采用0.18 μ m Cmos技术的-55 ℃至170 ℃高线性电压基准电路
-55 degrees C to 170 degrees C High Linear Voltage References Circuitry in 0.18ìm Cmos Technology
摘要：
采用TSMC 0.18 $μ$ m CMOS工艺设计并实现了高线性基准电压源电路。先前的研究已经提出使用在弱反型区中操作的MOS晶体管来代替常规PTAT（与绝对温度成比例）电路中的双极器件。然而，由于现代深亚微米和纳米级CMOS工艺中的漏电流器件，这种解决方案在高温区往往存在线性度问题。该电路采用PTAT和IOAT（独立于绝对温度）两种基准电压源的温度互补技术，提高了线性度，产生了更稳定的IOAT基准电压源。仿真结果表明，在-55 ℃ ~ 170 ℃的较宽温度范围内，两种电路的R方均优于0.999。因此，设计了具有更宽温度范围的完全集成的温度传感器，并且以最小的努力容易地集成到现代片上系统设计中。
英文摘要：
High linear voltage references circuitry are designed and implemented in TSMC 0.18$μ$m CMOS technology. Previous research has proposed the use of MOS transistors operating in the weak inversion region to replace the bipolar devices in conventional PTAT(proportional to absolute temperature) circuits. However such solutions often have linearity problem in high temperature region due to the current leaking devices in modern deep sub micron and nano-scale CMOS technology. The proposed circuit utilized temperature complementation technique on two voltage references, PTAT and IOAT (independent of absolute temperature) references, to enhance the linearity and produce a more stable IOAT voltage reference. Base on the simulation results, the R-squares of both circuitries are better than 0.999 in a considerable wider temperature range from -55 degrees C to 170 degrees C. Thus, a fully integrated temperature sensor with wider temperature range is designed and easily to integrate to modern system-on-chip designs with minimal efforts.
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