Electronic correlation determining correlated plasmons in Sb-doped Bi$_2$Se$_3$
P. K. Das, T. J. Whitcher, M. Yang, X. Chi, Y. P. Feng, W. Lin, J. S. Chen, I. Vobornik, J. Fujii, K. A. Kokh, O. E. Tereshchenko, C. Z. Diao, Jisoo Moon, Seong… 展开作者
P. K. Das, T. J. Whitcher, M. Yang, X. Chi, Y. P. Feng, W. Lin, J. S. Chen, I. Vobornik, J. Fujii, K. A. Kokh, O. E. Tereshchenko, C. Z. Diao, Jisoo Moon, Seongshik Oh, A. H. Castro-Neto, M. B. H Breese, A. T. S. Wee, A. Rusydi
电子关联被认为在关联电子系统中的绝缘体-金属转变、巨磁电阻和高温超导等奇异现象中起着重要作用。最近，它已被证明，电子关联也可能是负责非常规等离子体激元的形成。因此，使用角度相关的椭圆偏振光谱，角度分辨的光电子能谱和霍尔测量的组合都作为温度的函数的第一性原理计算支持，低损耗的高能量相关等离子体伴随着光谱重量转移，电子相关的指纹，在拓扑绝缘体（Bi $_{0.8}$ Sb $_{0.2}$）$_2$ Se $_3$的存在。冷却后，表面态的自由载流子密度降低，而体态的自由载流子密度增加，新发现的相关等离子体激元是解释这一现象的关键。我们的研究结果显示了电子关联在确定新的关联等离子体激元中的重要性，并为基于等离子体激元的拓扑绝缘器件的工程设计开辟了一条新的途径。
英文摘要：
Electronic correlation is believed to play an important role in exotic phenomena such as insulator-metal transition, colossal magneto resistance and high temperature superconductivity in correlated electron systems. Recently, it has been shown that electronic correlation may also be responsible for the formation of unconventional plasmons. Herewith, using a combination of angle-dependent spectroscopic ellipsometry, angle resolved photoemission spectroscopy and Hall measurements all as a function of temperature supported by first-principles calculations, the existence of low-loss high-energy correlated plasmons accompanied by spectral weight transfer, a fingerprint of electronic correlation, in topological insulator (Bi$_{0.8}$Sb$_{0.2}$)$_2$Se$_3$ is revealed. Upon cooling, the density of free charge carriers in the surface states decreases whereas those in the bulk states increase, and that the newly-discovered correlated plasmons are key to explaining this phenomenon. Our result shows the importance of electronic correlation in determining new correlated plasmons and opens a new path in engineering plasmonic-based topologically-insulating devices.
Dispersion models describing coupled systems in doped crystals. II. Infrared phonon excitations in GaAs single crystals and phonon-plasmon coupling in Zn-doped GaAs
Masaryk University（马萨里克大学）；Brno University of Technology（布尔诺理工大学）；New Mexico State University（新墨西哥州立大学）；Institute of Physics, Academy of Sciences of the Czech Republic（捷克科学院物理研究所）
Strongly-coupled hybrid lattice-plasmons in layered cuprates
University of California, Berkeley（加州大学伯克利分校）；Lawrence Berkeley National Laboratory（劳伦斯伯克利国家实验室）；Diamond Light Source（钻石光源）；Seoul National University（首尔国立大学）；National Synchrotron Radiation Laboratory and School of Nuclear Science and Technology, University of Science and Technology of China（中国科学技术大学核科学与技术学院及国家同步辐射实验室）；Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory（斯坦福材料能源科学研究所，SLAC国家加速器实验室）；Geballe Laboratory for Advanced Materials, Stanford University（斯坦福大学先进材料盖巴尔实验室）
