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arXiv 2106.13619cond-mat.mtrl-sciphysics.optics
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混合等离子体-半导体纳米结构中光发射的横向磁路由:在室温下工作

Transverse magnetic routing of light emission in hybrid plasmonic-semiconductor nanostructures: Towards operation at room temperature

L. Klompmaker, A. N. Poddubny, E. Yalcin, L. V. Litvin, R. Jede, G. Karczewski, S. Chusnutdinow, T. Wojtowicz, D. R. Yakovlev, M. Bayer, I. A. Akimov

摘要:

我们从实验和理论上研究了从混合等离子体-半导体量子阱结构的光发射的横向磁路由的温度依赖性,其中从量子阱的激子发射被路由到沿附近的半导体-金属界面传播的表面等离子体极化激元。在II-VI族和III-V族直接带半导体中,路由的幅度由激子光学跃迁的圆偏振决定,该圆偏振由磁场引起。对于包括(Cd,Mn)Te/(Cd,Mg)Te稀磁半导体量子阱的结构,我们观察到在20 K的低温和485 mT的磁场下高达15%的发射的强方向性,这是由于通过与Mn $^{2+}$离子的强交换相互作用介导的空穴的巨大塞曼分裂。随着温度向室温的升高,磁化率降低,方向性在T = 45 K时强烈降低到4%。我们还提出了一种替代设计的基础上的非磁性(In,Ga)As/(In,Al)As量子阱结构,适用于更高的温度。根据我们的计算,这种结构可以显示出发射方向性高达5%的温度低于200 K和中等磁场的1 T。

英文摘要:

We study experimentally and theoretically the temperature dependence of transverse magnetic routing of light emission from hybrid plasmonic-semiconductor quantum well structures where the exciton emission from the quantum well is routed into surface plasmon polaritons propagating along a nearby semiconductor-metal interface. In II-VI and III-V direct band semiconductors the magnitude of routing is governed by the circular polarization of exciton optical transitions, that is induced by a magnetic field. For structures comprising a (Cd,Mn)Te/(Cd,Mg)Te diluted magnetic semiconductor quantum well we observe a strong directionality of the emission up to 15% at low temperature of 20 K and magnetic field of 485 mT due to giant Zeeman splitting of holes mediated via the strong exchange interaction with Mn$^{2+}$ ions. For increasing temperatures towards room-temperature the magnetic susceptibility decreases and the directionality strongly decreases to 4% at T = 45 K. We also propose an alternative design based on a non-magnetic (In,Ga)As/(In,Al)As quantum well structure, suitable for higher temperatures. According to our calculations, such structure can demonstrate emission directionality up to 5% for temperatures below 200 K and moderate magnetic fields of 1 T.

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