The quantum oscillation is an important probe for the detection of a topological insulator(TI) surface states by means of electrical transport since the Shubnikov-de Haas oscillations allow to extract the Berry Phase which is the key test to detect the topological surface states. Here we have extracted the non trivial Berry Phase of 1$\%$ Sn doped strong TI $Sb_2Te_2Se$. We observed oscillation in Hall resistance as well and showed that this does not arise neither from the dominance of the SdH on Hall data nor this is the precursor of quantum Hall effect, rather this happens due to the pinning of the Fermi Level. Also The Hall oscillation has exactly 180$^\circ$ phase difference from SdH oscillation and this phase shift is independent of the magnetic field strength. It is argued that this unusual phenomenon stems from the predominance of the intra Landau Level scattering over the inter Landau Level scattering and it depends on the strength of the scattering potential. Thus our work paves the way of understanding the physics of scattering via quantum oscillations.
The momentum dependent splitting of spin-bands in an electronic system is known as the "Rashba effect". Systems with the "Rashba effect" possess a Dirac point in momentum space. An electron in a cyclotron orbit enclosing that Dirac point in the reciprocal space gains a "Berry phase". We report here the Shubnikov-de-Haas oscillations (SdH) at the conducting interface of EuO-KTaO$_3$ (KTO). Observed SdH oscillations suggest the presence of two Fermi surfaces. For both the Fermi surfaces, we have seen the presence of a non-trivial "Berry phase" suggesting that the surfaces enclose the "Dirac poin…
We have observed the quantum Hall effect (QHE) and Shubnikov-de Haas (SdH) oscillations in highly disordered graphene at magnetic fields up to 65 T. Disorder was introduced by hydrogenation of graphene up to a ratio H/C $\approx 0.1\%$. The analysis of SdH oscillations and QHE indicates that the topological part of the Berry phase, proportional to the pseudo-spin winding number, is robust against introduction of disorder by hydrogenation in large scale graphene.
We report the observation of two-dimensional Shubnikov-de Hass (SdH) oscillations in the topological insulator Tl$_{1-x}$Bi$_{1+x}$Se$_2$. Hall effect measurements exhibited electron-hole inversion in samples with bulk insulating properties. The SdH oscillations accompanying the hole conduction yielded a large surface carrier density of $n_{\rm{s}}=5.1 \times10^{12}$/cm$^2$, with the Landau-level fan diagram exhibiting the $π$ Berry phase. These results showed the electron-hole reversibility around the in-gap Dirac point and the hole conduction on the surface Dirac cone without involving the b…
The crossover from the semiclassical transport to quantum Hall effect is studied by examining a two-dimensional electron system in an AlGaAs/GaAs heterostructure. By probing the magneto-oscillations, it is shown that the semiclassical Shubnikov-de Haas (SdH) formulation can be valid even when the minima of the longitudinal resistivity approach zero. The extension of the applicable range of the SdH theory could be due to the damping effects resulting from disorder and temperature. Moreover, we observed plateau-plateau transition like behavior with such an extension. From our study, it is import…
Shubnikov-de Haas (SdH) oscillations, the most well-known magneto-oscillations caused by the quantization of electron energy levels in the presence of magnetic fields in two-dimensional (2D) electron systems, can be used to determine Fermi-surface properties and directly measure the Berry phase of the 2D systems. It is usually thought that transport measurements are required to measure the SdH oscillations. Contradicting this belief, we demonstrate that the SdH oscillations can be measured in graphene systems by carrying out scanning tunneling spectroscopy (STS) measurements. The energy-moment…
We report the growth of single-crystalline Bi2Se3 nanoribbons with lengths up to several millimeters via a catalyst-free physical vapor deposition method. Scanning transmission electron microscopy analysis reveals that the nanoribbons grow along the (1120) direction. We obtain a detailed characterization of the electronic structure of the Bi2Se3 nanoribbons from measurements of Shubnikov-de Haas (SdH) quantum oscillations. Angular dependent magneto-transport measurements reveal a dominant two-dimensional contribution originating from surface states and weak contribution from the bulk states. T…
Shubnikov-de Haas (SdH) oscillations under a dc current bias are experimentally studied on a Hall bar sample of single layer graphene. In dc resistance, the bias current shows the common damping effect on the SdH oscillations and the effect can be well accounted for by an elevated electron temperature that is found to be linearly dependent on the current bias. In differential resistance, a novel phase inversion of the SdH oscillations has been observed with increasing dc bias, namely we observe the oscillation maxima develop into minima and vice versa. Moreover, it is found that the onset bias…
The Berry phase of π in graphene is derived in a pedagogical way. The ambiguity of how to calculate this value properly is clarified. Its connection with the unconventional quantum Hall effect in graphene is discussed.
