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arXiv 2001.07358cond-mat.mtrl-sciphysics.app-ph
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Ab initio analysis of some Ge-based 2D nanomaterials

Ali Ghojavand, S. Javad Hashemifar, Mahdi Tarighi Ahmadpour, Alexander V. Shapeev, Amir Alhaji, Qaem Hassanzada

英文摘要:

The structural, electronic and dynamical properties of a group of 2D germanium-based compounds, including GeC, GeN, GeO, GeSi, GeS, GeSe, and germanene, are investigated by employing first-principles calculations. The most stable structure of each of these systems is identified after considering the most probable configurations and performing accurate phonon calculations. We introduce a new phase of germanene, which we name the tile germanene, which is significantly more stable than the known hexagonal germanene. We apply the modern modified Becke-Johnson (mBJ) and DFT1/2 schemes to obtain an accurate band structure for our selected 2D materials. It is seen that GeO and GeC exhibit the highest band gaps of more than 3 eV in this group of materials. Moreover, we argue that, in contrast to the semi-metallic nature of hexagonal germanene, the tile germanene is a very good conductor. The band edges of our semiconducting 2D materials are accurately aligned to the vacuum level to address the potential photocatalytic application of this system for water splitting and carbon dioxide reduction. The optical properties, including dielectric functions, refractive index, reflectivity, and Loss function of the samples are investigated in the framework of the Bethe-Salpeter approach.

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