AI 中文总结
本研究通过原位大应变调控范德华磁体Mn$_3$Si$_2$Te$_6$的电阻，揭示其非常规巨磁阻源于应变可调的手性轨道电流畴，为自旋电子功能提供了新思路。
AI 中文摘要
磁输运的应变工程为揭示量子磁性材料中涌现的电子和畴现象提供了有力策略，同时为下一代机械可编程自旋电子技术提供了有前景的途径。范德华磁体在此背景下极具吸引力，因为其高结晶度和机械柔性可实现极大且精确可控的应变，从而获得传统固体中无法实现的应变诱导功能。本研究报道了对范德华磁体Mn$_3$Si$_2$Te$_6$的系统应变调控，该材料表现出非常规巨磁阻，其微观起源仍存在争议。我们展示了体单晶中电阻的原位大应变调制，且该效应可通过应变可调的手性轨道电流畴合理解释。此外，对包含单个手性畴的剥离薄片器件的测量揭示了受轨道磁矩影响的电子结构的直接应变控制，为非常规巨磁阻建立了统一的微观机制。这些结果表明应变是调控范德华磁体电子和磁态的极为有效的控制参数，并为基于轨道自由度实现自旋电子功能提供了概念框架。
英文摘要
Strain engineering of magnetotransport offers a powerful strategy for uncovering emergent electronic and domain phenomena in quantum magnetic materials, while providing a promising pathway toward next-generation mechanically programmable spintronic technologies. Van der Waals magnets are particularly attractive in this context because their high crystallinity and mechanical flexibility allow exceptionally large, precisely controllable strain, enabling access to strain-induced functionalities unattainable in conventional solids. Here, we report systematic strain control of the van der Waals magnet Mn$_3$Si$_2$Te$_6$, which exhibits an unconventional colossal magnetoresistance whose microscopic origin remains under debate. We demonstrate in situ large-strain modulation of the electrical resistance in bulk crystals and show that the effect can be consistently explained by strain-tunable chiral orbital-current domains. Furthermore, measurements on exfoliated flake devices containing a single chiral domain reveal direct strain control of the electronic structure affected by orbital magnetic moment, establishing a unified microscopic mechanism for the unconventional colossal magnetoresistance. These results identify strain as an exceptionally effective control parameter for tailoring electronic and magnetic states in van der Waals magnets and provide a conceptual framework for realizing spin-straintronic functionalities based on orbital degrees of freedom.
