Magnetic impurities in metallic superconductors are important for both fundamental and applied sciences. In this study, we focused on dilute Mn-doped aluminum (AlMn) films, which are common superconducting materials used to make transition edge sensors (TES). We developed a multi-energy ion-implantation technique to make AlMn films. Compared with frequently used sputtering techniques, ion-implantation provides more precise and reliable control of the Mn doping concentration in the AlMn films.The ion implantation also enables us to quantitatively analyze the superconducting transition temperature curve as a function of the Mn doping concentration. We found that Mn dopants act as magnetic impurities and suppression of superconductivity is counteracted by the antiferromagnetic Ruderman Kittel Kasuya Yosida interaction among Mn dopants. The RKKY interaction can be tuned through defect engineering in the ion-implantation process and through post-implantation annealing.
The model of transient enhanced diffusion of ion-implanted As is formulated and the finite-difference method for numerical solution of the system of equations obtained is developed. The nonuniform distribution of point defects near the interface and more accurate description of arsenic clustering are simultaneously taking into account. Simulation of As diffusion during rapid annealing gives a reasonable agreement with the experimental data. Keywords: diffusion; clusters; ion implantation; arsenic; silicon PACS: 66.30.Jt
Tantalum nitride thin films have been grown by in situ nitrogen implantation of metallic tantalum at room temperature over the energy range of 0.5-5keV. X-ray photoelectron spectroscopy (XPS) and Factor Analysis (FA) have been used to characterise the chemical composition of the films. The number of the different Ta-N phases formed during nitrogen implantation, as well as their spectral shape and concentrations, have been obtained using principal component analysis (PCA) and iterative target transformation factor analysis (ITTFA), without any prior assumptions. According to FA results, the com…
Helium implantation in epitaxial thin films is a way to control the out-of-plane deformation independently from the in-plane strain controlled by epitaxy. In particular, implantation by means of a helium microscope allows for local implantation and patterning down to the nanometer resolution, which is of interest for device applications. We present here a study of bismuth ferrite (BiFeO3) films where strain was patterned locally by helium implantation. Our combined Raman, XRD and TEM study shows that the implantation causes an elongation of the BiFeO3 unit cell and ultimately a transition towa…
The impact of Bi implantation on the conductivity and the thermopower of amorphous chalcogenide films is investigated. Incorporation of Bi in Ge-Sb-Te and GeTe results in enhanced conductivity. The negative Seebeck coefficient confirms onset of the electron conductivity in GeTe implanted with Bi at a dose of 2x1016 cm-2. The enhanced conductivity is accompanied by defect accumulation in the films upon implantation as is inferred by using analysis of the space-charge limited current. The results indicate that native coordination defects in lone-pair semiconductors can be deactivated by means of…
The results of combined experimental and theoretical study of substitutional and clustering effects in Bi-doped TiO2 hosts (bulk and thin-film morphologies) are presented. Bi-doping of the bulk and thin-film titanium dioxide was made with help of pulsed ion-implantation (E(Bi+) = 30 keV, D = 1 * 1017 cm-2) without posterior tempering. The X-ray photoelectron spectroscopy (XPS) qualification (core-levels and valence bands) and Density-Functional Theory (DFT) calculations were employed in order to study the electronic structure of Bi-ion implanted TiO2 samples. According to XPS data obtained and…
We present a detailed investigation of the magnetic and magnetotransport properties of thin films of ferromagnetic Ga1-xMnxAs synthesized using ion implantation and pulsed-laser melting (II-PLM). The field and temperature-dependent magnetization, magnetic anisotropy, temperature-dependent resistivity, magnetoresistance, and Hall effect of II-PLM Ga1-xMnxAs films have all of the characteristic signatures of the strong p-d interaction of holes and Mn ions observed in the dilute hole-mediated ferromagnetic phase. The ferromagnetic and electrical transport properties of II-PLM films correspond to …
In this paper, we discuss the results of our study of the synthesis of endohedral iron-fullerenes. A low energy Fe+ ion beam was irradiated to C60 thin film by using a deceleration system. Fe+-irradiated C60 thin film was analyzed by high performance liquid chromatography and laser desorption/ionization time-of-flight mass spectrometry. We investigated the performance of the deceleration system for using a Fe+ beam with low energy. In addition, we attempted to isolate the synthesized material from a Fe+-irradiated C60 thin film by high performance liquid chromatography.