We have shown that the study of topological aspects of the underlying geometry in a ferromagnetic spin system gives rise to an intrinsic Berry phase. This real space Berry phase arises due to the spin rotations of conducting electrons which can be manifested as a further contribution in anomalous Hall effect.
Transverse current due to Berry curvature in phase space is formulated based on the Boltzmann equations with the semiclassical equations of motion for an electron wave packet. It is shown that the Hall effect due to the phase space Berry curvature is absent because the contributions from "anomalous velocity" and "effective Lorentz force" are completely cancelled out.
Anomalous Hall effect and spin Hall effect originate due to spin-orbit coupling that in the Kohn-Luttinger ${\bf k}\cdot{\bf p}$ formalism is represented by anomalous terms in the coordinate and velocity operators. Relation of these operators to the Berry curvature in the momentum space is presented for electrons in GaAs type semiconductors. For centrosymmetric semiconductors, transformational properties of Berry curvature are discussed.
The Berry phase origin is elaborated for the recent-discovered planar spin Hall effect which features current-induced spin polarization within the plane of the Hall deflection. We unravel a spin-repulsion vector governing the planar spin Hall effect, providing a transparent criteria for identifying intrinsic planar spin Hall materials. Finite spin-repulsion vector is found permitted in 13 crystalline point groups, revealing a big number of unexplored planar spin Hall systems. Our result can be used for the quantitative calculation of the planar spin Hall effect, facilitating further material h…
We consider Bloch electrons in the electromagnetic field and argue the relation between the Berry phase and the quantized Hall conductivity in three-dimension. The Berry phase we consider here is induced by the adiabatic change of the time-dependent vector potential. The relation has been shown in two-dimensional systems, and we generalize the relation in three-dimensional systems.
The Haldane model on a honeycomb lattice is a paradigmatic example of a system featuring quantized Hall conductivity in the absence of an external magnetic field, that is, a quantum anomalous Hall effect. Recent theoretical work predicted that the anomalous Hall conductivity of massive Dirac fermions can display Shubnikov-de Haas (SdH) oscillations, which could be observed in topological insulators and honeycomb layers with strong spin--orbit coupling. Here, we investigate the electronic transport properties of Chern insulators subject to high magnetic fields by means of accurate spectral expa…
Inversion symmetry breaking and spin-orbit coupling lead to valley and spin Hall effect in MoS2. Because of the large valley separation in momentum space, the valley index is expected to be robust. In this paper, quantum Hall effect in MoS2 originated from Berry curvature is analyzed after review of symmetry structure and spin-orbit coupling Hamiltonian of MoS2. Finally an expression and rough calculation is given for valley and spin Hall effect.
We have studied here the newly observed families of fractional quantum Hall states in the framework of Berry phase. It has been shown that this approach embraces in a unified way the whole spectrum of quantum Hall states with their various characteristic features. The newly observed states can be well accommodated within the primary sequence of FQH states and need not be considered as second generation FQH states as suggested by some authors.
