We study the effect of strain on the physical properties of the nitrogen antisite-vacancy pair in hexagonal boron nitride ($h$-BN), a color center that may be employed as a quantum bit in a two-dimensional material. With group theory and ab-initio analysis we show that strong electron-phonon coupling plays a key role in the optical activation of this color center. We find a giant shift on the zero-phonon-line (ZPL) emission of the nitrogen antisite-vacancy pair defect upon applying strain that is typical of $h$-BN samples. Our results provide a plausible explanation for the experimental observation of quantum emitters with similar optical properties but widely scattered ZPL wavelengths and the experimentally observed dependence of the ZPL on the strain.
We demonstrate theoretically how, by imposing epitaxial strain in a ferroelectric perovskite, it is possible to achieve a dynamical control of phonon propagation by means of external electric fields, which yields a giant electrophononic response, i.e. the dependence of the lattice thermal conductivity on external electric fields. Specifically, we study the strain-induced manipulation of the lattice structure and analyze its interplay with the electrophononic response. We show that tensile biaxial strain can drive the system to a regime where the electrical polarization can be effortlessly rota…
We report the strong dependence of resistance on uniaxial strain in monolayer WSe2 at various temperatures, where the gauge factor can reach as large as 2400. The observation of strain-dependent resistance and giant gauge factor is attributed to the emergence of nonzero Berry curvature dipole. Upon increasing strain, Berry curvature dipole can generate net orbital magnetization, which would introduce additional magnetic scattering, decreasing the mobility and thus conductivity. Our work demonstrates the strain engineering of Berry curvature and thus the transport properties, making monolayer W…
Quantum materials, particularly Dirac materials with linearly dispersing bands, can be effectively tuned by strain-induced lattice distortions leading to a pseudo-magnetic field that strongly modulates their electronic properties. Here, we grow kagome magnet FeSn films, consisting of alternatingly stacked Sn$_2$ honeycomb (stanene) and Fe$_3$Sn kagome layers, on SrTiO$_3$(111) substrates by molecular beam epitaxy. Using scanning tunneling microscopy/spectroscopy, we show that the Sn honeycomb layer can be periodically deformed by epitaxial strain for film thickness below 10 nm, resulting in di…
We build a Cu-MoTe2-Cu device model and use first-principles density functional theory to study the transport properties of single-layer Td-MoTe2. We obtained the effect of strain on the energy band structure, transport properties, and photocurrent. The strain-induced photocurrent shows an anisotropy that reflects the modulation of the energy bands, including the Weyl point, by strain. The photocurrent can be suppressed to almost zero when the strain is applied along the vacuum direction. In contrast, the photocurrent can be significantly increased when the strain is applied along the transpor…
The coupling between strain gradients and polarization, known as flexoelectricity, offers a new mechanism to control the functionality of dielectric materials. However, for the effect to be practically attractive, dynamic control of the strain gradient with magnitudes far exceeding those achievable via mechanical deformation (~10 $m^{-1}$) is needed. Strain-engineered thin films exhibit extraordinary strain gradients of $10^5-10^6 m{-1}$ arising from structural relaxation within a short space range that greatly enhances the steady-state flexoelectric effect. Here we report a giant, optically i…
The realization of ordered strain fields in two-dimensional crystals is an intriguing perspective in many respects, including the instauration of novel transport regimes and the achievement of enhanced device performances. In this work, we demonstrate the possibility to subject micrometric regions of atomically-thin molybdenum disulphide (MoS2) to giant strains with the desired ordering. Mechanically-deformed MoS2 membranes can be obtained by proton-irradiation of bulk flakes, leading to the formation of monolayer domes containing pressurized hydrogen. By pre-patterning the flakes via depositi…
Young's modulus determines the mechanical loads required to elastically stretch a material, and also, the loads required to bend it, given that bending stretches one surface while compressing the opposite one. Flexoelectric materials have the additional property of becoming electrically polarized when bent. While numerous studies have characterized this flexoelectric coupling, its impact on the mechanical response, due to the energy cost of polarization upon bending, is largely unexplored. This intriguing contribution of strain gradient elasticity is expected to become visible at small length …
One of the most exciting properties of two dimensional materials is their sensitivity to external tuning of the electronic properties, for example via electric field or strain. Recently discovered analogues of phosphorene, group-IV monochalcogenides (MX with M = Ge, Sn and X = S, Se, Te), display several interesting phenomena intimately related to the in-plane strain, such as giant piezoelectricity and multiferroicity, which combine ferroelastic and ferroelectric properties. Here, using calculations from first principles, we reveal for the first time giant intrinsic spin Hall conductivities (S…