The magneto-transport properties of single proton-implanted ZnO and of Li(7\%)-doped ZnO microwires have been studied. The as-grown microwires were highly insulating and not magnetic. After proton implantation the Li(7\%) doped ZnO microwires showed a non monotonous behavior of the negative magneto-resistance (MR) at temperature above 150 K. This is in contrast to the monotonous NMR observed below 50 K for proton-implanted ZnO. The observed difference in the transport properties of the wires is related to the amount of stable Zn vacancies created at the near surface region by the proton implan…
We have used oxygen ions irradiation to generate controlled structural disorder in thin manganite films. Conductive atomic force microscopy CAFM), transport and magnetic measurements were performed to analyze the influence of the implantation process in the physical properties of the films. CAFM images show regions with different conductivity values, probably due to the random distribution of point defect or inhomogeneous changes of the local Mn3+/4+ ratio to reduce lattice strains of the irradiated areas. The transport and magnetic properties of these systems are interpreted in this context. …
An atomic and electronic structure of the bulk and thin-film morphologies of ZnO were modified using pulsed Bi-ion implantation (1x1017 cm-2 fluence, 70 min exposure under Bi-ion beam, EBi+ = 30 keV, pulsed ion-current density of not more than 0.8 mA/cm2 with a repetition rate of 12.5 Hz). The final samples were qualified by X-ray photoelectron core-level and valence band mapping spectroscopy applying ASTM materials science standard. The spectroscopy data obtained was discussed on the basis of DFT-models for Bi-embedding into ZnO host-matrices. It was established that in the case of direct Bi-…
Damage accumulation induced metal-insulator transition through ion implantation of ScN thin films
PPRIME Institute, CNRS, Université de Poitiers–ENSMA（普雷米研究所，法国国家科学研究中心，普瓦捷大学-国立高等机械工程学院）；Inorganic Chemistry, Department of Chemistry - Ångström, Uppsala University（乌普萨拉大学Ångström化学系无机化学）；Thin Film Physics Division, Department of Physics, Chemistry and Biology (IFM), Linköping University（林雪平大学物理、化学和生物学学院薄膜物理分部）
X-ray photoelectron spectroscopy (XPS) and resonant x-ray emission spectroscopy (RXES) measurements of pellet and thin film forms of TiO$_2$ with implanted Fe ions are presented and discussed. The findings indicate that Fe-implantation in a TiO$_2$ pellet sample induces heterovalent cation substitution (Fe$^{2+}\rightarrow$ Ti$^{4+}$) beneath the surface region. But in thin film samples, the clustering of Fe atoms is primarily detected. In addition to this, significant amounts of secondary phases of Fe$^{3+}$ are detected on the surface of all doped samples due to oxygen exposure. These experi…
Manipulating the strain induced poly-domains and phase transition in correlated oxide material are important for high performance devices fabrication. Though the electronic transport in the strained oxide film at macroscopic scales can be directly measured, the anisotropic electronic state and the controllable phase separation cross the insulator-to-metal transition within nanoscale size are still elusive. Here, we selected VO2 crystal film as a prototypical oxide and achieved the manipulation of anisotropy electronic phase separation via injecting He+ nanobeam into VO2 film at room temperatur…
The structure, composition and electrophysical characteristics of low-temperature silicon dioxide films under influence of various technology factors, such as ion implantation, laser irradiation, thermal and photonic annealing, have been studied. Silicon dioxide films have been obtained by monosilane oxidation using plasma chemical method, reactive cathode sputtering, and tetraethoxysilane pyrolysis. In the capacity of substrates, germanium, silicon, gallium arsenide and gallium nitride were used. Structure and composition of the dielectric films were analyzed by methods of infrared transmissi…
Formation of Ag and Au Plasmonic Nanoparticles by Ion Implantation in Ga$_2$O$_3$ thin films
INESC Microsystems and Nanotechnology（微电子与纳米技术研究所）；Institute for Plasmas and Nuclear Fusion, Instituto Superior Técnico, University of Lisbon（里斯本大学高等理工学院等离子体与核聚变研究所）；Université Caen Normandie, CEA, ENSICAEN, CNRS, Normandie Univ, CIMAP UMR6252（卡昂诺曼底大学）；Centre for Nuclear Sciences and Technologies, Instituto Superior Técnico, University of Lisbon（里斯本大学高等理工学院核科学与技术中心）；Department of Nuclear Science and Engineering, Instituto Superior Técnico, University of Lisbon（里斯本大学高等理工学院核科学与工程系）
Bulk and thin films ZnO and TiO2 samples were doped with Sn by pulsed ion implantation and studied by means of X-ray photoelectron core-level and valence band spectroscopy as well as density functional theory calculations for comprehensive study of the incorporation of Sn. XPS spectral analysis showed that isovalent Sn cation substitution occurs in both zinc oxide (Sn2+ -> Zn2+) and titanium dioxide (Sn4+ -> Ti4+) for bulk and film morphologies. For TiO2 films, the implantation also led to occupation of interstitials by doped ions, which induced the clustering of substituted and embedded Sn at…
Unexpected ferromagnetism has been observed in carbon doped ZnO films grown by pulsed laser deposition [Phys. Rev. Lett. 99, 127201 (2007)]. In this letter, we introduce carbon into ZnO films by ion implantation. Room temperature ferromagnetism has been observed. Our analysis demonstrates that (1) C-doped ferromagnetic ZnO can be achieved by an alternative method, i.e. ion implantation, and (2) the chemical involvement of carbon in the ferromagnetism is indirectly proven.
