}$MnO$_{3}$ (NSMO) multilayers with ultra thin individual layers of LSMO and NSMO. The LSMO/NSMO multilayers with ultra thin individual layers of thickness of about $10Å$ exhibits 150% magnetoresistance at 270 K whereas LSMO/NSMO multilayers with moderate individual layer thickness of about $40Å$ each exhibits a mere 15% magnetoresistance at the same temperature. We have shown that the reduction in thick…
The giant transverse magnetoresistance is observed in the case of photoinduced nonequilibrium carriers in an asymmetric undoped system of three GaAs/AlGaAs quantum wells at room temperature. In a magnetic field of 75 kOe, the resistance of nanostructure being studied increases by a factor of 1.85. The magnetoresistance depends quadratically on the magnetic field in low fields and tends to saturation in high fields. This phenomenon is attributed to the rearrangement of the electron wave function in magnetic field. Using the fact that the incoherent part of the scattering probability for electro…
The semiconducting half-Heulser compound DyNiBi shows a negative giant magnetoresistance (GMR) below 200 K. Except for a weak deviation, this magnetoresistance scales roughly with the square of the magnetization in the paramagnetic state, and is related to the metal-insulator transition. At low temperature, a positive magnetoresistance is found, which can be suppressed by high fields. The magnitude of the positive magnetoresistance changes slightly with the amount of impurity phase.
We report the magnetotransport properties of self-assembled Co@CoO nanoparticle arrays at temperatures below 100 K. Resistance shows thermally activated behavior that can be fitted by the general expression of R exp{(T/T0)^v}. Efros-Shklovskii variable range hopping (v=1/2) and simple activation (hard gap, v=1) dominate the high and low temperature region, respectively, with a strongly temperature-dependent transition regime in between. A giant positive magnetoresistance of >1,400% is observed at 10K, which decreases with increasing temperature. The positive MR and most of its features can be …
We theoretically study the tunnel magnetoresistance (TMR) effect in (111)-oriented junctions Co/MgO/Co(111) and Ni/MgO/Ni(111). The Co-based junction is shown to have a TMR ratio over 2000$\%$, which is one order higher than that of the Ni-based one. The high TMR ratio is attributed to the interfacial resonance effect: The interfacial $d$-$p$ antibonding states are formed close to the Fermi level in the majority-spin channel and these states in both interfaces resonate with each other. This differs essentially from the conventional coherent tunneling mechanism of high TMR ratios in Fe(Co)/MgO/…
Carbon-based nanostructures and graphene, in particular, evoke a lot of interest as new promising materials for nanoelectronics and spintronics. One of the most important issue in this context is the impact of external electrodes on electronic properties of graphene nanoribbons (GNR). The present theoretical method is based on the tight-binding model and a modified recursive procedure for Green's functions. The results show that within the ballistic transport regime, the so called end-contacted geometry (of minimal GNR/electrode interface area), is usually more advantageous for practical appli…
Twisted bilayer graphene (TBG) exhibits fascinating correlation-driven phenomena like the superconductivity and Mott insulating state, with flat bands and a chiral lattice structure. We find by quantum transport calculations that the chirality leads to a giant unidirectional magnetoresistance (UMR) in TBG, where the unidirectionality refers to the resistance change under the reversal of the direction of the current or magnetic field. We point out that flat bands significantly enhance this effect. The UMR increases quickly upon reducing the twist angle and reaches about 20\% for an angle of 1.5…
We report on a highly efficient spin diode effect in an exchange-biased spin-valve giant magnetoresistance (GMR) strips. In such multilayer structures, symmetry of the current distribution along the vertical direction is broken and, as a result, a non-compensated Oersted field acting on the magnetic free layer appears. This field, in turn, is a driving force of magnetization precessions. Due to the GMR effect, resistance of the strip oscillates following the magnetization dynamics. This leads to rectification of the applied radio frequency current and induces a direct current voltage $V_{DC}$.…
Due to its two dimensional nature, ferromagnetism and charge doping can be induced by proximity and electric field effects in graphene. Taking advantage of these features, we propose an electrically engineered spin valve by combining two magnetic insulators (using EuO, EuS, or YIG) and three coating gates. Two top gates are used to cancel the heavy electron doping's in these magnets and one back gate is used to utilize the normal or half-metallic ferromagnetisms. We demonstrate that, when the second top gate is tuned to utilize the insulating or spin insulating states, huge giant magnetoresist…
