非均匀半导体DyNiBi的巨磁电阻和异常磁电阻
Giant magnetoresistance and extraordinary magnetoresistance in inhomogeneous semiconducting DyNiBi
摘要：
半导体半Heulser化合物DyNiBi在200 K以下表现出负巨磁电阻效应。除了一个弱的偏差，这种磁阻大致与顺磁状态下的磁化强度的平方成比例，并且与金属-绝缘体转变有关。在低温下，发现了一个正的磁电阻，它可以被抑制高场。正磁电阻的大小随杂质相的数量变化很小。
英文摘要：
The semiconducting half-Heulser compound DyNiBi shows a negative giant magnetoresistance (GMR) below 200 K. Except for a weak deviation, this magnetoresistance scales roughly with the square of the magnetization in the paramagnetic state, and is related to the metal-insulator transition. At low temperature, a positive magnetoresistance is found, which can be suppressed by high fields. The magnitude of the positive magnetoresistance changes slightly with the amount of impurity phase.
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