As a possible way of modifying the intrinsic properties of graphene we study the doping of graphene by embedded boron clusters with density functional theory. Cluster doping is technologically relevant as the cluster implantation technique can be readily applied to graphene. We find that B7 clusters embedded into graphene and graphene nanoribbons are structurally stable and locally metallize the system. This is done both by the reduction of the Fermi energy and by the introduction of boron states near the Fermi level. A linear chain of boron clusters forms a metallic "wire" inside the graphene…
Nowadays, making thermoelectric materials more efficient in energy conversion is still a challenge. In this work, to reduce the thermal conductivity and thus improve the overall thermoelectric performances, point and extended defects were generated in epitaxial 111-ScN thin films by implantation using argon ions. The films were investigated by structural, optical, electrical, and thermoelectric characterization methods. The results demonstrated that argon implantation leads to the formation of stable defects (up to 750 K operating temperature) were identified as interstitial type defect cluste…
Combination of neutron and X-ray reflectometry was used to study the vertical structure of 100 nm-thin copper films with implanted oxygen ions of energy E = [10-30] keV and doses D=[0.2-5.4]x$10^{16}$ $cm^{-2}$. The study shows that oxygen ion implantation with an energy of E = 30 keV leads to the formation of a 3 nm thick layer on the surface. Density and copper/oxygen stoichiometry of the observed surface layer are close to $Cu_2O$ oxide. We attribute the $Cu_2O$ oxide formation to highly mobilized copper atoms generated by stimulated ion implantation.
We demonstrate heavy and hyper doping of ZnO by a combination of gallium (Ga) ion implantation using a focused ion beam (FIB) system and post-implantation laser annealing. Ion implantation allows for the incorporation of impurities with nearly arbitrary concentrations, and the laser-annealing process enables dopant activation close to or beyond the solid-solubility limit of Ga in ZnO. We achieved heavily doped ZnO:Ga with free-carrier concentrations of ~10^21 cm^(-3), resulting in a plasma wavelength of 1.02 um, which is substantially shorter than the telecommunication wavelength of 1.55 um. T…
GaAs and GaAs based materials have outstanding optoelectronic properties and are widely used as light emitting media in devices. Many approaches have been applied to GaAs to generate luminescence at 0.88, 1.30, 1.55 um which are transmission windows of optical fibers. In this paper we present the photoluminescence at 1.30 um from deep level defects in GaAs treated by ion-implantation and flash lamp annealing (FLA). Such emission, which exhibits superior temperature stability, can be obtained from FLA treated virgin GaAs as well as doped GaAs. Indium-doping in GaAs can greatly enhance the lumin…
We demonstrate an enhancement of the spin-orbit coupling in silicon (Si) thin films by doping with bismuth (Bi), a heavy metal, using ion implantation. Quantum corrections to conductance at low temperature in phosphorous-doped Si before and after Bi implantation is measured to probe the increase of the spin-orbit coupling, and a clear modification of magnetoconductance signals is observed: Bi doping changes magnetoconductance from weak localization to the crossover between weak localization and weak antilocalization. The elastic diffusion length, phase coherence length and spin-orbit coupling …
Palladium-iron alloys produced by high-dose implantation of iron ions into epitaxial palladium films were investigated with the ferromagnetic resonance (FMR) and vibrating sample magnetometry (VSM) techniques. The samples reveal distinct multiple FMR responses depending on the dose of iron ion implantation. The post-implantation annealing at 770 K does not bring the implanted films to a homogeneous solid solution state, as might be expected from the Pd-Fe phase diagram. On the contrary, the system approaches a stable state composed of several magnetic phases. FMR spectra exhibit an angular beh…
Doping ferroelectric Hf0.5Zr0.5O2 with La is a promising route to improve endurance. However, the beneficial effect of La on the endurance of polycrystalline films may be accompanied by degradation of the retention. We have investigated the endurance - retention dilemma in La-doped epitaxial films. Compared to undoped epitaxial films, large values of polarization are obtained in a wider thickness range, whereas the coercive fields are similar, and the leakage current is substantially reduced. Compared to polycrystalline La-doped films, epitaxial La-doped films show more fatigue but there is no…