We present an all-Heusler architecture which could be used as a rational design scheme for achieving high spin-filtering efficiency in the current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices. A Co2MnSi/Ni2NiSi/Co2MnSi trilayer stack is chosen as the prototype of such an architecture, of which the electronic structure and magnetotransport properties are systematically investigated by first principles approaches. Almost perfectly matched energy bands and Fermi surfaces between the all-Heusler electrode-spacer pair are found, indicating large interfacial spin-asymmetry, high …
Giant magnetoresistance (GMR) is a quantum mechanical magnetoresistance effect observed in thin film structures composed of alternating ferromagnetic and nonmagnetic layers. The effect manifests itself as a significant decrease (typically 10-80%) in electrical resistance in the presence of a magnetic field. The effect is exploited commercially by manufacturers of hard disk drives. The 2007 Nobel Prize in physics was awarded to Albert Fert and Peter Grunberg for the discovery of GMR.
Ag/Fe/Ag and Cr/Fe/Cr trilayers with a single $25 nm$ thick ferromagnetic layer exhibit giant magnetoresistance (GMR) type behavior. The resistance decreases for parallel and transversal magnetic field alignements with a Langevin-type magnetic field dependence up to B=12 T. The phenomenon is explained by a granular interface structure. Results on Fe/Ag multilayers are also interpreted in terms of a granular interface magnetoresistance.
According to Onsager's principle, electrical resistance $R$ of general conductors behaves as an even function of external magnetic field $B$. Only in special circumstances, which involve time reversal symmetry (TRS) broken by ferromagnetism, the odd component of $R$ against $B$ is observed. This unusual phenomenon, called odd-parity magnetoresistance (OMR), was hitherto subtle (< 2%) and hard to control by external means. Here, we report a giant OMR as large as 27% in edge transport channels of an InAs quantum well, which is magnetized by a proximity effect from an underlying ferromagnetic sem…
The evolution of information technology has been driven by the discovery of new forms of large magnetoresistance (MR), such as giant magnetoresistance (GMR) and tunnelling magnetoresistance (TMR) in magnetic multilayers. Recently, new types of MR have been observed in much simpler bilayers consisting of ferromagnetic (FM)/nonmagnetic (NM) thin films; however, the magnitude of MR in these materials is very small (0.01 ~ 1%). Here, we demonstrate that NM/FM bilayers consisting of a NM InAs quantum well conductive channel and an insulating FM (Ga,Fe)Sb layer exhibit giant proximity magnetoresista…
The recent discovery of magnetic Weyl semimetal Co3Sn2S2 opens up new avenues for research into the interactions between topological orders, magnetism, and electronic correlations. Motivated by the observations of large anomalous Hall effect because of large Berry curvature, we investigate another Berry curvature-induced phenomenon, the anomalous thermal Hall effect in Co3Sn2S2. We study it with and without strain, using a Wannier tight-binding Hamiltonian derived from first principles density functional theory calculations. We first identify this material as a tilted type-I Weyl semimetal bas…
(withdrawn)AC resistance of melt-spun granular magnetic Cu85Co15 ribbons was measured as a function of temperature in the range 5-300 K, magnetic field Hdc in the range -60 kOe to 60 kOe, and frequency in the range 1-1000 Hz. A sharp peak of zero-field resistance, which scales with frequency, and an associated isotropic giant AC magnetoresistance in small fields are observed around the temperature of collective freezing of interacting magnetic moments. Anomalous behavior of AC resistance in large fields (Hdc > 20 kOe) is observed in a much broader temperature range. This effect is not only fre…
Comments on "Giant Dielectric Response in the One-Dimensional Charge-Ordered Semiconductor (NbSe_{4})_{3}I" (D. Staresinic et al., Phys. Rev. Lett. 96, 046402 (2006)) and "Colossal Magnetocapacitance and Colossal Magnetoresistance in HgCr_{2}S_{4}" (S. Weber et al., Phys. Rev. Lett. 96, 157202 (2006))
We study the dependence of perpendicular-current magnetoresistance in magnetic multilayers on the angle between the magnetizations of the layers. This dependence varies with the thickness of one of the layers, and is different for multilayers with two and three magnetic layers. We derive a system of equations representing an extension of the two-current series resistor model, and show that the angular dependence of magnetoresistance gives information about the noncollinear spin-transport in ferromagnets.