The widely reported magnetoresistance oscillations in LaAlO3/SrTiO3 heterostructures have invariably been attributed to the Shubnikov-de Haas (SdH) effect, despite a pronounced inconsistency with low-field Hall resistance measurements. Here we report SdH-like resistance oscillations in quasi-1D electron waveguides created at the LaAlO3/SrTiO3 interface by conductive atomic force microscopy lithography. These oscillations can be directly attributed to magnetic depopulation of magnetoelectric subbands. Our results suggest that the SdH oscillations in 2D SrTiO3-based systems may originate from na…
Magneto-transport measurements are performed on two-dimensional GaAs electron systems to probe the quantum Hall (QH) effect at low magnetic fields. Oscillations following the Shubnikov-de Haas (SdH) formula are observed in the transition from the insulator to QH liquid when the observed almost temperature-independent Hall slope indicates insignificant interaction correction. Our study shows that the existence of SdH oscillations in such a transition can be understood based on the non-interacting model.
The $α$-$T_3$ model is characterized by a variable Berry phase that changes continuously from $π$ to $0$. We take advantage of this property to highlight the effects of this underlying geometrical phase on a number of physical quantities. The Hall quantization of the two limiting cases is dramatically different - a relativistic series is associated with a Berry phase of $π$ and a non-relativistic series is associated with the other limit. We study the quantization of the Hall plateaux as they continuously evolve from a relativistic to a non-relativistic regime. Additionally, we describe two ph…
Hall experiments in chiral magnets are often analyzed as the sum of an anomalous Hall effect, dominated by momentum-space Berry curvature, and a topological Hall effect, arising from the real-space Berry curvature in the presence of skyrmions, in addition to the ordinary Hall resistivity. This raises the questions of how one can incorporate, on an equal footing, the effects of the anomalous velocity and the real space winding of the magnetization, and when such a decomposition of the resistivity is justified. We provide definitive answers to these questions by including the effects of all phas…
The layer Hall effect describes electrons spontaneously deflected to opposite sides at different layers, which has been experimentally reported in the MnBi$_2$Te$_4$ thinfilms under perpendicular electric fields [Gao et al., Nature 595, 521 (2021)]. Here, we reveal a universal origin of the layer Hall effect in terms of the so-called hidden Berry curvature, as well as material design principles. Hence, it gives rise to zero Berry curvature in momentum space but nonzero layer-locked hidden Berry curvature in real space. We show that compared to that of a trivial insulator, the layer Hall effect…
Hot spot of Berry curvature is usually found at Bloch band anti-crossings, where the Hall effect due to the Berry phase can be most pronounced. With small gaps there, the adiabatic limit for the existing formulations of Hall current can be exceeded in a moderate electric field. Here we present a theory of non-adiabatic Hall effect, capturing non-perturbatively the across gap electron-hole excitations by the electric field. We find a general connection between the field induced electron-hole coherence and intrinsic Hall velocity. In coherent evolution, the electron-hole coherence can manifest a…
We report the magneto-transport properties and the electronic structure of TmSb. TmSb exhibits extremely large transverse magnetoresistance and Shubnikov-de Haas (SdH) oscillation at low temperature and high magnetic field. Interestingly, the split of Fermi surfaces induced by the nonsymmetric spin-orbit interaction has been observed from SdH oscillation. The analysis of the angle-dependent SdH oscillation illustrates the contribution of each Fermi surface to the conductivity. The electronic structure revealed by angle-resolved photoemission spectroscopy (ARPES) and first-principles calculatio…
We present an approach to the computation of the non-Abelian statistics of quasiholes in quantum Hall states, such as the Pfaffian state, whose wavefunctions are related to the conformal blocks of minimal model conformal field theories. We use the Coulomb gas construction of these conformal field theories to formulate a plasma analogy for the quantum Hall states. A number of properties of the Pfaffian state follow immediately, including the Berry phases which demonstrate the quasiholes' fractional charge, the abelian statistics of the two-quasihole state, and equal-time ground state correlatio…