Ferromagnetic Ni2MnGa-based alloys play an important role in technological fields, such as smart actuators, magnetic refrigeration and robotics. The possibility of obtaining large non-contact deformation induced by an external perturbation is one of its key strengths for applications. However, the search for materials with low cost, practical fabrication procedures and large signal output under small perturbing fields still poses challenges. In the present study we demonstrate that by judicial choice of substitution on the Mn site, an abrupt magnetostructural transition from a paramagnetic aus…
The ultrathin nature and dangling bonds free surface of two-dimensional (2D) semiconductors allow for significant modifications of their band gap through strain engineering. Here, thin InSe photodetector devices are biaxially stretched, finding, a strong band gap tunability upon strain. The applied biaxial strain is controlled through the substrate expansion upon temperature increase and the effective strain transfer from the substrate to the thin InSe is confirmed by Raman spectroscopy. The band gap change upon biaxial strain is determined through photoluminescence measurements, finding a gau…
Dynamic second-order nonlinear susceptibilities, $χ^{(2)}(2ω,ω,ω)\equiv χ^{(2)}(ω)$, are calculated here within a fully first-principles scheme for monolayered molybdenum dichalcogenides, $2H$-MoX$_2$ (X=S,Se,Te). The absolute values of $χ^{(2)}(ω)$ across the three chalcogens critically depend on the band gap energies upon uniform strain, yielding the highest $χ^{(2)}(0)\sim$ 140 pm/V for MoTe$_2$ in the static limit. Under this uniform in-plane stress, $2H$-MoX$_2$ can undergo direct-to-indirect transition of band gaps, which in turn substantially affects $χ^{(2)}(ω)$. The tunability of $χ^{…
Phosphorene, an emerging elemental two-dimensional (2D) direct band gap semiconductor with fascinating structural and electronic properties distinctively different from other 2D materials such as graphene and MoS2, is promising for novel nanoelectronic and optoelectronic applications. Phonons, as one of the most important collective excitations, are at the heart for the device performance, as their interactions with electrons and photons govern the carrier mobility and light-emitting efficiency of the material. Here, through a detailed first-principles study, it is demonstrated that monolayer …
The shape recovery ability of shape-memory alloys vanishes below a critical size (~50nm), which prevents their practical applications at the nanoscale. In contrast, ferroic materials, even when scaled down to dimensions of a few nanometers, exhibit actuation strain through domain switching, though the generated strain is modest (~1%). Here, we develop free-standing twisted architectures of nanoscale ferroic oxides showing shape-memory effect with a giant recoverable strain (>10%). The twisted geometrical design amplifies the strain generated during ferroelectric domain switching, which cannot …
Multilayer MoS2 possesses highly anisotropic thermal conductivities along in-plane and cross-plane directions that could hamper heat dissipation in electronics. With about 9% cross-plane compressive strain created by hydrostatic pressure in a diamond anvil cell, we observed about 12 times increase in the cross-plane thermal conductivity of multilayer MoS2. Our experimental and theoretical studies reveal that this drastic change arises from the greatly strengthened interlayer interaction and heavily modified phonon dispersions along cross-plane direction, with negligible contribution from elect…
The exploration of electric field controlled magnetism has come under scrutiny for its intriguing magnetoelectric phenomenon as well as technological advances in spintronics. Herein, the tremendous effect of an epitaxial strain on voltage-controlled perpendicular magnetic anisotropy (VPMA) is demonstrated in a transition-metal/ferromagnet/MgO (TM/FM/MgO) heterostructure from first-principles electronic structure computation. By tuning the epitaxial strain in Ta/Fe/MgO as a model system of TM/FM/MgO, we find distinctly different behaviours of VPMA from V- to Λ-shape trends with a substantially …
The electron-hole symmetry in graphene monolayer, which is analogous to the inherent symmetric structure between electrons and positrons of the Universe, plays a crucial role in the chirality and chiral tunnelling of massless Dirac fermions. Here we demonstrate that both strain and charged-defect scattering could break this symmetry dramatically in graphene monolayer. In our experiment, the Fermi velocities of electrons and holes are measured directly through Landau level spectroscopy. In strained graphene with lattice deformation and curvature, the and are measured as 1.2 x 106 m/s and 1.02 x…
The bilayer iridate Sr$_3$Ir$_2$O$_7$ is a $c$-axis collinear antiferromagnet, held there by a giant interlayer pseudodipolar anisotropy, whereas single-layer Sr$_2$IrO$_4$ cants in the $ab$ plane. We show from first principles that biaxial compression of a few percent ($\varepsilon_c\approx-2.4\%$) flops the easy axis of Sr$_3$Ir$_2$O$_7$ into the plane. A magnetic model Hamiltonian built from Wannier functions with no fitted parameter---reproducing the giant magnon gap of the bulk, so far known only from fits to experiment---identifies the mechanism. Compression collapses the interlayer exch…
Concepts for memories based on the manipulation of giant magnetostrictive nanomagnets by stress pulses have garnered recent attention due to their potential for ultra-low energy operation in the high storage density limit. Here we discuss the feasibility of making such memories in light of the fact that the Gilbert damping of such materials is typically quite high. We report the results of numerical simulations for several classes of toggle precessional and non-toggle dissipative magnetoelastic switching modes. Material candidates for each of the several classes are analyzed and forms for the …