Combining the Su-Schrieffer-Heeger model and the non-equilibrium Green's function formalism, we investigate the negative differential resistance effect in organic spintronics at low temperature and interprete it with a self-doping picture. A giant negative magnetoresistance exceeding 300% is theoretically predicted as the results of the negative differential resistance effects.
This article aims at giving a general presentation of spintronics, an important field of research developing today along many new directions in physics of condensed matter. We tried to present simply the physical phenomena involved in spintronics -- no equations but many schematics. We also described the applications of spintronics, those of today and those expected to have an important impact on the next developments of the information and communication technologies.
Cd3As2 is a newly booming Dirac semimetal with linear dispersion along all three momentum directions and can be viewed as 3D analog of graphene. As breaking of either time reversal symmetry or spatial inversion symmetry, the Dirac semimetal is believed to transform into Weyl semimetal with exotic chiral anomaly effect, while the experimental evidence of the chiral anomaly is still missing in Cd3As2. Here we report the magneto-transport properties of individual Cd3As2 nanowires. Large negative magnetoresistance (MR) with magnitude of -63% at 60 K and -11% at 300 K are observed when the magnetic…
The maximum current-perpendicular-to-plane giant magnetoresistance is searched for in magnetic multilayers made of Co, Ni, and Cu with disorder levels similar to those found in room temperature experiments. The calculation is made possible by a highly optimized linear response code, which uses the impurity averaged Green's function technique and a 9-band per spin tight binding model. Using simulated annealing, hundreds of different configurations of the atomic layers are examined to find a maximum GMR of 450% in ultrathin Ni/Cu superlattices.
Magnetization and magnetoresistivity studies of Fe/V (001) superlattices are reported. The first giant magnetoresistance peak with respect to the vanadium and iron layer thicknesses is investigated. The interlayer antiferromagnetic coupling strength is found to show a peak at a vanadium layer thickness of 13 atomic monolayers ($\approx$ 20 Å) with a full width at half maximum of about 2 monolayers. The antiferromagnetic coupling shows a maximum at an iron layer thickness of about 6 monolayers ($\approx$ 9 Å) for series of superlattices with vanadium thicknesses around 13 monolayers. The magnit…
Disorder-induced magnetoresistance has been reported in a range of solid metals and semiconductors, however, the underlying physical mechanism is still under debate because it is difficult to experimentally control. Liquid metals, due to lack of long-range order, offers an ideal model system where many forms of disorder can be deactivated by freezing the liquid. Here we report non-saturating magnetoresistance discovered in the liquid state of three metals: Ga, Ga-In-Sn and Bi-Pb-Sn-In alloys. The giant magnetoresistance appears above the respective melting points and has a maximum of 2500% at …
Using temperature-dependent magnetoresistance and magnetization measurements on Fe/Cr multilayers that exhibit pronounced giant magnetoresistance (GMR), we have found evidence for the presence of a glassy antiferromagnetic (GAF) phase. This phase reflects the influence of interlayer exchange coupling (IEC) at low temperature (T < 140K) and is characterized by a field-independent glassy transition temperature, Tg, together with irreversible behavior having logarithmic time dependence below a "de Almeida and Thouless" (AT) critical field line. At room temperature, where the GMR effect is still r…