Erbium-doped materials can serve as spin-photon interfaces with optical transitions in the telecom C-band, making them an exciting class of materials for long-distance quantum communication. However, the spin and optical coherence times of Er3+ ions are limited by currently available host materials, motivating the development of new Er3+-containing materials. Here, we demonstrate the use of ion implantation to efficiently screen prospective host candidates, and show that disorder introduced by ion implantation can be mitigated through post-implantation thermal processing to achieve inhomogeneo…
Carrier-type reversal to enable the formation of semiconductor p-n junctions is a prerequisite for many electronic applications. Chalcogenide glasses are p-type semiconductors and their applications have been limited by the extraordinary difficulty in obtaining n-type conductivity. The ability to form chalcogenide glass p-n junctions could improve the performance of phase-change memory and thermoelectric devices and allow the direct electronic control of nonlinear optical devices. Previously, carrier-type reversal has been restricted to the GeCh (Ch=S, Se, Te) family of glasses, with very high…
Tuning the surface energy of fluorinated diamond-like carbon coatings via plasma immersion ion implantation plasma-enhanced chemical vapor deposition with 1,1,1,2-tetrafluoroethane
We report the observation of ferromagnetic resonance (FMR) and the determination of the magnetocrystalline anisotropy in (100)-oriented single-crystalline thin film samples of GaMnP with x=0.042. The contributions to the magnetic anisotropy were determined by measuring the angular- and the temperature-dependencies of the FMR resonance fields and by superconducting quantum interference device magnetometry. The largest contribution to the anisotropy is a uniaxial component perpendicular to the film plane; however, a negative contribution from cubic anisotropy is also found. Additional in-plane u…
Ferromagnetic ordering is reported in the post-annealed samples of Co doped n-GaN formed by Co+ implantation. A maximum Curie temperature ~ 250K is recorded for the sample with 8 atomic percent Co. Particle induced x-ray emission-channeling study confirmed the substitutional Co in Ga lattice site. Local atomic arrangement around magnetic impurities is also analyzed using Raman study. A disordered model with carrier mediated coupling of localized magnetic moments is made responsible for the observed ferromagnetic ordering.
An original modification of the standard Pulse Laser Deposition (PLD) method for preparing both undoped and indium doped zinc oxide (ZnO:In) thin films at low substrate temperature is proposed. This preparation method does not demand any further post-deposition annealing treatment of the grown films. The developed method allows to grow thin films at low substrate temperature that prevents them from the considerable loss of their intrinsic electrical and optical properties. The influence of deposition parameters on the electrical and optical parameters of the undoped and the indium doped ZnO th…
We develop a model describing the electrochemical conversion of an organic semiconductor (specifically, the active material in a light-emitting electrochemical cell) from the undoped non-conducting state to the doped conducting state. The model takes into account both strongly concentration-dependent mobility and diffusion for the electronic charge carriers and the Nernst equation in the doped conducting regions. It is demonstrated that the experimentally observed doping front progression in light-emitting electrochemical cells can be accurately described with this model.
We have observed room temperature ferromagnetism (FM) in In$_2$O$_3$ thin films doped with either 5 at.% Mn or Fe, prepared by pulsed laser deposition (PLD) at substrate temperatures ranging from 300 to 600$\,^{\circ}{\rm C}$. The dependence of saturation magnetization on grain size was investigated for both types of In$_2$O$_3$ films. It is revealed that, for the Mn-doped films, the magnetization was largest with small grains, indicating the importance of grain boundaries. In contrast, for Fe-doped films, the largest magnetization was observed with large grains.