The chirality of electronic Bloch bands is responsible for many intriguing properties of layered two-dimensional materials. We show that in bilayers of transition metal dichalcogenides (TMDCs), unlike in few-layer graphene and monolayer TMDCs, both intra-layer and inter-layer couplings give important contributions to the Berry-curvature in the $K$ and $-K$ valleys of the Brillouin zone. The inter-layer contribution leads to the stacking dependence of the Berry curvature and we point out the differences between the commonly available 3R type and 2H type bilayers. Due to the inter-layer contribu…
In few-layer (FL) transition metal dichalcogenides (TMDC), the conduction bands along the Gamma-K directions shift downward energetically in the presence of interlayer interactions, forming six Q valleys related by three-fold rotational symmetry and time reversal symmetry. In even-layers the extra inversion symmetry requires all states to be Kramers degenerate, whereas in odd-layers the intrinsic inversion asymmetry dictates the Q valleys to be spin-valley coupled. In this Letter, we report the transport characterization of prominent Shubnikov-de Hass (SdH) oscillations for the Q valley electr…
Transport measurements indicate strong oscillations in the Hall-,$R_{xy}$, and the diagonal-, $R_{xx}$, resistances and exhibit Hall plateaus at the lowest temperatures, in three-dimensional Highly Oriented Pyrolytic Graphite (HOPG). At the same time, a comparative Shubnikov-de Haas-oscillations-based Berry's phase analysis indicates that graphite is unlike the GaAs/AlGaAs 2D electron system, the 3D n-GaAs epilayer, semiconducting $Hg_{0.8}Cd_{0.2}Te$, and some other systems. Finally, we observe the transport data to follow $B\times dR_{xy}/dB \approx - ΔR_{xx}$. This feature is consistent wit…
We report the magnetotransport properties of HoSb, a semimetal with antiferromagnetic ground state. HoSb shows extremely large magnetoresistance (XMR) and Shubnikov-de Haas (SdH) oscillation at low temperature and high magnetic field. Different from previous reports in other rare earth monopnictides, kinks in $ρ(B)$ and $ρ_{xy}(B)$ curves and the field dependent resistivity plateau are observed in HoSb, which result from the magnetic phase transitions. The fast Fourier transform analysis of the SdH oscillation reveals the split of Fermi surfaces induced by the nonsymmetric spin-orbit interacti…
We propose the linear and nonlinear planar Hall effect (PHE) in tilted Weyl semimetals in the presence of an in-plane magnetic and electric field, where the field-induced Berry connection (FBC) plays a key role. We show that the PHE is ascribed to the quantum metric, distinct from the well-known chiral anomaly-induced PHE arising from the Berry curvature. Using a tilting vector to describe the model, we demonstrate the constrains on the linear and nonlinear PHE by the tilting directions. The linear PHE is intrinsic that is determined by the topological properties of energy bands, whereas the n…
It is well-known that a non-vanishing Hall conductivity requires time-reversal symmetry breaking. However, in this work, we demonstrate that a Hall-like transverse current can occur in second-order response to an external electric field in a wide class of time-reversal invariant and inversion breaking materials, at both zero and twice the optical frequency. This nonlinear Hall effect has a quantum origin arising from the dipole moment of the Berry curvature in momentum space, which generates a net anomalous velocity when the system is in a current-carrying state. We show that the nonlinear Hal…
There are known two distinct types of the integer quantum Hall effect. One is the conventional quantum Hall effect, characteristic of two-dimensional semiconductor systems, and the other is its relativistic counterpart recently observed in graphene, where charge carriers mimic Dirac fermions characterized by Berry's phase pi, which results in a shifted positions of Hall plateaus. Here we report a third type of the integer quantum Hall effect. Charge carriers in bilayer graphene have a parabolic energy spectrum but are chiral and exhibit Berry's phase 2pi affecting their quantum dynamics. The L…