The unidirectional magnetoresistance (UMR) is one of the most complex spin-dependent transport phenomena in ferromagnet/non-magnet bilayers, which involves spin injection and accumulation due to the spin Hall effect (SHE) or Rashba-Edelstein effect (REE), spin-dependent scattering, and magnon scattering at the interface or in the bulk of the ferromagnet. While UMR in metallic bilayers has been studied extensively in very recent years, its magnitude is as small as 10$^-$$^5$, which is too small for practical applications. Here, we demonstrate a giant UMR effect in a heterostructure of BiSb topo…
We report here the charge transport behavior in graphene nanojunctions in which graphene nanodots, with relatively long relaxation time, are interfaced with ferromagnetic electrodes. Subsequently we explore the effect of substitutional doping of transition metal atoms in zigzag graphene nanodots (z-GNDs) on the charge transport under non-collinear magnetization. Only substitutional doping of transition metal atoms in z-GNDs at certain sites demonstrates the spin filtering effect with a large tunnelling magnetoresistance as high as 700%, making it actually suitable for spintronic applications. …
We report on giant positive magnetoresistance effect observed in VOx thin films, epitaxially grown on SrTiO3 substrate. The MR effect depends strongly on temperature and oxygen content and is anisotropic. At low temperatures its magnitude reaches 70% in a magnetic field of 5 T. Strong electron-electron interactions in the presence of strong disorder may qualitatively explain the results. An alternative explanation, related to a possible magnetic instability, is also discussed.
Magnetization and magnetoresistance measurements are reported for antiferromagnetically coupled DyFe$_2$/YFe$_2$ multilayers in fields up to 23 T. We demonstrate that the formation of short exchange springs (~ 2 nm) in the magnetically soft YFe$_2$ layers results in a giant magneto-resistance as high as 32% in the spring region. It is shown that both the magnitude of the effect, and its dependence on magnetic field, are in good agreement with the theory of Levy and Zhang for giant magnetoresistance due to domain wall like structures.
We report room temperature giant baro-resistance ($\approx$128\%) in $Fe_{49}(Rh_{0.93}Pd_{0.07})_{51}$. With the application of external pressure and magnetic field the temperature range of giant baro-resistance ($\approx$600\% at 5K and 19.9 kbar and 8 Tesla) and magnetoresistance ($\approx$-85\% at 5K and 8 tesla) can be tuned from 5 K to well above room temperature. As the AFM state is stabilized at room temperature under external pressure, it shows giant room temperature magnetoresistance ($\approx$-55\%) with magnetic field. Due to coupled magnetic and latticel changes, the isothermal ch…
The results of dc magnetization, electrical and magnetoresistance and heat capacity measurements (2-300 K) on Tb7Rh3, crystallizing in Th7Fe3-type hexagonal structure, are reported. In this compound, magnetic ordering sets in around 90 K with additional transitions at low temperatures and the temperature coefficient of resistivity (R), dR/dT, is negative over a wide temperature range in the paramagnetic state. The present magnetization results reveal that this compound is apparently characterized by rich features in the magnetic-field-temperature phase diagram. A point of major emphasis is tha…
MBE-grown, 5 nm-thick annealed Ga0.95Mn0.05As films with Tc~90K demonstrate transition from metallic to insulating state below To~10K, where sheet resistances Rsh~h/e2 and both longitudinal Rxx and transverse Rxy components become comparable. Below metal-insulator transition we found giant anisotropic magnetoresistance (GAMR), which depends on orientation of magnetization to crystallographic axes and manifests itself in positive magnetoresistance near 50% for Rxx at T=1.7K, H//[110] crystallographic direction and parallel to current in contrast to smaller and negative magnetoresistance for H//…
We report tunnel magnetoresistance (TMR) ratios as high as 472% at room temperature and 804% at 5 K in pseudo-spin valve (SV) CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) annealed at 450oC, which is approaching the theoretically predicted value. By contrast, the TMR ratios for exchange-biased (EB) SV MTJs with a MnIr antiferromagnetic layer are found to drop when they are annealed at 450oC. Energy dispersive X-ray analysis shows that annealing at 450oC induces interdiffusion of Mn and Ru atoms into the MgO barrier and ferromagnetic layers in EB-SV MTJs. Mechanisms behind the different anne…
