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arXiv 1909.09727cond-mat.mtrl-sci
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高压下3.9nm纳米晶中位错的形核

Nucleation of Dislocations in 3.9 nm Nanocrystals at High Pressure

Abhinav Parakh, Sangryun Lee, K. Anika Harkins, Mehrdad T. Kiani, David Doan, Martin Kunz, Andrew Doran, Lindsey A. Hanson, Seunghwa Ryu, X. Wendy Gu

摘要:

随着电路接近单纳米长度尺度,重要的是预测金属在这些尺度上的稳定性。金属在更大尺度下的行为可以根据位错的行为来预测,但目前还不清楚位错是否可以形成并维持在单个纳米尺寸。在这里,我们报告在非静水压力下在金刚石对顶砧单元内形成的单个3.9 nm Au纳米晶体的位错。我们使用了X射线衍射,光学吸收光谱,和分子动力学模拟的组合来表征所形成的缺陷,这被发现是表面成核的部分位错。这些结果表明,位错仍然是活跃的,在单一的纳米长度尺度,并可以导致永久塑性。

英文摘要:

As circuitry approaches single nanometer length scales, it is important to predict the stability of metals at these scales. The behavior of metals at larger scales can be predicted based on the behavior of dislocations, but it is unclear if dislocations can form and be sustained at single nanometer dimensions. Here, we report the formation of dislocations within individual 3.9 nm Au nanocrystals under nonhydrostatic pressure in a diamond anvil cell. We used a combination of x-ray diffraction, optical absorbance spectroscopy, and molecular dynamics simulation to characterize the defects that are formed, which were found to be surface-nucleated partial dislocations. These results indicate that dislocations are still active at single nanometer length scales and can lead to permanent plasticity.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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