The present paper corresponds to the third work of the author related to the magnetotransport properties concerning on the graphene systems. In the first one the integer quantum Hall effect in the monolayer graphene, (MG), MGIQHE, was analysed, (Hidalgo, 2014). The subject of the second one was the understanding of the fractional quantum Hall also in the MG, (MGFQHE), (Hidalgo, 2015), basing us in our model on the fractional quantum Hall effect in semiconductor quantum systems, Hidalgo (2013). The aim of the present work is the analysis of the integer quantum Hall effect observed in bilayer gr…
We have discussed here the polarization of quantum Hall states in the framework of the hierarchical analysis of IQHE and FQHE in terms of Berry phase. It is observed that we have fully polarized states for the filling factor $ν=1$ as well as $ν=\frac{1}{2m+1}$, $m$ being an integer. However, for $ν=p$ as well as $ν=\frac{p}{q}$, with $p>1$ and odd, $q$ odd we have partially polarized states and for $ν=\frac{p}{q}$, $p$ even, $q$ odd we have unpolarized states. It has been found that skyrmion excitations exist only for fully polarized states and for partially polarized and unpolarized states sk…
Recently, the magnetic topological insulator MnBi$_2$Te$_4$ emerged as a competitive platform to realize quantum anomalous Hall (QAH) states. We report a Berry-curvature splitting mechanism to realize the QAH effect in the disordered magnetic TI multilayers when switching from an antiferromagnetic order to a ferromagnetic order. We reveal that the splitting of spin-resolved Berry curvature, originating from the separation of the mobility edge during the magnetic switching, can give rise to a QAH insulator even \emph{without} closing the band gap. We present a global phase diagram, and also pro…
We point out a practical way to induce a finite charge Hall conductivity in graphene via an off-diagonal strain. Our conclusions are based on a general analysis and supported by numerical examples. The interplay between a substrate-induced gap and the strain is discussed. We show that the substrate-induced gap itself does not break the symmetry that maps one valley onto the other, and hence does not yield a net charge Hall effect. The net charge Hall conductivity is found to be sizable and should be observable in the presence of both the gap and the strain. The sign of the Hall conductivity ca…
We theoretically investigate the localization mechanism of the quantum anomalous Hall effect (QAHE) in the presence of spin-flip disorders. We show that the QAHE keeps quantized at weak disorders, then enters a Berry-curvature mediated metallic phase at moderate disorders, and finally goes into the Anderson insulating phase at strong disorders. From the phase diagram, we find that at the charge neutrality point although the QAHE is most robust against disorders, the corresponding metallic phase is much easier to be localized into the Anderson insulating phase due to the \textit{interchange} of…
The temperature and magnetic field dependences of the anomalous Hall effect (AHE) are studied in Mn delta-doped semiconductor heterostructures with a two-dimensional hole gas in a quantum well interacting with the Mn layer. The analysis of experimental data reveals four distinct temperature ranges differing in the behavior of AHE. The Mn layer induces an inhomogeneity of the hole gas leading to an interplay between the hopping and drift conductivities. It is shown that at sufficiently low temperatures, hopping conductivity favors the mechanisms of AHE related to the geometric (Berry-Pancharatn…
Photovoltaic Hall effect -- the Hall effect induced by intense, circularly-polarized light in the absence of static magnetic fields -- has been proposed in Phys. Rev. B 79, 081406R (2009) for graphene where a massless Dirac dispersion is realized. The photovoltaic Berry curvature (a nonequilibrium extension of the standard Berry curvature) is the key quantity to understand this effect, which appears in the Kubo formula extended to Hall transport in the presence of strong AC field backgrounds. Here we elaborate the properties of the photovoltaic curvature such as the frequency and field strengt…