We theoretically studied spin dependent electron transport perpendicular-to-plain (CPP) in magnetic laminated multilayered structures by using Kubo formalism. We took into account not only bulk scattering, but the interface resistance due to both specular and diffuse reflection and also spin conserving and spin-flip processes. It was shown that spin-flip scattering at interfaces substantially reduces the value of GMR. This can explain the experimental observations that the CPP GMR ratio for laminated structures only slightly increases as compared to non-laminated ones despite lamination induce…
Antiferromagnets have been generating intense interest in the spintronics community, owing to their intrinsic appealing properties like zero stray field and ultrafast spin dynamics. While the control of antiferromagnetic (AFM) orders has been realized by various means, applicably appreciated functionalities on the readout side of AFM-based devices are urgently desired. Here, we report the remarkably enhanced anisotropic magnetoresistance (AMR) as giant as ~ 160% in a simple resistor structure made of AFM Sr2IrO4 without auxiliary reference layer. The underlying mechanism for the giant AMR is a…
Very strong magnetoresistance and a resistivity plateau impeding low temperature divergence due to insulating bulk are hallmarks of topological insulators and are also present in topological semimetals where the plateau is induced by magnetic field, when time-reversal symmetry (protecting surface states in topological insulators) is broken. Similar features were observed in a simple rock-salt-structure LaSb, leading to a suggestion of the possible non-trivial topology of 2D states in this compound. We show that its sister compound YSb is also characterized by giant magnetoresistance exceeding …
Recent studies on the electrical switching of tetragonal antiferromagnet (AFM) via N{é}el spin-orbit torque have paved the way for the economic use of antiferromagnetic materials. The most difficult obstacle that presently limits the application of antiferromagnetic materials in spintronics, especially in memory storage applications, could be the small and fragile magnetoresistance (MR) in the AFM-based nanostructure. In this study, we investigated the spin transports in Mn$_2$Au-based tunnel junctions based onthe first-principle scattering theory. Giant MRs more than $1000\%$ are predicted in…
We report the observation of colossal positive magnetoresistance (MR) in single crystalline, high mobility TaAs2 semimetal. The excellent fit of MR by a single quadratic function of the magnetic field B over a wide temperature range (T = 2-300 K) suggests the semiclassical nature of the MR. The measurements of Hall effect and Shubnikov-de Haas oscillations, as well as band structure calculations suggest that the giant MR originates from the nearly perfectly compensated electrons and holes in TaAs2. The quadratic MR can even exceed 1,200,000% at B = 9 T and T = 2 K, which is one of the largest …
We have studied the phase volume fraction related magnetoresistance (MR) across the first order martensite transformation (MT) of Ni44Cu2Mn43In11 alloy. Within the metastability of MT, an isothermal application of magnetic field converts the martensite into austenite. The field induced austenite phase fraction (fIA) at any temperature depends on the availability and instability of martensite phase fraction (fM ) at that temperature. This fIA is found to contribute most significantly to the observed giant MR while the contribution from pure martensite and austenite phase fraction is negligible.…
In the present work we reply to the Comment by Catalan and Scott (cond-mat/0607500) on two of our papers. This Comment has been rejected from publication in Physical Review Letters and, hence, our Reply is based on the cond-mat version.
