β-Ga₂O₃中的离子注入：物理与技术
Ion implantation in \b{eta}-Ga2O3: physics and technology
AI总结：
本文综述β-Ga₂O₃离子注入研究现状，涵盖辐照损伤、掺杂层性能、理论计算与分析方法，介绍其在多种Ga₂O₃器件中的应用并分析器件特性，指出领域待解决的关键挑战。
摘要：
氧化镓，尤其是其热力学稳定的β-Ga₂O₃相，凭借超宽禁带、极高击穿电场等独特性质，成为当今科研与技术领域最受关注的材料之一，在电子学与光电子学中有着诸多应用。离子注入是这些领域的传统工艺方法，其公认的优势可极大推动基于Ga₂O₃的材料与器件的物理及技术快速发展。本文综述了β-Ga₂O₃中离子束注入的研究现状。重点关注离子辐照下损伤的实验研究结果，以及经离子注入掺杂的Ga₂O₃层的性能。简要介绍了杂质与缺陷参数的ab initio（从头算）理论计算结果，并概述了用于研究注入后氧化镓层的多种分析方法的物理原理。阐述了离子注入在金属氧化物场效应晶体管、肖特基势垒二极管、日盲紫外探测器等基于Ga₂O₃的器件开发中的应用，并对其已达到的特性参数值进行了系统分析。最后，讨论了这一科技领域有待攻克的最重要挑战。
英文摘要：
Gallium oxide and in particular its thermodynamically stable \b{eta}-Ga2O3 phase is within the most exciting materials in research and technology nowadays due to its unique properties, such as an ultra-wide band gap and a very high breakdown electric field, finding a number of applications in electronics and optoelectronics. Ion implantation is a traditional technological method used in these fields, and its well-known advantages can contribute greatly to the rapid development of physics and technology of Ga2O3-based materials and devices. Here, the current status of ion beam implantation in \b{eta}-Ga2O3 is reviewed. The main attention is paid to the results of experimental study of damage under ion irradiation and the properties of Ga2O3 layers doped by ion implantation. The results of ab initio theoretical calculations of the impurities and defects parameters are briefly presented, and the physical principles of a number of analytical methods used to study implanted gallium oxide layers are highlighted. The use of ion implantation in the development of such Ga2O3-based devices as metal oxide field effect transistors, Schottky barrier diodes, and solar-blind UV detectors, is described together with systematical analysis of the achieved values of their characteristics. Finally, the most important challenges to be overcome in this field of science and technology are discussed.
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