Vanadium doped diamond-like carbon films prepared by unbalanced magnetron sputtering have been investigated by X-ray and ultraviolet photoelectron spectroscopy measurements for the purpose of revealing electronic structures including values of work function on the surfaces. In addition to these photoelectron measurements, X-ray diffraction measurements have been performed to characterize the crystal structures.
We investigated the origin of ferromagnetism in epitaxially grown Mn-doped Ge thin films. Using low-temperature molecular beam epitaxy, Mn-doped Ge films were successfully grown without precipitation of ferromagnetic Ge-Mn intermetallic compounds, such as Mn5Ge3. Magnetic circular dichroism measurements revealed that the epitaxially grown Mn-doped Ge films exhibited clear ferromagnetic behavior, but the Zeeman splitting observed at the critical points was not induced by the s,p-d exchange interactions. High-resolution transmission electron microscopy and energy dispersive X-ray spectroscopy an…
Implanted 3.25 keV Ar+ ions have been used to modify the in-plane bulk anisotropy in thin films of epitaxially grown Laves phase YFe2. The magneto optical Kerr effect, vibrating sample magnetometry and computational modeling have been used to show that the dominant source of anisotropy changes from magnetoelastic in as-grown samples to magnetocrystalline in ion implanted samples. This change occurs at a critical fluence of order 1017 Ar+ ions cm-2. The change in source of the anisotropy is attributed to a relaxation of the strain inherent in the epitaxially grown thin-films. Atomic force micro…
Doped films of organic small molecules are investigated with respect to their thermoelectric properties. A variety of hosts and dopants, for both n and p-doping, are compared. C$_{60}$ n-doped by Cr$_2$(hpp)$_4$ or o-MeO-DMBI-I are found to be the most promising material systems with a maximum of ZT$_\text{M}$ = 0.069 at T$_\text{M}$ = 40°C, assuming a doping-independent thermal conductivity due to phonon-based heat transport. This value is 16% of the current record reported for optimized devices employing the doped polymer PEDOT:PSS.
Single-phase perovskite 5 at.% Mn-doped and undoped polycrystalline BaTiO3 thin films have been grown under different oxygen partial pressures by pulsed laser deposition on platinum-coated sapphire substrates. Ferroelectricity is only observed for the Mn-doped and undoped BaTiO3 thin films grown under relatively high oxygen partial pressure. Compared to undoped BaTiO3, Mn-doped BaTiO3 reveals a low leakage current, increased dielectric loss, and a decreased dielectric constant. Ferromagnetism is seen on Mn-doped BaTiO3 thin films prepared under low oxygen partial pressure and is attributed to …
Ferromagnetism above room temperature was observed in Cr-doped hydrogenated amorphous silicon films deposited by rf magnetron-sputtering. Structure analysis reveals that films are amorphous without any detectable precipitates up to the solubility limit 16 atomic percentages of Cr. Experimental results suggest that hydrogenation has a dramatic influence on magnetic properties, electrical conductivity and carrier concentration in the thin films. Pronounced anomalous Hall effect and magnetization curve both suggest the origin of the ferromagnetism may arises from percolation of magnetic polarons.
The analytical solutions of the equations describing impurity diffusion due to migration of nonequilibrium impurity interstitials were obtained for the impurity redistribution during ion implantation at elevated temperatures and for diffusion from a doped epitaxial layer. The reflecting boundary condition at the surface of a semiconductor and the conditions of constant concentrations at the surface and in the bulk of it were used in the first and second cases, respectively. On the basis of these solutions hydrogen diffusion in silicon during high-fluence low-energy deuterium implantation and b…
In this paper we report the results about the synthesis and characterization of optimally doped La1-xNaxMnO3 thin films grown onto SrTiO3 (100), NdGaO3 (100) and NdGaO3 (110) for thickness ranging from 11 to 82 nm. The effect of substrate nature and orientation, film thickness and annealing procedure was investigated in order to optimize their magnetoresistance (MR). We obtained very smooth films displaying MR values greater than 70%, near to room temperature.
