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arXiv 1609.02843cond-mat.mtrl-sci
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半导体中的电子-等离子体激元耦合理论

Theory of electron-plasmon coupling in semiconductors

Fabio Caruso, Feliciano Giustino

摘要:

操纵等离子体激元的能力正在推动电子学、光学、传感、能源和医学的新发展。尽管在这个方向上的实验研究的巨大势头,一个预测的量子力学框架描述在真实材料中的电子等离子体相互作用仍然是失踪。在这里,从多体格林函数的方法,我们开发了一个从头计算方法研究固体中的电子等离子体耦合。作为这种方法的第一个演示,我们表明,电子等离子体激元散射是掺杂硅中的热载流子的冷却的主要机制,这是关键,以解释在高掺杂测量的电子迁移率,它导致量子零点重整化的带隙与实验一致。

英文摘要:

The ability to manipulate plasmons is driving new developments in electronics, optics, sensing, energy, and medicine. Despite the massive momentum of experimental research in this direction, a predictive quantum-mechanical framework for describing electron-plasmon interactions in real materials is still missing. Here, starting from a many-body Green's function approach, we develop an ab initio approach for investigating electron-plasmon coupling in solids. As a first demonstration of this methodology, we show that electron-plasmon scattering is the primary mechanism for the cooling of hot carriers in doped silicon, it is key to explain measured electron mobilities at high doping, and it leads to a quantum zero-point renormalization of the band gap in agreement with experiment.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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