CMOS工艺中离子束诱导缺陷的研究方法
Ion-Beam-Induced Defects in CMOS Technology: Methods of Study
摘要：
离子注入是一种不考虑热力学因素而将杂质原子引入固体的非平衡掺杂技术。高于溶解度极限的亚稳合金的形成、器件制造中横向扩散过程的贡献最小化以及达到高浓度掺杂杂质的可能性可以被认为是离子注入的明显优点。由于离子注入具有良好的可控性、均匀性和剂量不敏感的相对精度，离子注入已经发展成为用于制造集成电路的主要掺杂技术。最初从粒子加速器技术发展而来的离子加速器工作在几十eV到几MeV的能量范围内（对应于几nm到几微米的深度）。离子注入的主要特征是在高能离子碰撞中形成点缺陷。半导体中非常微小的缺陷和杂质浓度会极大地改变其电学和光学特性。本章介绍了缺陷光谱学的方法来研究缺陷的起源和表征缺陷态密度在薄膜和半导体界面。所考虑的方法是正电子湮没光谱，电子自旋共振，和半导体器件的电特性的方法。
英文摘要：
Ion implantation is a non-equilibrium doping technique which introduces impurity atoms into a solid regardless of thermodynamic considerations. The formation of metastable alloys above the solubility limit, minimized contribution of lateral diffusion processes in device fabrication, and possibility to reach high concentrations of doping impurities can be considered as distinct advantages of ion implantation. Owing to excellent controllability, uniformity, and the dose insensitive relative accuracy ion implantation has grown to be the principal doping technology used in the manufacturing of integrated circuits. Originally developed from particle accelerator technology ion implanters operate in the energy range from tens eV to several MeV (corresponding to a few nm to several microns in depth). The main feature of ion implantation is the formation of point defects in the energetic ion collisions. Very minute concentrations of defects and impurities in semiconductors drastically alter their electrical and optical properties. This chapter presents methods of defect spectroscopy to study the defect origin and characterize the defect density of states in thin film and semiconductor interfaces. The methods considered are positron annihilation spectroscopy, electron spin resonance, and approaches for electrical characterization of semiconductor devices.
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