The impact of epitaxial strain on the structural, electronic, and thermoelectric properties of p-type transparent Sr-doped LaCrO3 thin films has been investigated. For this purpose, high-quality fully strained La0.75Sr0.25CrO3 (LSCO) epitaxial thin films were grown by molecular beam epitaxy on three different (pseudo)cubic (001)-oriented perovskite oxide substrates: LaAlO3, (LaAlO3)0.3(Sr2AlTaO6)0.7, and DyScO3. The lattice mismatch between the LSCO films and the substrates induces in-plane strain ranging from -2.06% (compressive) to +1.75% (tensile). The electric conductivity can be controlle…
We investigate the electrostrictive response across a ferroelectric phase transition from first-principles calculations and refute the prevailing view of constant electrostriction across the ferroelectric phase boundary. We take as a case study the epitaxial strain-induced transition from para- to feroelectricity of \ce{KTaO3}. We show that the magnitude of the electrostriction diverges with the permitivity at the transition, hence exhibiting giant responses through a calculation of both the M and Q electrostrictive tensors. We explain the origin of this giant electrostrictive response in \ce{…
Strain-coupled magnetoelectric (ME) phenomena in piezoelectric / ferromagnetic thin-film bilayers are a promising paradigm for sensors and information storage devices, where strain is utilized to manipulate the magnetization of the ferromagnetic film. In-plane magnetization rotation with an electric field across the film thickness has been challenging due to the virtual elimination of in-plane piezoelectric strain by substrate clamping, and to the requirement of anisotropic in-plane strain in two-terminal devices. We have overcome both of these limitations by fabricating lithographically patte…
Strain Tuning of Orbital-Driven Giant Magnetoresistance in van der Waals ferrimagnet Mn$_3$Si$_2$Te$_6$
Institute for Solid State Physics, The University of Tokyo（东京大学固体离子体研究所）；The University of Tokyo（东京大学）；Department of Physics and Astronomy, The University of Manchester（曼彻斯特大学物理与天文学系）；The University of Manchester（曼彻斯特大学）；Department of Physics, Institute of Science Tokyo（东京科学大学物理系）；Institute of Science Tokyo（东京科学大学）
Piezoelectrics interconvert mechanical energy and electric charge and are widely used in actuators and sensors. The best performing materials are ferroelectrics at a morphotropic phase boundary (MPB), where several phases can intimately coexist. Switching between these phases by electric field produces a large electromechanical response. In the ferroelectric BiFeO$_3$, strain can be used to create an MPB-like phase mixture and thus to generate large electric field dependent strains. However, this enhanced response occurs at localized, randomly positioned regions of the film, which potentially …
We reveal that strong flexoelectric effect of solids can be induced due to the signfi?cant charge migration along the strain gradient direction, which represents a new understanding of the origin of flexoelectricity. Beyond the linear response theory, we illustrate such charge migration that is driven by an electric field effect in bent silicon thinfilms. Due to such charge migration, the variation of atomic charge no longer represents a linear response to strain gradient and the resulting giant flexoelectric coeffcients being size dependent cannot be treated as a bulk property. The obtained f…
Despite of the tremendous efforts spent on the oxygen vacancy migration in determining the property optimization of oxygen-vacancy enrichment transition metal oxides, few has focused on their dynamic behaviors non-equilibrium states. In this work, we performed multi-timescale ultrafast X-ray diffraction measurements by using picosecond synchrotron X-ray pulses and femtosecond table-top X-ray pulses to monitor the structural dynamics in the oxygen-vacancy ordered SrCoO2.5 thin films. A giant photoinduced strain (Δc/c > 1%) was observed, whose distinct correlation with the pump photon energy ind…
The recent progress in the growth of large-area boron nitride epilayers opens up new possibilities for future applications. However, it remains largely unclear how weakly attached two-dimensional BN layers interact with their substrate and how their properties are influenced by defects. In this work, we investigate hBN layers grown by Metal Organic Vapor Phase Epitaxy (MOVPE) using Fourier-transform Infrared (FTIR) spectroscopy in the temperature range of 160-540 K. Our measurements reveal strong differences in the character of layer-substrate interaction for as-grown and delaminated epitaxial…
Despite important breakthroughs in the last decade, the calculation of temperature dependent properties of solids still remains a challenging task, especially in the vicinity of structural phase transitions. We show that the combination of machine-learning interatomic potentials with quantum self-consistent ab initio lattice dynamics allows to calculate efficiently the temperature dependence of dielectric properties of the quantum paraelectric perovskite KTaO$_3$, with a precision beyond what could be reasonably achieved using plain density functional theory. We first follow the strong anharmo…
Recent realizations of ultrathin freestanding perovskite oxides offer a unique platform to probe novel properties in two-dimensional oxides. Here, we observed a giant flexoelectric response in freestanding BiFeO3 and SrTiO3 in their bent state arising from strain gradients up to 4x10e7/m, suggesting a promising approach for realizing extremely large polarizations. Additionally, a substantial reversible change in thickness was discovered in bent freestanding BiFeO3, which implies an unusual bending-expansion/shrinkage and thickness-dependence Poisson's ratios in this ferroelectric membrane that…