Electrons moving in a Bloch band are known to acquire an anomalous Hall velocity proportional to the Berry curvature of the band which is responsible for the intrinsic linear Hall effect in materials with broken time-reversal symmetry. Here, we demonstrate that there is also an anomalous correction to the electron acceleration which is proportional to the Berry curvature dipole and is responsible for the Nonlinear Hall effect recently discovered in materials with broken inversion symmetry. This allows us to uncover a deeper meaning of the Berry curvature dipole as a nonlinear version of the Dr…
We analytically show that a gap is induced around the Dirac point in the electronic spectrum of a previously metallic nanotube, in the presence of electric and magnetic fields perpendicular to the tube axis. For realistic values of the fields, a gap of at least a few meV can appear. Despite the quasi-one dimensional nature of the system, the gapped state is associated with a non-zero topological invariant and supports a Hall effect. This is revealed when the flux through the tube is varied by one flux quantum, which leads to exactly one electron per spin being transported between the ends of t…
We report the experimental results from a dark study and a photo-excited study of the high mobility GaAs/AlGaAs system at large filling factors, $ν$. At large-$ν$, the dark study indicates several distinct phase relations ("Type-1", "Type-2", and "Type-3") between the oscillatory diagonal- and Hall- resistances, as the canonical Integral Quantum Hall Effect (IQHE) is manifested in the "Type-1" case of approximately orthogonal diagonal- and Hall resistance- oscillations. Surprisingly, the investigation indicates quantum Hall plateaus also in the "Type-3" case characterized by approximately "ant…
The spin-orbit interaction in heavy hole gas formed at $p$-doped semiconductor heterojunctions and electron gas at {\mbox SrTiO}${}_3$ surfaces is cubic in momentum. Here we report magnetotransport properties of k-cubic Rashba spin-orbit coupled two-dimensional fermionic systems. We study longitudinal (Shubnikov-de Haas (SdH) oscillations) and Hall component of the resistivity tensor analytically as well as numerically. The longitudinal resistivity shows beating pattern due to different SdH oscillation frequencies $ f_{\pm} $ for spin-up and spin-down fermions. We propose empirical forms of $ …
We have studied the magnetotransport properties of a Sb$_2$Se$_2$Te single crystal. Magnetoresistance (MR) is maximum when the magnetic field is perpendicular to the sample surface and reaches to a value of 1100\% at $B$=31 T with no sign of saturation. MR shows Shubnikov de Haas (SdH) oscillations above $B$=15 T. The frequency spectrum of SdH oscillations consists of three distinct peaks at $α$=32 T, $β$=80 T and $γ$=117 T indicating the presence of three Fermi surface pockets. Among these frequencies, $β$ is the prominent peak in the frequency spectrum of SdH oscillations measured at differe…
We study the ac Hall response induced by passage of dc transport current in two- and three-dimensional metals with gyrotropic point groups -- the gyrotropic Hall effect -- and consider the phenomenon of current-induced optical activity in noncentrosymmetric metals as a physical application of our theory. While the effect is expected to be present in single crystals of any noncentrosymmetric metal, we expect it to be strongest in enantiomorphic Weyl semimetals. Using the semiclassical kinetic equation approach we present several mechanisms underlying the gyrotropic Hall effect. Amongst them, th…
Carrier dynamics acquire a new character in the presence of Bloch-band Berry curvature, which naturally arises in gapped Dirac materials (GDMs). Here we argue that photoresponse in GDMs with small band gaps is dramatically enhanced by Berry curvature. This manifests in a giant and saturable Hall photoconductivity when illuminated by circularly polarized light. Unlike Hall motion arising from a Lorentz force in a magnetic field, which impedes longitudinal carrier motion, Hall photoconductivity arising from Berry curvature can boost longitudinal carrier transport. In GDMs, this results in a heli…
Spectral analysis of Shubnikov de Haas (SdH) oscillations of magnetoresistance and of Quantum Hall Effect (QHE) measured in quasi-2D highly oriented pyrolytic graphite (HOPG) [Phys. Rev. Lett. 90, 156402 (2003)] reveals two types of carriers: normal (massive) electrons with Berry phase 0 and Dirac-like (massless) holes with Berry phase pi. We demonstrate that recently reported integer- and semi-integer QHE for bi-layer and single-layer graphenes take place simultaneously in HOPG samples.