SrTiO$_3$ is a promising $n$-type oxide semiconductor for thermoelectric energy conversion. Epitaxial thin films of SrTiO$_3$ doped with both La and oxygen vacancies have been synthesized by pulsed laser deposition (PLD). The thermoelectric and galvanomagnetic properties of these films have been characterized at temperatures ranging from 300 K to 900 K and are typical of a doped semiconductor. Thermopower values of double-doped films are comparable to previous studies of La doped single crystals at similar carrier concentrations. The highest thermoelectric figure of merit ($ZT$) was measured t…
In the present investigation resistivity Vs temperature measurements have been performed for solgel prepared pure and Ni doped CdO (NDO) thin films. The semiconducting behavior i.e. negative temperature coefficient of resistivity (TCR) of pure CdO thin film through-out the whole temperature range can be attributed mainly due to concentration dependent thermally activation mechanism of the carriers. The semiconductor to metal transition (SMT) for NDO thin films has been elucidated via combined effect of involved grain boundaries, ionic impurities, phonon scattering and carrier activation.
In the present work, the Mn doped benzimidazole (BMZ) thin films were prepared by simple chemical bath deposition technique. The material was directly deposited as thin film on glass substrates and the metal concentration in the solution was varied in weight percentage in order to investigate the dopant effect on the properties of thin films. Similarly, the Mn doped BMZ films were deposited in different solution temperature to study the effect of deposition temperature on the properties of thin films. The PXRD and FT-IR spectroscopy are used to study the structural and the presence of function…
Perovskite oxide based thin film gas sensors have long been considered as potential alternatives to commonly investigated binary metal oxides based sensors. BiFeO3, which is a prototype of p-type perovskite based semiconducting oxides, has recently drawn significant attention for its promising gas sensing characteristics. In the present work, the hydrogen sensing characteristics of calcium doped BiFeO3 has been reported by varying the film thickness, doping concentration, operating temperature, and test gas concentration. The films were deposited on glass substrates by sol-gel route using spin…
In the last decade, transition-metal-doped ZnO has been intensively investigated as a route to room-temperature diluted magnetic semiconductors (DMSs). However, the origin for the reported ferromagnetism in ZnO-based DMS remains questionable. Possible options are diluted magnetic semiconductors, spinodal decomposition, or secondary phases. In order to clarify this question, we have performed a thorough characterization of the structural and magnetic properties of Co- and Ni-implanted ZnO single crystals. Our measurements reveal that Co or Ni nanocrystals (NCs) are the major contribution of the…
Abstract Applications of nitrogen-vacancy (NV) centers in diamond in quantum technology have attracted considerable attention in recent years. Deterministic generation of ensembles of NV centers can advance the research on quantum sensing, many-body quantum systems, multipartite entanglement and so on. Here we report the complete process of controlled generation of NV centers in diamond as well as their characterisation: growing diamond films through chemical vapor deposition (CVD), ion implantation and spectroscopic characterization of the defect centers using a confocal microscope. A microwa…
Electrodynamic properties of La-doped SrTiO3 thin films with controlled elemental vacancies have been investigated using optical spectroscopy and thermopower measurement. In particular, we observed a correlation between the polaron formation and thermoelectric properties of the transition metal oxide (TMO) thin films. With decreasing oxygen partial pressure during the film growth (P(O2)), a systematic lattice expansion was observed along with the increased elemental vacancy and carrier density, experimentally determined using optical spectroscopy. Moreover, we observed an absorption in the mid…
Hematite Fe$_2$O$_3$ seed layers are shown to constitute a pathway to prepare highly conductive transparent tin-doped indium oxide (ITO) thin films by room temperature magnetron sputtering. Conductivities of up to $σ= 3300\,{\rm S/cm}$ are observed. The improved conductivity is not restricted to the interface but related to an enhanced crystallization of the films, which proceeds in the rhombohedral phase.
A novel approach to the fabrication of GaNxAs1-x quantum dots and wires via ion beam patterning is presented. Photomodulated reflectance spectra confirm that N can be released from the As sublattice of an MBE-grown GaNxAs1-x film by amorphization through ion implantation followed by regrowth upon rapid thermal annealing (RTA). Amorphization may be achieved with a focused ion beam (FIB), which is used to implant Ga ions in patterned lines such that annealing produces GaAs regions within a GaNxAs1-x film. The profiles of these amorphized lines are dependent upon the dose implanted, and the film …
