arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 2001.01735cond-mat.str-elcond-mat.mes-hallcond-mat.mtrl-sci
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二维Mott材料的库仑工程

Coulomb Engineering of two-dimensional Mott materials

Erik G. C. P. van Loon, Malte Schüler, Daniel Springer, Giorgio Sangiovanni, Jan M. Tomczak, Tim O. Wehling

AI总结:

本文提出通过调控介电环境来工程化二维Mott材料中的库仑相互作用,利用多体计算展示Hubbard带位置的eV级变化及绝缘体-金属转变,并讨论实验实现条件。

摘要:

二维材料会受到其周围环境的强烈影响。介电环境会屏蔽并减弱二维材料中电子之间的库仑相互作用。由于在Mott材料中库仑相互作用是绝缘态的成因,调控介电屏蔽可以直接控制Mott性。我们的多体计算揭示了这种库仑工程的谱学指纹:我们展示了Hubbard带位置发生电子伏特量级的变化,并展示了一种由库仑工程驱动的绝缘体-金属转变。基于我们的原理验证计算,我们讨论了在实验上实现Mott材料库仑工程方案所需的(可行的)条件。

英文摘要:

Two-dimensional materials can be strongly influenced by their surroundings. A dielectric environment screens and reduces the Coulomb interaction between electrons in the two-dimensional material. Since in Mott materials the Coulomb interaction is responsible for the insulating state, manipulating the dielectric screening provides direct control over Mottness. Our many-body calculations reveal the spectroscopic fingerprints of such Coulomb engineering: we demonstrate eV-scale changes to the position of the Hubbard bands and show a Coulomb engineered insulator-to-metal transition. Based on our proof-of-principle calculations, we discuss the (feasible) conditions under which our scenario of Coulomb engineering of Mott materials can be realized experimentally.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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