The chiral anomaly-induced negative magnetoresistance and non-trivial Berry phase are two fundamental transport properties associated with the topological properties of Weyl fermions. In this work, we report the quantum transport of TaP single crystals in magnetic field up to 31T. Through the analyses of our magnetotransport data, we show TaP has the signatures of a Weyl state, including light effective quasiparticle masses, ultrahigh carrier mobility, as well as negative longitudinal magnetoresistance. Furthermore, we have generalized the Lifshitz-Kosevich formula for Shubnikov-de Haas (SdH) …
Cadmium arsenide ($\rm Cd_3As_2$) is known for its inverted band structure and ultra-high electron mobility. It has been theoretically predicted and also confirmed by ARPES experiments to exhibit a 3D Dirac semimetal phase containing degenerate Weyl nodes. From magneto-transport measurements in high quality single crystals of $\rm Cd_3As_2$, a small effective mass $m^* \approx$ 0.05 $m_e$ is determined from the Shubnikov-de Haas (SdH) oscillations. In certain field orientations, we find a splitting of the SdH oscillation frequency in the FFT spectrum suggesting a possible lifting of the double…
We theoretically investigate the localization mechanism of quantum anomalous Hall Effect (QAHE) with large Chern numbers $\mathcal{C}$ in bilayer graphene and magnetic topological insulator thin films, by applying either nonmagnetic or spin-flip (magnetic) disorders. We show that, in the presence of nonmagnetic disorders, the QAHEs in both two systems become Anderson insulating as expected when the disorder strength is large enough. However, in the presence of spin-flip disorders, the localization mechanisms in these two host materials are completely distinct. For the ferromagnetic bilayer gra…
Negative longitudinal magnetoresistance, in the presence of an external magnetic field parallel to the direction of an applied current, has recently been experimentally verified in Weyl semimetals and topological insulators in the bulk conduction limit. The appearance of negative longitudinal magnetoresistance in topological semimetals is understood as an effect of chiral anomaly, whereas it is not well-defined in topological insulators. Another intriguing phenomenon, planar Hall effect - appearance of a transverse voltage in the plane of applied co-planar electric and magnetic fields not perf…
Owing to the coupling between open Fermi arcs on opposite surfaces, topological Dirac semimetals exhibit a new type of cyclotron orbit in the surface states known as Weyl orbit. Here, by lowering the carrier density in Cd3As2 nanoplates, we observe a crossover from multiple- to single-frequency Shubnikov-de Haas (SdH) oscillations when subjected to out-of-plane magnetic field, indicating the dominant role of surface transport. With the increase of magnetic field, the SdH oscillations further develop into quantum Hall state with non-vanishing longitudinal resistance. By tracking the oscillation…
We study the magnetotransport of high-mobility electrons in monolayer and bilayer MoSe$_2$, which show Shubnikov-de Haas (SdH) oscillations and quantum Hall states in high magnetic fields. An electron effective mass of 0.8$m_e$ is extracted from the SdH oscillations' temperature dependence; $m_e$ is the bare electron mass. At a fixed electron density the longitudinal resistance shows minima at filling factors (FFs) that are either predominantly odd, or predominantly even, with a parity that changes as the density is tuned. The SdH oscillations are insensitive to an in-plane magnetic field, con…
The accumulation of non-trivial geometric phases in a material's response is often a tell-tale sign of a rich underlying internal structure. Studying quantum oscillations provides one of the ways to determine these geometrical phases, such as Berry's phase, that play a central role in topological quantum materials. We report on magneto-transport measurements in ABA-trilayer graphene, the band structure of which is comprised of a weakly gapped linear Dirac band, nested within a trivial quadratic band. Here we show Shubnikov-de Haas (SdH) oscillations of the quadratic band shifted by a phase tha…
