A. N. Tait, S. M. Buckley, A. N. McCaughan, J. T. Chiles, S. Nam, R. P. Mirin, J. M. Shainline
Superconducting optoelectronic networks could achieve scales unmatched in hardware-based neuromorphic computing. After summarizing recent progress in this area, we report new results in cryogenic silicon photonic light sources, components central to these architectures.
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Low propagation loss in high confinement waveguides is critical for chip-based nonlinear photonics applications. Sophisticated fabrication processes which yield sub-nm roughness are generally needed to reduce scattering points at the waveguide interfaces in order to achieve ultralow propagation loss. Here, we show ultralow propagation loss by shaping the mode using a highly multimode structure to reduce its overlap with the waveguide interfaces, thus relaxing the fabrication processing requirements. Microresonators with intrinsic quality factors (Q) of 31.8 $\pm$ 4.4 million are experimentally…
We demonstrate fully crystalline, single-mode ultrahigh quality factor integrated microresonators comprising epitaxially grown Si$_{0.86}$Ge$_{0.14}$ waveguide cores with silicon claddings. These waveguides support resonances with internal $Q >10^8$ for both polarization modes, a nearly order-of-magnitude improvement over that seen in prior integrated Si photonics platforms. The maximum $Q$ is $1.71\pm0.06 \times 10^8$ for the transverse magnetic (TM) polarization mode, corresponding to a loss of $0.39\pm0.02$ dB/m. Together with silicon's strong Kerr nonlinearity and low losses in the optical…
We report the first demonstration of integrated electro-optic (EO) phase shifters based on racetrack microresonators on a 3C-silicon-carbide-on-insulator (SiCOI) platform working at near-infrared (NIR) wavelengths. By applying DC voltage in the crystalline axis perpendicular to the waveguide plane, we have observed optical phase shifts from the racetrack microresonators whose loaded quality (Q) factors are ~ 30,000. We show voltage length-product (V$π$${\cdot}$L$π$) of 118 V${\cdot}$cm, which corresponds to an EO coefficient r$_{41}$ of 2.6 pm/V. The SiCOI platform can be used to realize tunab…
Ultrahigh-Q chalcogenide micro-racetrack resonators
本研究利用欧拉曲线设计硫系微跑道谐振器，实现超高Q值、低损耗和非线性，为光子集成提供新平台。
Defect centers are promising candidates for waveguide-integrated silicon light sources. We demonstrate microresonator- and waveguide-coupled photoluminescence from silicon W~centers. Microphotoluminescence measurements indicate wavelengths on-resonance with resonator modes are preferentially coupled to an adjacent waveguide. Quality factors of at least 5,300 are measured, and free spectral ranges closely match expectation. The W~center phonon sideband can be used as a spectral diagnostic for a broader range waveguide-based devices on cryogenic silicon photonic platforms.
The silicon nitride integration platform has been successful at realizing extremely low waveguide losses across the visible to infrared and components including high performance lasers, filters, resonators, stabilization cavities, and optical frequency combs. Yet, progress towards implementing low loss, low power modulators in the silicon nitride platform, while maintaining the planar, wafer-scale process compatibility has been limited. Here we report a significant advance in integration of a piezo-electric (PZT) actuated micro-ring modulation in a fully-planar, wafer-scale silicon nitride pla…
We present waveguide integrated high-speed Si photodetector integrated with silicon nitride (SiN) waveguide on SOI platform for short reach data communication in 850 nm wavelength band. We demonstrate a waveguide couple Si pin photodetector responsivity of 0.44 A/W at 25 V bias. The frequency response of the photodetector is evaluated by coupling of a femtosecond laser source through SiN grating coupler of the integrated photodetector. We estimate a 3dB bandwidth of 14 GHz at 20 V bias, highest reported bandwidth for a waveguide integrated Si photodetector. We also present detailed optoelectro…
We have studied superconducting coplanar-waveguide (CPW) resonators fabricated from disordered (granular) films of Aluminum. Very high kinetic inductance of these films, inherent to disordered materials, allows us to implement ultra-short (200 $μ$m at a 5GHz resonance frequency) and high-impedance (up to 5 k$Ω$) half-wavelength resonators. We have shown that the intrinsic losses in these resonators at temperatures $\lesssim 250$ mK are limited by resonator coupling to two-level systems in the environment. The demonstrated internal quality factors are comparable with those for CPW resonators ma…
Low-loss photonic integrated circuits (PIC) and microresonators have enabled novel applications ranging from narrow-linewidth lasers, microwave photonics, to chip-scale optical frequency combs and quantum frequency conversion. To translate these results into a widespread technology, attaining ultralow optical losses with established foundry manufacturing is critical. Recent advances in fabrication of integrated Si3N4 photonics have shown that ultralow-loss, dispersion-engineered microresonators can be attained at die-level throughput. For emerging nonlinear applications such as integrated trav…
A High-Speed Waveguide Integrated InSe Photodetector on SiN Photonics for NIR Applications
本研究将90 nm厚多层InSe集成在SiN波导上制备高速光电探测器，在近红外976 nm波段实现了低暗电流、高响应度和85 MHz 3 dB带宽，可应用于短距光互连等领域。
Broadband Waveguide-Coupled Photodetectors in a Submicrometer-Wavelength Silicon Photonics Platform
本文报道在代工厂制造的短波长硅光子学平台中单片集成的波导耦合光电探测器，两种变体覆盖400–955 nm，并实现高效率、低暗电流、18 GHz带宽及374 GHz增益带宽积。
Ultra-wideband Waveguide-coupled Photodiodes Heterogeneously Integrated on a Thin-film Lithium Niobate Platform
本文在薄膜铌酸锂平台上异质集成InP/InGaAs改进型单行载流子光电二极管，实现了110 GHz的创纪录3-dB带宽和0.4 A/W响应度，为大规模高性能TFLN光子集成电路提供了关键器件支撑。
Waveguide-Coupled Mid-Infrared GeSn Membrane Photodetectors on Silicon-on-Insulator
本研究通过转印将应变弛豫 GeSn 薄膜集成于绝缘体上硅波导，实现室温至 3.1 μm 的中红外探测器，并验证其高性能与可扩展制造。
Electrons and photons offer complementary strengths for information processing. Photons are excellent for communication, while electrons are superior for computation and memory. Cognition requires distributed computation to be communicated across the system for information integration. We present reasoning from neuroscience, network theory, and device physics supporting the conjecture that large-scale cognitive systems will benefit from electronic devices performing synaptic, dendritic, and neuronal information processing operating in conjunction with photonic communication. On the chip scale,…
InP optical amplifiers with Euler U-bend waveguide geometry for low-loss flip-chip hybrid integration
本文开发了具有欧拉U形弯曲波导的InP光放大器，端口位于同一端面，简化混合集成对准，降低耦合损耗，并展示了0.56 dB的低弯曲损耗及集成试验结果。
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